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Semi-conductive shielding material for high-voltage direct current cables and preparation method thereof

A high-voltage direct current, shielding material technology, applied in the direction of insulating cables, cables, conductors, etc., can solve the problem of volume resistivity change and change of composite materials, and achieve the effect of inhibiting space charge accumulation, inhibiting rearrangement, and preventing electric field concentration

Active Publication Date: 2016-03-02
JIANGSU DEWEI ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for polymer composites using conductive carbon black (CB) as a conductive filler, when the temperature reaches near the melting point, the CB particles will be rearranged in the polymer matrix to change the conductive network, resulting in a change in the volume resistivity of the composite.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] This example provides a kind of semi-conductive shielding material for high-voltage DC cables, and its raw material formula includes the following components by weight:

[0032] 80 parts of polyethylene;

[0033] 4 copies, where n=12, X is TFSI;

[0034] 1.5 parts of dicumyl peroxide;

[0035] Antioxidant 3000.5 parts;

[0036] 0.3 parts of zinc stearate.

[0037] The preparation method comprises the following steps:

[0038] (a) Mix the polyethylene and ionic liquid-modified graphene powder in the prescribed amount for 20 minutes at a temperature of 100°C and a rotation speed of 50r / min to form the first mixture;

[0039] (b) Mix the formulated amount of antioxidant 300 and zinc stearate and add it to the first mixture, mix for 8 minutes at 120°C and 45r / min, then add the peroxide Dicumyl, mixed at 120°C and 45r / min for 6-10 minutes, then extruded and shredded into small particles;

[0040] (c) Place the small pellets on a hot press, heat press them at 175°C an...

Embodiment 2

[0042] This example provides a kind of semi-conductive shielding material for high-voltage DC cables, and its raw material formula includes the following components by weight:

[0043] 92 parts of polypropylene;

[0044] 11 parts, where X is PF 6 ;

[0045] 3 parts of dicumyl peroxide;

[0046] Antioxidant 10101 parts;

[0047] 5 parts of calcium stearate.

[0048] The preparation method comprises the following steps:

[0049](a) mixing the polypropylene and ionic liquid-modified graphene powder in the above parts by weight for 30 minutes at a temperature of 120° C. and a rotation speed of 60 r / min to form a first mixture;

[0050] (b) Mix the antioxidant 1010 and calcium stearate in the above parts by weight and add them to the first mixture, mix for 10 minutes at 140°C and 60 r / min, then add the above parts by weight Several bis-tert-butyl peroxide dicumyl peroxide, mixed for 10 minutes at 130°C and 60r / min, then extruded and chopped into small particles;

[0051] (...

Embodiment 3

[0053] This example provides a kind of semi-conductive shielding material for high-voltage DC cables, and its raw material formula includes the following components by weight:

[0054] 90 parts of ethylene-vinyl acetate copolymers;

[0055] 6 copies, where n=0, X is BF 4 ;

[0056] 2 parts of dicumyl peroxide;

[0057] Antioxidant 3000.8 parts;

[0058] Magnesium stearate 2 parts.

[0059] The preparation method comprises the following steps:

[0060] (a) Mix the ethylene-vinyl acetate copolymer and ionic liquid-modified graphene powder of the above weight for 25 minutes at a temperature of 110° C. and a rotation speed of 55 r / min to form the first mixture;

[0061] (b) Mix the above-mentioned weight of antioxidant 300 and magnesium stearate and add it to the first mixture, mix for 9 minutes at 125°C and a speed of 55 r / min, then add the above-mentioned weight of peroxide Dicumyl, mixed for 8 minutes at 125°C and a rotating speed of 55r / min, extruded and shredded into ...

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Abstract

The invention relates to a semiconductive shielding material for high-voltage direct-current cables, which is prepared from the following raw materials in parts by weight: 80-92 parts of matrix resin, 4-11 parts of ionic liquid modified graphene powder, 1.5-3 parts of crosslinking agent, 0.5-1 part of antioxidant and 0.3-5 parts of lubricant. By adding the 4-11 parts by weight of ionic liquid modified graphene powder into the raw material formula, the semiconductive shielding material for high-voltage direct-current cables can effectively export the current in the semiconductive shielding layer and perform the function of a uniform electric field; and when the temperature of the semiconductive shielding layer achieves to melting point or so, the semiconductive shielding material can effectively inhibit the rearrangement of the graphene powder, prevent the problem of partial discharge or insulation puncture caused by severe electric field centralization of the semiconductive shielding layer due to surface defects, inhibit the space charges in the cable insulation material from accumulation and lower the conductivity.

Description

technical field [0001] The invention relates to a semiconductive shielding material, in particular to a semiconductive shielding material for high-voltage direct current cables and a preparation method thereof. Background technique [0002] With the development of power electronics technology, the advancement of high-power thyristor manufacturing technology, price reduction, improvement of reliability, and improvement of the availability of converter stations, DC transmission technology has become increasingly mature, and DC transmission has been very popular in power systems. Wide range of applications. Compared with AC transmission, DC transmission has the advantages of high transmission efficiency, small line loss, low investment cost, length is not limited by capacitive current, can reduce the short-circuit current between the main line and the grid, and has small corona radio interference. [0003] High-voltage DC cable is one of the key equipment in DC transmission, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L23/06C08L23/12C08L23/08C08K13/06C08K9/04C08K3/04C08K5/14C08K5/098B29C43/58H01B7/17H01B7/18
CPCB29C43/58C08K3/04C08K5/098C08K5/1345C08K5/14C08K5/375C08K9/04C08K13/06C08K2201/003C08K2201/014C08L2203/202H01B3/441H01B7/18C08L23/06C08L23/12C08L23/0853
Inventor 严锋吴潇戴红兵
Owner JIANGSU DEWEI ADVANCED MATERIALS
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