Method for manufacturing diamond device

A diamond and device technology, applied in the field of semiconductor devices, can solve the problems of increased gate-source and gate-drain resistance, decreased transistor frequency performance, etc., and achieve the effects of reducing ohmic contact resistance, improving performance and simple preparation method

Active Publication Date: 2014-07-09
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The gate-source and gate-drain resistance increases, and the frequency performance of the transistor decreases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing diamond device
  • Method for manufacturing diamond device
  • Method for manufacturing diamond device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] In the first step, the active area on the surface of the diamond semiconductor material with a p-type conductive channel is covered with photoresist;

[0030] The second step is to use the photoresist as a mask to etch the diamond conductive channel outside the active area with oxygen plasma for 10 minutes to remove the conductive channel;

[0031] The third step is to cover the photoresist outside the source and drain positions;

[0032] The fourth step is to transfer and cover the double-layer graphene grown on the Ni substrate by CVD method on the diamond surface;

[0033] The fifth step is to deposit ohmic contact metal Ti / Au 10 nm / 200nm on the graphene;

[0034] The sixth step is peeling off to form source and drain;

[0035] In the seventh step, electron beam lithography prepares a T-shaped grid with a grid length of 100 nm, evaporates 200 nm of Al grid metal, and peels off to form a diamond device.

Embodiment 2

[0037] In the first step, the active area on the surface of the diamond semiconductor material with an n-type conductive channel is covered with photoresist;

[0038] The second step is to use the photoresist as a mask to etch the diamond conductive channel outside the active area with oxygen plasma for 10 minutes to remove the conductive channel;

[0039] The third step is to cover the photoresist outside the source and drain positions;

[0040] The fourth step is to transfer and cover the double-layer graphene grown on the Ni substrate by CVD method on the diamond surface;

[0041] The fifth step is to deposit ohmic contact metal Ti / Au 10 nm / 200nm on the graphene;

[0042] The sixth step is peeling off to form source and drain;

[0043] In the seventh step, electron beam lithography prepares a T-shaped grid with a grid length of 100 nm, evaporates 200 nm of Al grid metal, and peels off to form a diamond device.

Embodiment 3

[0045] In the first step, the active area on the surface of the diamond semiconductor material with a p-type conductive channel is covered with photoresist;

[0046] The second step is to use the photoresist as a mask to etch the diamond conductive channel outside the active area with oxygen plasma for 10 minutes to remove the conductive channel;

[0047] The third step is to cover the photoresist outside the source and drain positions;

[0048] The fourth step is to transfer and cover the graphene grown on the Cu substrate by CVD method on the diamond surface;

[0049] The fifth step is to deposit ohmic contact metal Au 200nm on the graphene;

[0050] The sixth step is peeling off to form source and drain;

[0051] In the seventh step, electron beam lithography prepares a T-shaped grid with a grid length of 100 nm, evaporates 200 nm of Al grid metal, and peels off to form a diamond device.

[0052] In the present invention, a graphene layer is inserted between the diamond ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for manufacturing a diamond device, and relates to the technical field of semiconductor devices. The method includes the following steps: (1) an active area on a diamond surface layer with conducting channels is covered with photoresist; (2) the conducting channels in the positions, outside the active area, of the diamond are removed, and the photoresist is removed; (3) the positions outside the source position and the drain position are covered with the photoresist; (4) graphene is transferred to cover the surface of the diamond; (5) ohmic contact metal is deposited on the grapheme; (6) stripping is carried out to form a source and a drain; (7) a grid is manufactured. The manufacturing method is simple, a graphene layer is arranged between the diamond channels and source and drain metal, the graphene can be in good ohmic contact with the diamond and in good ohmic contact with the source and drain metal, the ohmic contact resistance of the diamond device can be greatly reduced, and the performance of the diamond device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices. Background technique [0002] Devices based on single crystal, polycrystalline and nanocrystalline diamond are collectively referred to as diamond-based devices, such as diamond MESFET, MISFET, JFET, etc. Diamond-based devices have the advantages of high operating temperature, strong breakdown field, high cut-off frequency, and high power density, and are the first choice for the future microwave high-power field. The gate-to-source and gate-to-drain resistance increases, and the frequency performance of the transistor decreases. Large ohmic contact resistance is the main source of parasitic resistance of diamond devices, so only by reducing the ohmic contact resistance can the performance of diamond devices be improved. Contents of the invention [0003] The technical problem to be solved in the present invention is to provide a preparation method of a diamond device. The prepa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/335
CPCH01L29/45H01L29/66409
Inventor 蔚翠冯志红李佳何泽召王晶晶刘庆彬
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap