Method for preparing cross nanofiber P-N heterojunction array

A nanofiber and heterojunction technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for information processing, etc., can solve the problems such as the inability to precisely control the angle of the distance crossing nanofibers, and achieve easy mass production and scientific principles. Reliable, environmentally friendly results

Inactive Publication Date: 2014-07-23
QINGDAO UNIV
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Problems solved by technology

Although the above-mentioned improved electrospinning device can quickly assemble cross-structure fibers, due to the long distance between the spinning head and the collecting plate (several centimeters to more than ten centimeters), the deposition position of nanofibers on the collecting plate, the number of deposited fibers, The distance between parallel fibers, the angle of intersecting nanofibers, etc. cannot be precisely controlled

Method used

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  • Method for preparing cross nanofiber P-N heterojunction array
  • Method for preparing cross nanofiber P-N heterojunction array

Examples

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Embodiment

[0016] In this example, a three-dimensional adjustable low-voltage near-field in-situ electrospinning device is used to realize the preparation of crossed nanofiber P-N heterojunction arrays, and the conductive polymer PEDOT (poly 3,4-dioxyethylthiophene, p-type organic semiconductor) and ZnO (n-type metal oxide inorganic semiconductor) as raw materials to prepare intersecting nanofiber P-N heterojunction arrays. The specific preparation process is as follows:

[0017] (1) Preparation of ZnO spinning precursor solution: 8.5 grams of absolute ethanol and 1.5 grams of polyvinylpyrrolidone (PVP) were mixed and stirred at room temperature for 2-4 hours to obtain a homogeneous and transparent 15wt% PVP solution; then 1.0 gram of zinc acetate, 2.0 grams of absolute ethanol, and 0.2 grams of distilled water were mixed and heated to 60-80° C. and stirred for 8-12 minutes to obtain a mixed solution. After the solid was completely dissolved, the mixed solution was all transferred to a pr...

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Abstract

The invention belongs to the technical field of cross nanofiber preparation, and relates to a method for preparing a cross nanofiber P-N heterojunction array. The method includes the steps of firstly, depositing a layer of P type or N type nanofiber array with the controllable fiber number and the controllable interval on a collector of a three-dimensional adjustable low-voltage near-field in-situ electrostatic spinning device; secondly, rotating the collector by a certain angle; thirdly, depositing a layer of N type or P type orderly-arrayed nanofiber array through the three-dimensional adjustable low-voltage near-field in-situ electrostatic spinning device, and obtaining the cross nanofiber P-N heterojunction array on the collector. The method is simple, scientific and reliable in theory, high in efficiency, accurate in accuracy control, beneficial to large-scale production and environmentally friendly.

Description

Technical field: [0001] The invention belongs to the technical field of crossing nanofiber preparation, in particular to a method for accurately and quickly assembling a nanofiber cross structure P-N heterojunction array, in particular to a preparation method for a crossing nanofiber P-N heterojunction array. Background technique: [0002] The application of nanotechnology in electronic devices, that is, micro-nanoelectronics, has gradually become one of the hotspots in nanotechnology research. According to literature reports, researchers have prepared zero-dimensional nanoparticles (such as single organic molecules, quantum dots, C 60 ), one-dimensional nanofibers (such as single carbon nanotubes, organic or inorganic semiconductor nanofibers / nanotubes), two-dimensional nanofilms (such as graphene), and various nanodevices (such as diodes, triodes, sensors, etc.), especially One-dimensional nanofibers / nanotubes are the smallest dimensional structures that can effectively t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40H01L51/48
CPCB82Y10/00B82Y30/00H10K10/29Y02E10/549
Inventor 龙云泽陈帅盛琛皓韩文鹏董瑞华张红娣
Owner QINGDAO UNIV
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