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Metalorganic chemical vapor deposition (MOCVD) growth gas circuit capable of realizing free combination of indium gallium aluminum nitrogen material components and doping, and growth method

A technology of indium gallium aluminum nitride and growth method, which is applied in metal material coating process, gaseous chemical plating, coating and other directions

Active Publication Date: 2014-07-30
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (3), at InxGa(1-x-y)AlyIn the N material semiconductor system, p-type doping is currently achieved by doping magnesium, using InxGa(1-x-y)AlyN:Mg means that at present, in the usual MOCVD growth method, although the amount of magnesium doped is sufficient, the final hole concentration is very low
Growth of nitride semiconductor materials under high pressure can obtain more perfect crystal quality, but due to the short molecular free path and intense pre-reaction under high pressure, high-pressure growth has not been practical

Method used

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  • Metalorganic chemical vapor deposition (MOCVD) growth gas circuit capable of realizing free combination of indium gallium aluminum nitrogen material components and doping, and growth method
  • Metalorganic chemical vapor deposition (MOCVD) growth gas circuit capable of realizing free combination of indium gallium aluminum nitrogen material components and doping, and growth method
  • Metalorganic chemical vapor deposition (MOCVD) growth gas circuit capable of realizing free combination of indium gallium aluminum nitrogen material components and doping, and growth method

Examples

Experimental program
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Effect test

Embodiment 1

[0048] Example 1: InGaN (y=0) material growth gas path, raw material and valve matching method

[0049] like figure 1 As shown, a MOCVD growth gas path in which InGaAlN material components and doping can be freely combined includes: a first pipeline 13, a second pipeline 14, a third pipeline 12 and these three pipelines Connected A and B dual-chamber vertical airflow type MOCVD reaction tube nozzle device, wherein:

[0050] A, B double-chamber vertical air flow type MOCVD reaction tube nozzle device includes: a closed cavity composed of top plate 3, middle plate 4, bottom plate 16 and barrel-shaped side plate 15, between top plate 3 and middle plate 4 A circular cavity 8 is formed, and the circular cavity 8 is divided into two independent cavity A 6 and cavity B 11 by a partition plate 7 passing through the center of the circle, and a water cooling cavity 17 is formed between the middle plate 4 and the bottom plate 16, several gas The injection channel 5 passes through the ...

Embodiment 2

[0056] Example 2: Gas path for growth of low-temperature aluminum-gallium-nitride-doped magnesium (AlGaN:Mg, x=0) material and matching method of raw materials and valves

[0057] The growth gas path of this embodiment is the same as that of Embodiment 1, but the matching method of raw materials and valves is: the first pipeline 13 transports TMGa (or triethylgallium TEGa), the first valve 1 is closed; the second pipeline 14 transports Yun NH 3 , the second valve 2 is closed; the third pipeline 12 transports TMAl and didiocene magnesium; the substrate 10 is covered with aluminum and magnesium under the injection of chamber B 11, and GaN is grown under the injection of chamber A 6, and aluminum ammoniated to AlN , so as to alternately grow AlGaN doped Mg; the temperature of the graphite disk 9 is allowed to be as low as 500°C. Figure 6 It shows the schematic diagram of the matching of raw materials and valves in this embodiment.

Embodiment 3

[0058] Embodiment 3: Indium gallium aluminum nitrogen quaternary material (In x Ga (1-x-y) Al y N) Quantum barrier (QB) growth gas path and matching method of raw materials and valves

[0059] The growth gas path of this embodiment is the same as that of Embodiment 1, but the matching method of raw materials and valves is: the first pipeline 13 transports TMGa (or triethylgallium TEGa) and TMIn, the first valve 1 is closed; the second pipeline 14 transports NH3, the second valve 2 is closed; the third pipeline 12 transports TMAl; the substrate 10 is covered with aluminum under the injection of chamber B 11, and InGaN is grown under the injection of chamber A 6, thereby alternately synthesizing and growing indium gallium Aluminum nitrogen quaternary material. Figure 7 It shows the schematic diagram of the matching of raw materials and valves in this embodiment.

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Abstract

The invention discloses a metalorganic chemical vapor deposition (MOCVD) growth gas circuit capable of realizing free combination of indium gallium aluminum nitrogen material components and doping, and a growth method. The metalorganic chemical vapor deposition (MOCVD) growth gas circuit comprises a first pipeline, a second pipeline, a third pipeline, and an A-B double-chamber vertical airstream-type MOCVD reaction tube nozzle device which is connected with the three pipelines. According to the growth method, gas circuit arrangement is capable of delivering indium, gallium, aluminum, and magnesium to different growth areas respectively, so that a plurality of insufficient caused by combined delivering of indium, gallium, aluminum, and magnesium to the surface of a substrate in traditional methods are avoided; rapid growth of In<x>Ga<1-x-y>Al<y>N material system of whole series of x and y values is realized via novel growth mechanisms; growth temperature and air pressure parameter window are increased, so that rapid delta doping of magnesium can be realized especially.

Description

technical field [0001] The invention relates to an MOCVD growth gas path and method, in particular to an MOCVD growth gas path and method with indium gallium aluminum nitrogen material components and doping that can be freely combined. Background technique [0002] Metal-organic compound vapor deposition growth equipment (MOCVD) has been widely used to grow semiconductor light-emitting materials for light-emitting diodes (LEDs), such as the current InGaAlN semiconductor material system, which is used to manufacture light in the wavelength range from ultraviolet to green. LED has an absolute competitive advantage. For this material system, if doped with magnesium, usually In x Ga (1-x-y) Al y N:Mg means that the stoichiometric ratio of indium, gallium, and aluminum in the material must be equal to 1, and the stoichiometric ratio of nitrogen must be equal. In the periodic table of elements, indium, gallium, and aluminum belong to Group III (Group III) elements, and nitroge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
Inventor 江风益方文卿刘军林张健立全知觉
Owner NANCHANG UNIV