Bismuth gallate ferroelectric film material and preparation method thereof

A technology for ferroelectric thin films and thin film materials, applied in chemical instruments and methods, bismuth compounds, inorganic chemistry, etc., can solve the problems that bulk materials cannot be used in the field of microelectronics, lack of preparation technology, unsuitable for devices, integrated circuits, etc. Achieve the effect of low cost, good repeatability and simple equipment

Inactive Publication Date: 2014-06-25
EAST CHINA NORMAL UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

In recent years, bismuth ferrite (BiFeO 3 ) and bismuth titanate (Bi 4 Ti 3 o 12 ) The design, preparation, physical and chemical properties and application in production and life have been generally recognized and understood. In 2005, Baettig et al. theoretically predicted bismuth gallate (BiGaO 3 ) also have excellent ferroelectric properties, however, bismuth gallate (BiGaO 3 ) material preparation technology is still extremely lacking, only repor

Method used

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  • Bismuth gallate ferroelectric film material and preparation method thereof
  • Bismuth gallate ferroelectric film material and preparation method thereof
  • Bismuth gallate ferroelectric film material and preparation method thereof

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Embodiment

[0022] a. Preparation of bismuth gallate solution

[0023] Weigh 2.6948g of bismuth nitrate pentahydrate and 1.8205g of gallium nitrate hexahydrate, pour them into a 100ml flask, then add 50ml of acetic acid (analytical pure), then stir at a temperature of 60°C to dissolve them completely to obtain a concentration of 0.1M colorless transparent solution.

[0024] b. Preparation of bismuth gallate thin film material

[0025] (1) Drop the prepared solution onto the lanthanum nickelate substrate rotating at high speed, the substrate speed is 4000 rpm, and rotate for 25 seconds to obtain the raw material film;

[0026] (2) Segmented annealing: heat preservation at 200°C for 200 seconds, then pyrolysis at 400°C for 240 seconds, and finally high-temperature annealing at 700°C for 300 seconds;

[0027] (3) Repeat the above process 6 times to prepare a bismuth gallate thin film material with a thickness of 110 nm.

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Abstract

The invention discloses a bismuth gallate ferroelectric film material and a preparation method thereof. The film material grows on a substrate material, the molecular formula of bismuth gallate is BiGaO3, and a substrate is one of Si, LaNiO3/Si, Pt/TiO2/SiO2/Si and Pt/Ti/SiO2/Si; the space group of the film material is Pcca, and the lattice constants are as follows: a=5.626 angstrom, b=5.081 angstrom, and c=10.339 angstrom; the preferred orientation of the BiGaO3 film material growing on the selected substrate is (112). The preparation method comprises the following steps: weighing lanthanum nitrate and lanthanum acetate, wherein a molar ratio of bismuth to gallium is 1.1:1, and fully stirring by taking acetic acid at a solvent at the temperature of 60 DEG C to obtain a colorless clear solution; placing the obtained solution on the substrate, spinning to form a film, annealing in a rapid annealing furnace, and repeating the process for multiple times to obtain a bismuth gallate ferroelectric film material with a required thickness. The material has a wide application prospect in the fields of photovoltaic solar cells, information storage and the like.

Description

technical field [0001] The invention relates to a bismuth-based oxide film material, specifically a BiGaO 3 Compositional Oxide Ferroelectric Thin Film Materials. Background technique [0002] Recently, bismuth-based ferroelectric materials such as bismuth ferrite (BiFeO 3 ), bismuth titanate (Bi 4 Ti 3 o 12 ), bismuth aluminate (BiAlO 3 ) and other ferroelectric oxides with perovskite or pseudoperovskite structures have attracted much attention due to their low leakage, strong fatigue resistance, high dielectric constant, and environmental friendliness. In recent years, bismuth ferrite (BiFeO 3 ) and bismuth titanate (Bi 4 Ti 3 o 12 ) The design, preparation, physical and chemical properties and application in production and life have been generally recognized and understood. In 2005, Baettig et al. theoretically predicted bismuth gallate (BiGaO 3 ) also have excellent ferroelectric properties, however, bismuth gallate (BiGaO 3 ) material preparation technolo...

Claims

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Application Information

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IPC IPC(8): C01G29/00
Inventor 张金中沈育德李亚巍胡志高孟祥建褚君浩
Owner EAST CHINA NORMAL UNIV
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