A kind of preparation method of anti-radiation reinforced bipolar transistor

Abstract

The invention discloses a reinforced bipolar transistor resistant to radiation and a method for preparing the reinforced bipolar transistor resistant to radiation and belongs to the field of electronic techniques. The reinforced bipolar transistor resistant to radiation and the method for preparing the reinforced bipolar transistor resistant to radiation solve the problem that an existing bipolar transistor is poor in radiation resistance. According to the reinforced bipolar transistor resistant to radiation, an emitter region is of an eudipleural square comb structure with the diagonal line of a base region as the symmetric line, n pairs of rectangular tooth structures symmetrically extend outwards from the two sides of the symmetric line, and the included angle between every pair of rectangular tooth structures is 90 degrees. The method for preparing the reinforced bipolar transistor resistant to radiation comprises the steps that when doping elements diffuse to form the base region, and the diffusion junction depth of the base region is between 1 micron and 2.5 microns; a layer of boron is diffused on the surface of the base region; when the doping elements diffuse to form the emitter region, the diffusion junction depth of the emitter region is between 0.5 micron and 2 microns; during oxidation, it is guaranteed that the thickness of dry oxygen is between 1 nm and 10 nm and the thickness of wet oxygen is between 200 nm and 1 micron. The reinforced bipolar transistor resistant to radiation and the method for preparing the reinforced bipolar transistor resistant to radiation are suitable for application and production of commercial bipolar transistors resistant to radiation.

Description

technical field [0001] The invention belongs to the field of electronic technology, in particular to an anti-radiation reinforced bipolar transistor. Background technique [0002] Electrons and protons in the space radiation environment have a strong impact on the performance of electronic devices used in spacecraft, which will cause ionizing radiation effects, displacement radiation effects and single event effects, etc., leading to abnormalities or failures of electronic devices, and eventually lead to disasters in spacecraft sex accident. Therefore, improving the anti-irradiation ability of bipolar devices has very important engineering practical significance for optimizing the material selection and design of spacecraft and improving the reliability of spacecraft in orbit. [0003] The emitter perimeter / area ratio of a bipolar device is an important factor affecting its radiation resistance. After the irradiation experiment, the base current I of the bipolar device B ...

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Problems solved by technology

[0004] The present invention aims to solve the problem of low radiation resistance of existing bipolar transistors, and now provides a preparation method of radiation-resistant reinforced bipolar transistors

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