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A kind of multi-component high-entropy alloy film and its preparation method

An alloy thin film, multi-element high-entropy technology, which is applied in metal material coating technology, ion implantation plating, coating, etc., can solve the problem that it is difficult to obtain single-phase solid solution high-entropy alloys, which hinders the wide application and preparation process of high-entropy alloys Complexity and other issues, to achieve the effect of stable sputtering rate, promotion of formation, and simple and easy operation process

Active Publication Date: 2015-11-11
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the method of preparing high-entropy alloys is mainly the arc melting method. Due to the limitation of cooling rate, it is difficult to obtain single-phase solid solution high-entropy alloys with uniform composition.
At the same time, this method requires high equipment, complicated preparation process, and high material cost, which hinders the wide application of high-entropy alloys.

Method used

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  • A kind of multi-component high-entropy alloy film and its preparation method
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  • A kind of multi-component high-entropy alloy film and its preparation method

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preparation example Construction

[0032] The preparation method of a kind of multivariate high-entropy alloy film of the present invention is as follows:

[0033] 1) First, ultrasonically clean the silicon wafer substrate polished on one side in acetone, and then conduct ultrasonic cleaning with alcohol and deionized water in sequence;

[0034] 2) Then put the washed silicon substrate on the filter paper to dry, with the polished side facing up;

[0035] 3) Put the dried silicon wafer substrate and the high-entropy alloy bulk target into the sample stage and the evaporation source position in the vacuum chamber of the DC magnetron sputtering equipment, respectively;

[0036] 4) Close the vacuum chamber of the DC magnetron sputtering equipment, and evacuate the air pressure to less than 4×10 -4 Pa, rush into the argon with a volume percentage greater than or equal to 98% as the working gas;

[0037] 5) Under the working pressure of 0.3-1Pa, while the valve of the sample stage and the valve of the evaporation ...

Embodiment 1

[0048] This embodiment adopts the method of DC magnetron sputtering mentioned in the present invention, has successfully prepared NiCrCoCuFe (the molar ratio of each element is Ni:Cr:Co:Cu:Fe=1:1:1:1:1 ) five-element high-entropy alloy thin film material. The thickness of the high-entropy alloy thin film material is uniform, and only a simple FCC solid solution phase is found in the thin film material, and the existence of the second phase is not found.

[0049] The preparation method of this high entropy alloy film material, its steps are as follows:

[0050]1) First, put the single-side polished silicon wafer substrate in acetone for 10 minutes for ultrasonic cleaning with an ultrasonic power of 80w, and then perform ultrasonic cleaning with alcohol and deionized water in sequence. The cleaning time is 10 minutes, and the ultrasonic power is 80w;

[0051] 2) Then place the washed silicon wafer substrate on filter paper to dry, with the polished side facing up, and blow dry ...

Embodiment 2

[0058] This embodiment adopts the method of DC magnetron sputtering mentioned in the present invention, has successfully prepared NiCrCoCuFe (the molar ratio of each element is Ni:Cr:Co:Cu:Fe=1:1:1:1:1 ) five-element high-entropy alloy thin film material. The thickness of the high-entropy alloy thin film material is uniform, and only a simple FCC solid solution phase is found in the thin film material, and the existence of the second phase is not found.

[0059] The preparation method of this high-entropy alloy thin film material, its steps are as follows:

[0060] 1) First, put the single-side polished silicon wafer substrate in acetone for 15 minutes for ultrasonic cleaning, with an ultrasonic power of 90w, and then perform ultrasonic cleaning with alcohol and deionized water in sequence. The cleaning time is 15 minutes, and the ultrasonic power is 90w;

[0061] 2) Then place the washed silicon wafer substrate on filter paper to dry, with the polished side facing up, and bl...

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Abstract

The invention discloses a multi-element high-entropy alloy film and a preparation method thereof. The multi-element high-entropy alloy film is a NiCrCoCuFe five-element high-entropy alloy film or a NiCrCoCuFeAl4.5 six-element high-entropy alloy film. The preparation method comprises the steps of ultrasonically washing a silicon wafer substrate with one polished surface through acetone, alcohol and de-ionized water in sequence; upwards air-drying the polished surface; putting the silicon wafer substrate and a high-entropy alloy block body target material onto a sample table and an evaporation source in a vacuum chamber of direct-current magnetron sputtering equipment respectively; vacuumizing the air pressure and filling argon gas; switching off valves of the sample table and the evaporation source for pre-sputtering; rotating the sample table, switching on the valves for sputtering, and taking out to obtain the multi-element high-entropy alloy film. According to the method, the sputtering rate is stable, so that the high-entropy alloy film material with uniform thickness can be obtained; the cooling rate is high, so that the formation of intermetallic compounds can be inhibited, and the formation of a single solid solution phase can be facilitated; the operation process is simple and feasible, and the application range of the high-entropy alloy material is extended.

Description

technical field [0001] The invention relates to an alloy thin film and a preparation method thereof, in particular to a multi-element high-entropy alloy thin film and a preparation method thereof. Background technique [0002] The traditional metal alloy system design idea is to use one or two elements as the basic components, and add a small amount of secondary components to obtain excellent performance to meet the needs of people's daily life and industrial production processes. For example, steel materials with iron as the main element, copper alloy materials with copper element as the main element, and high alloy materials with zirconium as the main element. Based on the understanding of physical metallurgy and binary and ternary phase diagrams, it is believed that when the number of components in the alloy system increases, the system tends to form intermetallic compounds with complex structures, which increases our research on the structure, structure, and structure of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/16C22C30/02
Inventor 蒋建中吴振福王晓东曹庆平葛恺张东武
Owner ZHEJIANG UNIV