Preparation method of copper-ferrum-tin-selenium thin film

A thin film, tin-selenium technology, applied in the field of solar photovoltaic materials, can solve the problems of difficult control of element ratio, large surface roughness, poor crystallization of thin film, etc., and achieve the effect of simple and convenient method, high quality and easy control of thin film components

Inactive Publication Date: 2014-07-23
EAST CHINA NORMAL UNIV
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  • Abstract
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Problems solved by technology

At present, the CFTSe film is mainly prepared by the sol-gel method in the laboratory, but the crystallization of the film is poor, the surface roughness is large, and the ratio of each element is difficult to control

Method used

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  • Preparation method of copper-ferrum-tin-selenium thin film
  • Preparation method of copper-ferrum-tin-selenium thin film
  • Preparation method of copper-ferrum-tin-selenium thin film

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Embodiment

[0028] 1. Clean the glass substrate: Use acetone, ethanol and deionized water to perform ultrasonic cleaning in sequence, and store it in deionized water after cleaning.

[0029] 2. Using the magnetron sputtering method, the background vacuum is 5×10 through the molecular pump. -4 Pa, then feed Ar gas, adjust the vacuum to the working pressure, deposit tin metal layer, iron metal layer and copper metal layer sequentially on the glass substrate from bottom to top to obtain a layered metal thin film precursor, in which the sputtering The sputtering process parameters of the tin target are: sputtering power 40W, sputtering pressure 1.2Pa, sputtering time is 6 minutes; the sputtering process parameters of the iron target are: sputtering power: 80W, sputtering pressure 1.6Pa , the sputtering time is 5 minutes; the sputtering process parameters of the copper target are: sputtering power: 80W, sputtering pressure 1.6Pa, and the sputtering time is 3 minutes and 50 seconds.

[0030]3....

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Abstract

The invention discloses a preparation method of a copper-ferrum-tin-selenium thin film Cu2FeSnSe4 which can be used as an absorption layer of a thin-film solar cell. The preparation method comprises the following steps: sequentially depositing tin, ferrum and copper metal layers on a glass substrate by using a magnetron sputtering method, to obtain a laminar metal thin film precursor; then putting the laminar metal thin film precursor into a graphite box and adding selenium powder, and performing post-selenylation treatment in a tubular quick annealing furnace, to obtain a target product copper-ferrum-tin-selenium thin film Cu2FeSnSe4, wherein the contents of all metal elements in the copper-ferrum-tin-selenium thin film Cu2FeSnSe4 are regulated by regulating the sputtering and deposition time of the metal layers. The method is simple and convenient, and the component contents of the copper-ferrum-tin-selenium thin film can be accurately controlled so as to be further close to stoichiometric ratio, thus being suitable for mass production.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaic materials, in particular to a method for preparing a copper-iron-tin-selenium thin film that can be used as an absorbing layer of a thin-film solar cell. Background technique [0002] With the deepening of the energy crisis and the increasingly serious environmental pollution, solar cells, as a renewable, clean and non-polluting energy, have attracted more and more attention and attention from all over the world. Solar cells use the photovoltaic effect to directly convert solar energy into electrical energy. So far, many types of solar cells have been studied, such as Si-based solar cells and GeTe solar cells. In the process of industrialization, most of the basic and principled problems have been solved, and the technology is relatively mature. At present, the main problems of major enterprises are how to reduce production costs. [0003] In response to the above problems, thin-film s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/58H01L31/032
Inventor 孟宪宽杨平雄褚君浩
Owner EAST CHINA NORMAL UNIV
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