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Fabrication of Ordered Germanium Nano-Lattices by Transfer Printing Inverted Template Method

A nano and lattice technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems such as the inability to deposit templates, and achieve the effect of simple process and uniform distribution

Inactive Publication Date: 2016-08-03
YUNNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If grown directly on the template, there will be an ordered lattice that cannot be deposited into the bottom of the template

Method used

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  • Fabrication of Ordered Germanium Nano-Lattices by Transfer Printing Inverted Template Method
  • Fabrication of Ordered Germanium Nano-Lattices by Transfer Printing Inverted Template Method
  • Fabrication of Ordered Germanium Nano-Lattices by Transfer Printing Inverted Template Method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] In the process of preparing porous alumina template by two-step anodic oxidation, the polishing solution (HClO 4 and C 2 h 5 OH mixture), the cleaned aluminum sheet was electrochemically polished at 0°C for 3 minutes at a voltage of 30V. In the first oxidation process, the electrolyte is 0.3mol L -1 h 2 C 2 o 4 solution. The constant DC voltage is 40V, the temperature during the oxidation process is constant at 5°C, and the oxidation time is 5h. The obtained porous alumina membrane was placed at 60 °C under 1.8 wt% H 2 CrO 4 and 6wt%H 3 PO 4 Corroded in the mixed solution for 1h to remove the oxide film. In the second step of oxidation, the temperature is kept constant at 15°C, other conditions are completely the same as those in the first step, and the oxidation time is 0.5h. Afterwards at room temperature, a volume ratio of 0.25 of HCl and saturated Cu 2 SO 4 In the mixed solution, suspend the mixed solution on a self-made strainer, and remove the unoxid...

Embodiment 2

[0046] Embodiment 2: Different from Example 1, the deposition thickness in the preparation process of the nano-lattice is 1nm, and the density of the obtained germanium nano-lattice is 0.5×10 10 cm -2 , and the average aspect ratio of the resulting points is 0.2.

Embodiment 3

[0047] Embodiment 3: Different from Embodiment 1, in the preparation process of germanium nano lattices, a single-layer silicon buffer layer is grown on the surface of the substrate, the growth temperature is 600° C., and the annealing time is 20 mins.

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Abstract

The invention relates to a method for preparing a semiconductor low-dimension structure film and in particular relates to a method for preparing an ordered high-density germanium nanometer dot matrix by using a sputtering technology by utilizing an inverted porous alumina template and a transfer ordered dot matrix technology. The method comprises the following steps: preparing a porous alumina blind hole template by adopting a classic two-step anodic oxidation method; by utilizing the sputtering technology, taking high-purity argon as working gas in a work room kept in a high-vacuum environment, wherein the sputtering pressure of the work room is 0.5-2Pa, and the growth temperature is 600-800 DEG C; growing a silicon buffer layer of which the thickness is less than 500nm after the film is transplanted to a silicon substrate material for finishing transfer of an ordered structure under the condition that the sputtering power is 50-100W; and growing the germanium nanometer dot matrix on the silicon buffer layer in ordered structure distribution. The preparation method has the advantages of low production cost and high controllability, and the prepared germanium nanometer dot matrix has the characteristics of high density, high ordering property and the like.

Description

technical field [0001] The present invention relates to the preparation method of semiconductor low-dimensional structure thin film material, especially the technology of using porous alumina template to prepare nanomaterials. Based on the porous alumina template prepared by two-step anodic oxidation, the inverted template is adsorbed on the substrate, and on the back of the inverted template, A method for preparing high-density, ordered germanium nano lattices with a radius of <100nm by transferring the ordered structure of templates through materials. Background technique [0002] In the 1990s, researchers began to study the preparation of nanometer (1-100nm) structured materials and devices using porous alumina templates. Different from the "top-down" (Top-down) processing method of silicon-based microelectronics, the preparation of nanostructured materials using porous alumina templates is a "bottom-up" (Bottom-up) preparation method. Compared with the microelectroni...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/46C23C14/02C25D11/04B82Y40/00B82Y30/00
Inventor 靳映霞杨宇李亮张鑫鑫
Owner YUNNAN UNIV