Annealing and wool-making method for monocrystalline silicon wafer

A single-crystal silicon wafer, annealing technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve the problems of uneven pyramid size and high reflectivity, and achieve good uniformity and suede reflectivity. low effect

Inactive Publication Date: 2014-08-13
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The size of the pyramids formed by the general texturing process is not uniform, and

Method used

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  • Annealing and wool-making method for monocrystalline silicon wafer
  • Annealing and wool-making method for monocrystalline silicon wafer
  • Annealing and wool-making method for monocrystalline silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] After the monocrystalline silicon chip is cleaned with a mixture of deionized water, 30% hydrogen peroxide aqueous solution and 30% ammonia aqueous solution in a volume ratio of 5:1 to 2:1, deionized water and The mass fraction is 30% hydrogen peroxide aqueous solution, and the mass fraction is 37% hydrochloric acid aqueous solution, and the volume ratio is 6~8:1~2:1 mixed solution cleaning; The monocrystalline silicon chip after cleaning is hydrofluoric acid, deionized The mixed solution of water and ethanol was rinsed for 1 minute, the volume fraction of hydrofluoric acid in the mixed solution was 8%, and the volume fraction of ethanol was 20%, and then dried with nitrogen; second, take out the silicon chip so that the surface of the silicon chip is stained with texturing liquid, and put it into the tube annealing furnace under N 2 Anneal at 400°C for 20 minutes in the atmosphere, and cool naturally to room temperature after annealing; then place the silicon wafer in ...

Embodiment 2

[0021] The annealing condition of the present embodiment is: at N 2 Annealing at 200° C. for 20 minutes under atmosphere, other steps are the same as in Example 1.

Embodiment 3

[0023] The annealing condition of the present embodiment is: at N 2 Annealing at 300° C. for 20 minutes under atmosphere, other steps are the same as in Example 1.

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Abstract

The invention discloses an annealing and wool-making method for a monocrystalline silicon wafer. The method includes: rinsing a cleaned monocrystalline silicon wafer in a mixed solution of an aqueous hydrofluoric acid solution and an aqueous ethanol solution, adding the monocrystalline silicon wafer moistened with a wool-making liquid into an annealing furnace and annealing, adding the silicon wafer into the wool-making liquid after annealing is finished, and performing wool making. The method is convenient in operation, stable in process and easy to control. The surface pyramids of the silicon wafer after wool making are good in uniformity. The reflectivity of the wool surface is low.

Description

technical field [0001] The invention belongs to the technical field of making crystalline silicon solar cells, and in particular relates to a method for fabricating the surface of a monocrystalline silicon wafer used in a monocrystalline silicon solar cell. Background technique [0002] Monocrystalline silicon solar cell technology is mature, accounting for a major share in the solar cell market, and is currently the mainstream technology for solar photovoltaic power generation. In the manufacturing process of monocrystalline silicon solar cells, in order to improve the performance and efficiency of the cell, it is necessary to make a pyramid textured structure on the surface of the silicon wafer. An effective pyramid textured structure can reduce the reflection of the silicon wafer surface on the incident sunlight and increase the incidence. Scattering of light prolongs the optical path, increases the light absorption of the battery, and correspondingly produces more photog...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B33/02
Inventor 高斐郑逍遥武怡武慧君李付贤纪方旭周松杰王皓石刘生忠
Owner SHAANXI NORMAL UNIV
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