Bismuth gallate ferroelectric film material and preparation method thereof

Abstract

The invention discloses a bismuth gallate ferroelectric film material and a preparation method thereof. The film material grows on a substrate material, the molecular formula of bismuth gallate is BiGaO3, and a substrate is one of Si, LaNiO3 / Si, Pt / TiO2 / SiO2 / Si and Pt / Ti / SiO2 / Si; the space group of the film material is Pcca, and the lattice constants are as follows: a=5.626 angstrom, b=5.081 angstrom, and c=10.339 angstrom; the preferred orientation of the BiGaO3 film material growing on the selected substrate is (112). The preparation method comprises the following steps: weighing lanthanum nitrate and lanthanum acetate, wherein a molar ratio of bismuth to gallium is 1.1:1, and fully stirring by taking acetic acid at a solvent at the temperature of 60 DEG C to obtain a colorless clear solution; placing the obtained solution on the substrate, spinning to form a film, annealing in a rapid annealing furnace, and repeating the process for multiple times to obtain a bismuth gallate ferroelectric film material with a required thickness. The material has a wide application prospect in the fields of photovoltaic solar cells, information storage and the like.

Description

technical field [0001] The invention relates to a bismuth-based oxide film material, specifically a BiGaO 3 Compositional Oxide Ferroelectric Thin Film Materials. Background technique [0002] Recently, bismuth-based ferroelectric materials such as bismuth ferrite (BiFeO 3 ), bismuth titanate (Bi 4 Ti 3 o 12 ), bismuth aluminate (BiAlO 3 ) and other ferroelectric oxides with perovskite or pseudoperovskite structures have attracted much attention due to their low leakage, strong fatigue resistance, high dielectric constant, and environmental friendliness. In recent years, bismuth ferrite (BiFeO 3 ) and bismuth titanate (Bi 4 Ti 3 o 12 ) The design, preparation, physical and chemical properties and application in production and life have been generally recognized and understood. In 2005, Baettig et al. theoretically predicted bismuth gallate (BiGaO 3 ) also have excellent ferroelectric properties, however, bismuth gallate (BiGaO 3 ) material preparation technolo...

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Problems solved by technology

In recent years, bismuth ferrite (BiFeO 3 ) and bismuth titanate (Bi 4 Ti 3 o 12 ) The design, preparation, physical and chemical properties and application in production and life have been generally recognized and understood. In 2005, Baettig et al. theoretically predicted bismuth gallate (BiGaO 3 ) also have excellent ferroelectric properties, however, bismuth gallate (BiGaO 3 ) material preparation technology is still extremely lacking, only reported that bismuth gallate (BiGaO 3 ), and such high temperature and high pressure production conditions are obviously not suitable for the production of devices and integrated circuits in the microelectronics industry, and its bulk materials cannot be applied to increasingly miniaturized and integrated The field of microelectronics, but the preparation process of bismuth gallate thin film suitable for the field of microelectronics has not yet been reported

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