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A device for preparing diamond film and method for preparing diamond film using the device

A diamond film and non-metallic technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of diamond waste, different density distribution of active groups, and difficulty in diamond film polishing and processing, and achieve change Density distribution, effect of improving deposition uniformity

Active Publication Date: 2016-07-06
SHANGHAI ZHENGSHI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the strongest microwave energy above the spin-rotating substrate stage in the middle area of ​​the plasma reaction chamber, the energy density distribution in the plasma ball is different, and the density in the middle area of ​​the plasma is higher than that in the edge area, resulting in the density distribution of active groups in the plasma ball. Different, the temperature of the plasma ball contacting the surface of the substrate will also have a difference in height, so that the large-area diamond film grown out has poor thickness uniformity, thick in the middle and thin at the edge.
The thickness difference between the middle area and the edge area of ​​​​the diamond film is generally about 15-20%, which makes it difficult for the polishing process of the diamond film and is a great waste of diamond

Method used

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  • A device for preparing diamond film and method for preparing diamond film using the device
  • A device for preparing diamond film and method for preparing diamond film using the device
  • A device for preparing diamond film and method for preparing diamond film using the device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Surface carbonization treatment of high-temperature-resistant metal rings: select tantalum wires with a diameter of 1.0mm to make high-temperature-resistant metal rings with a diameter of 10mm, and place the tantalum wires in the plasma reaction chamber for surface carbonization treatment {microwave power 800W, working pressure 8.8kPa , methane flow 10sccm (standard cubic centimeter per minute), hydrogen flow 200sccm, time 15min}. Place the high-temperature-resistant metal ring after surface carbonization treatment horizontally at a vertical height of 5 mm from the spin-rotating substrate table. The schematic diagram of its installation position is as follows: figure 1 shown. An alumina support 6 is set up around the self-rotating substrate table 4, and the high temperature resistant metal ring 2 is fixedly connected to the alumina support 6 through a tungsten wire 5.

[0031] The diamond film was deposited on a P-type (100) single crystal silicon wafer with a diamete...

Embodiment 2

[0038] Surface carbonization treatment of high-temperature-resistant metal rings: tantalum wires with a diameter of 1.0 mm were selected to manufacture high-temperature-resistant metal rings with a diameter of 15 mm, and the surface carbonization treatment was carried out on the tantalum wires by the same method as in Example 1. Place the high-temperature-resistant metal ring after surface carbonization treatment horizontally at a vertical height of 7mm from the rotating substrate table.

[0039] The diamond film was deposited on a P-type (100) single crystal silicon wafer with a diameter of 20 mm and a thickness of 1 mm as a substrate. The surface of the substrate was degreased using the same method as in Example 1.

[0040] The diamond film was prepared using the following steps:

[0041] (1) Put the above-mentioned substrate degreased on the surface on the spin-rotating substrate stage in the plasma reaction chamber, and draw a background vacuum to the plasma reaction cham...

Embodiment 3

[0046] Surface carbonization treatment of high-temperature-resistant metal ring: Thin tantalum wire was selected to manufacture a high-temperature-resistant metal ring with a diameter of 20 mm, and the surface carbonization treatment was carried out on the tantalum wire by the same method as in Example 1. Place the high-temperature-resistant metal ring after surface carbonization treatment horizontally at a vertical height of 9 mm from the spin-rotating substrate table.

[0047] The diamond film was deposited on a P-type (100) single crystal silicon wafer with a diameter of 20 mm and a thickness of 1 mm as a substrate. The surface of the substrate was degreased using the same method as in Example 1.

[0048] The diamond film was prepared using the following steps:

[0049] (1) Put the above-mentioned substrate degreased on the surface on the spin-rotating substrate stage in the plasma reaction chamber, and draw a background vacuum to the plasma reaction chamber for 10 -2 Pa,...

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Abstract

The invention provides a preparation apparatus for a diamond film. The apparatus employs a microwave plasma chemical vapor deposition device and comprises a microwave system, a vacuum system, a gas supply system and a plasma reaction chamber, wherein an autogyration substrate table is arranged in the plasma reaction chamber, microwaves generated by the microwave system during working enter into the plasma reaction chamber and excite gas supplied by the gas supply system above the autogyration substrate table to generate a plasma ball, and a refractory metal circular ring is arranged above the autogyration substrate table and located in the lower half part of the plasma ball.

Description

technical field [0001] The invention belongs to the technical field of vacuum microelectronics, and in particular relates to a device for preparing a diamond film and a method for preparing a diamond film using the device. Background technique [0002] Diamond has extremely high hardness, and has excellent properties such as extremely high thermal conductivity, low thermal expansion coefficient, and high chemical inertness at room temperature. It can be used to make cutting tools and wear-resistant parts, and is widely used in the field of mechanical processing. In addition, it is also an ideal material for making surface pressure sensors, radiation-resistant semiconductor devices, high-power semiconductor lasers, and high-density anti-corrosion and wear-resistant infrared optical windows. However, natural diamonds are scarce, expensive and difficult to process, which restricts the widespread use of diamonds. The diamond synthesized by the high temperature and high pressure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/513
Inventor 满卫东汪建华游志恒涂昕张玮林晓棋阳硕
Owner SHANGHAI ZHENGSHI TECH CO LTD
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