Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing telluric acid

A technology of telluric acid and tellurium powder, applied in the field of compound synthesis, can solve the problems of complex impurity removal process, high cost, unfavorable application and the like

Active Publication Date: 2014-08-13
广东先导稀贵金属材料有限公司
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cost of this method is relatively high, and in industrial production, the amount of sulfuric acid and barium tellurate is not carefully controlled, so that the purity of the obtained telluric acid product is low; Acid solution, then concentrated and crystallized after impurity removal, and dried to obtain telluric acid product
However, the cost of this method is also relatively high. Due to the introduction of impurity elements in the preparation process, the impurity removal process is required. The impurity removal process is relatively complicated, and the purity of the telluric acid product obtained after the impurity removal is still low
[0004] Therefore, the purity of the product obtained by the method for preparing telluric acid in the prior art is relatively low, which is unfavorable for its application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing telluric acid
  • Method for preparing telluric acid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Add 250.0g of 3N tellurium powder with a particle size of less than 325 microns into a 2L quartz beaker containing 500g of deionized water and 500g of 50% industrial-grade hydrogen peroxide under stirring, and then heat up the resulting mixed solution to 95°C. After the temperature rises to a high temperature, the reaction is more violent. After stirring for 2 hours, the solution becomes clear and transparent, and then the solution is filtered while it is hot to obtain a telluric acid solution;

[0036] After suction filtration, heat the obtained solution to 100°C, evaporate the specific gravity of the solution to 1.85g / mL, then stop heating, and after cooling to room temperature, a large number of crystals precipitate out, and the crystals are obtained after filtration;

[0037] The obtained crystals were dried in a vacuum oven at 60°C for 12 hours to obtain a telluric acid sample.

[0038] The mass of the telluric acid sample obtained by weighing in the present invent...

Embodiment 2

[0049] Add 250.0g of 3N tellurium powder with a particle size of less than 325 microns into a 2L quartz beaker containing 750g of deionized water and 500mL of 50% industrial-grade hydrogen peroxide under stirring, and then heat up the resulting mixed solution to 100°C. After the temperature rose to 100°C, the reaction was more violent. After stirring for 2.5 hours, the solution became clear and transparent, and then the solution was filtered while it was hot to obtain a telluric acid solution;

[0050] After suction filtration, heat the obtained solution to 105°C, evaporate the specific gravity of the solution to 1.90g / mL, then stop heating, and after cooling to room temperature, a large number of crystals precipitate out, and the crystals are obtained after filtration;

[0051] After the obtained crystals were vacuum-dried at 70°C for 10 h, a telluric acid sample was obtained.

[0052] The mass of the telluric acid sample obtained by weighing in the present invention is 339.4...

Embodiment 3

[0056] Add 250.0g of 3N tellurium powder with a particle size of less than 325 microns into a 2L quartz beaker containing 1166g of deionized water and 500mL of 50% industrial-grade hydrogen peroxide under stirring, then heat up the resulting mixed solution to 110°C, and wait After the temperature rose to 110°C, the reaction was more violent. After stirring for 3 hours, the solution became clear and transparent, and then the solution was filtered while it was hot to obtain a telluric acid solution;

[0057] After suction filtration, heat the solution to 110°C to evaporate the specific gravity of the solution to 1.95g / mL, then stop heating, and after cooling to room temperature, a large number of crystals precipitate out, and the crystals are obtained after filtration;

[0058] After the obtained crystals were vacuum-dried at 80°C for 6 hours, a telluric acid sample was obtained.

[0059] The mass of the telluric acid sample obtained by weighing in the present invention is 347.4...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Granularityaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing telluric acid, which comprises the following steps: mixing tellurium powder and hydrogen peroxide in water to carry out redox reaction, thereby obtaining a telluric acid solution, wherein the purity of the tellurium powder is greater than 99.9%, and the particle size of the tellurium powder is smaller than 325 micrometers; and concentrating the telluric acid solution to crystallize, thereby obtaining the telluric acid. The raw material tellurium powder with the purity of greater than 99.9% and the particle size of smaller than 325 micrometers and hydrogen peroxide are subjected to redox reaction in water to obtain the telluric acid. By using the tellurium powder with the purity of greater than 99.9% and the particle size of smaller than 325 micrometers as the raw material without introducing new impurities, the prepared telluric acid has higher purity and higher product yield. The experimental result indicates that the telluric acid obtained by the method is Grade 5N, the total impurity content is lower than 10 ppm, and the product yield can reach 77.23%.

Description

technical field [0001] The invention relates to the technical field of compound synthesis, in particular to a method for preparing telluric acid. Background technique [0002] Telluric acid, also known as orthotelluric acid, has the molecular formula H 6 TeO 6 ,soluble in water. Telluric acid can be used as an analytical reagent in analysis, quantitative analysis and separation of bromide and chloride; it can also be used as a raw material for the preparation of tellurium nanowire field effect transistor devices; it can also be used as a raw material for the synthesis of some tellurates, such as sodium tellurate , potassium tellurate, etc. The purity of telluric acid has a great influence on the analysis results and the properties of the prepared products. [0003] At present, there are two commonly used synthesis methods of telluric acid. One is to react sulfuric acid and barium tellurate to prepare telluric acid solution, and then concentrate and crystallize to obtain ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B19/00
Inventor 王波朱刘刘留朱世明朱世会
Owner 广东先导稀贵金属材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com