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Reflective cavity-mirror structure for high-speed q-modulated, wavelength-tunable waveguide lasers

A laser and tuning wave technology, applied in the field of reflective cavity mirror structure, can solve the problems of complex fabrication, inability to increase the modulation bandwidth, and inability to achieve, and achieve the effect of simple process

Inactive Publication Date: 2016-08-24
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the problem is that the modulation bandwidth cannot be improved due to the limitation of laser relaxation oscillation.
In integrated optics technology, high-efficiency optical path reflection is achieved. Simple end-face reflection requires the production of high-reflection film, which is complex and often impossible to achieve. Bragg gratings are the most commonly used reflection structures. The problem is that the production of gratings has special requirements. The frequency selection of the grating is not adjustable

Method used

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  • Reflective cavity-mirror structure for high-speed q-modulated, wavelength-tunable waveguide lasers
  • Reflective cavity-mirror structure for high-speed q-modulated, wavelength-tunable waveguide lasers
  • Reflective cavity-mirror structure for high-speed q-modulated, wavelength-tunable waveguide lasers

Examples

Experimental program
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Effect test

Embodiment 1

[0023] Such as figure 2 As shown, the device is made of silicon-on-insulator (SOI) material, the thickness of the top silicon layer is 220 nm, and the thickness of the silicon dioxide buried layer is 1 μm. Using CMOS technology, through deep ultraviolet lithography and silicon dry etching, a ridge-shaped optical waveguide with a width of 400nm and a depth of 180nm is produced. After the silicon dry etching is completed, the chemical vapor deposition method is used to cover 2μm Silicon layer, composed of figure 2 The basic device structure shown.

[0024] A symmetrical Y branch structure 19 is used in the device as a beam splitting coupling structure. The two optical microrings in the device have radii of 5 μm and 7 μm, respectively. The gap between the optical microring and the two parallel waveguides is 180 nm. The tuning of the optical microring utilizes the thermo-optic effect of silicon to fabricate a heating electrode corresponding to the microring on the silicon di...

Embodiment 2

[0027] Such as image 3 As shown, the device is made of silicon-on-insulator (SOI) material, the thickness of the top silicon layer is 220 nm, and the thickness of the silicon dioxide buried layer is 1 μm. Using CMOS technology, through deep ultraviolet lithography and silicon dry etching, a ridge-shaped optical waveguide with a width of 400nm and a depth of 180nm is produced. After the silicon dry etching is completed, the chemical vapor deposition method is used to cover 2μm Silicon layer, composed of image 3 The basic device structure shown.

[0028] The X cross junction structure 29 is used as the beam splitting coupling structure in the device. The two optical microrings in the device have radii of 5 μm and 5 μm, respectively. The gap between the optical microring and the two parallel waveguides is 180 nm. The tuning of the optical microring utilizes the thermo-optic effect of silicon to fabricate a heating electrode corresponding to the microring on the silicon diox...

Embodiment 3

[0031] Such as Figure 4 As shown, the device is made of silicon-on-insulator (SOI) material, the thickness of the top silicon layer is 220 nm, and the thickness of the silicon dioxide buried layer is 1 μm. Using CMOS technology, through deep ultraviolet lithography and silicon dry etching, a ridge-shaped optical waveguide with a width of 400nm and a depth of 180nm is produced. After the silicon dry etching is completed, the chemical vapor deposition method is used to cover 2μm Silicon layer, composed of Figure 4 The basic device structure shown.

[0032] A directional coupler 39 is used as a beam splitting coupling structure in the device. The two optical microrings in the device have radii of 7 μm and 7 μm, respectively. The gap between the optical microring and the two parallel waveguides is 180 nm. The tuning of the optical microring utilizes the thermo-optic effect of silicon to fabricate a heating electrode corresponding to the microring on the silicon dioxide layer...

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Abstract

The invention discloses a reflective cavity mirror structure used for high-speed Q modulation and wavelength tunable waveguide laser. Including beam-splitting coupling structure, large and small tunable optical microrings and Mach-Zehnder modulation structure; beam-splitting coupling structure as input and reflection output; two optical microrings are respectively coupled with the first and second waveguide evanescent waves It is connected with the beam-splitting coupling structure to realize wavelength tuning, and the two ends of the Mach-Zehnder modulation structure are respectively coupled and connected with the respective optical microring evanescent waves through straight waveguides, which are used to realize the modulation of the reflectivity of the reflective cavity mirror and realize the high-speed Q modulation of the laser. ; The heating electrodes are arranged on the two optical microrings to realize the wavelength tuning of the laser. The invention has the characteristics of high-speed adjustable reflectivity and tunable wavelength, and can be used to construct waveguide lasers with high-speed Q modulation and tunable wavelength. Using two optical microrings, the vernier caliper effect can also be used to increase the range of tunable wavelength of the ring mirror.

Description

technical field [0001] The invention relates to an integrated optical device, in particular to a reflective cavity mirror structure for high-speed Q modulation and wavelength tunable waveguide lasers. Background technique [0002] High-speed optical modulation and wavelength division multiplexing are the main means to improve optical information transmission. The traditional direct modulation method is to directly control the driving current of the laser with the modulation signal to realize the information loading of the output optical signal. However, there is a problem that the modulation bandwidth cannot be increased due to the limitation of the relaxation oscillation of the laser. The indirect modulation method with an external modulator can greatly increase the modulation frequency, but because it processes the laser that has already been output from the laser, half of the energy in the external indirect modulation method is not used, which is very important for the e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/10H01S5/06
Inventor 周志敏虞思城黄兆维杨龙志杨建义
Owner ZHEJIANG UNIV
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