Preparation method for graphene

Abstract

The invention discloses graphene and a preparation method thereof. The preparation method comprises the following steps: (1) providing a metal substrate, cleaning the metal substrate, putting the metal substrate into the reaction chamber of chemical vapor deposition equipment, introducing protective gas into the reaction chamber after sealing, stopping introduction of protective gas and carrying out vacuum-pumping so as to allow the reaction chamber to be in a vacuum state; (2) heating the metal substrate to 400 to 500 DEG C, starting an ultraviolet source, allowing the ultraviolet source to irradiate the surface of the metal substrate, introducing a carbon-containing fluid, carrying out a heat-preserved reaction for 10 to 100 min, stopping introduction of the carbon-containing fluid and stopping heating after completion of the reaction, carrying out cooling to room temperature, opening the chemical vapor deposition equipment and taking the metal substrate out so as to obtain the metal substrate with grown graphene on its surface; and (3) soaking the metal substrate with grown graphene on its surface in a corrosive liquid, removing the metal substrate, carrying out filtering, taking a filter residue and carrying out cleaning and drying so as to obtain graphene. The method adopts a chemical vapor phase process for deposition preparation of graphene on the substrate, guarantees the lamellar structure of graphene, simplifies preparation steps and has small energy consumption and low cost.

Description

technical field [0001] The invention relates to the field of material synthesis, in particular to a method for preparing graphene. Background technique [0002] Graphene is a two-dimensional sheet with carbon atoms arranged in a hexagonal ring. It was first discovered in 2004 by Andre K. Geim of the University of Manchester in the United Kingdom. Graphene material has excellent electrical and thermal conductivity and low thermal expansion coefficient, and its theoretical specific surface area is as high as 2630m 2 / g, so it is widely used in various fields such as effect transistors, liquid crystal displays, batteries, and sensors. [0003] At present, the method of preparing graphene is mainly oxidation-reduction method, specifically, graphite is first made into easy-to-peel graphite oxide under the action of strong acid or strong oxidant, and then a single layer of graphene oxide is formed by ultrasonic method, and finally by strong Reduction methods such as reducing age...

AI Technical Summary

Problems solved by technology

However, since this method must use strong acid or strong oxidant in the preparation process, the sheet structure of graphene is destroyed, resulting in a significant decline in the performance of graphene.

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