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BMN dielectric film microwave voltage-controlled capacitor preparation method

A dielectric thin film and capacitor technology, applied in voltage variable capacitors, etc., can solve problems such as chemical mismatch, achieve high quality factor, moderate tuning rate, and easy implementation

Inactive Publication Date: 2014-09-24
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, BZN contains two volatile substances, bismuth and zinc, which often lead to chemical mismatches caused by the lack of bismuth and zinc elements during material synthesis and thin film preparation.

Method used

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  • BMN dielectric film microwave voltage-controlled capacitor preparation method
  • BMN dielectric film microwave voltage-controlled capacitor preparation method
  • BMN dielectric film microwave voltage-controlled capacitor preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] (1) Preparation of the bottom electrode

[0057] (1) cleaning the substrate;

[0058] Choose a silicon oxide sheet (SiO 2 / Si) as the substrate, ultrasonically cleaned with deionized water for 10 min, ultrasonically cleaned with acetone for 10 min, ultrasonically cleaned with alcohol for 10 min, and then ultrasonically cleaned with deionized water for 10 min on SiO 2 / Si substrate is cleaned, and the substrate is dried quickly after cleaning;

[0059] (2) Spin-on photoresist

[0060] SiO 2 The / Si substrate is vacuum adsorbed on the adsorption table of the homogenizer, and the photoresist is dropped on the center of the substrate; the rotation speed is selected as 1500 rpm, and the holding time is 10 seconds, and the photoresist is evenly coated on the surface of the substrate , forming a good contact; the obtained photoresist was tested by a D-100 step meter, and the thickness of the photoresist coating was 2 μm;

[0061] (3) Pre-baking

[0062] Place the substra...

Embodiment 2～5

[0096] The preparation steps of Examples 2-5 are the same as those of Example 1, except that the device size and the effective area of ​​the capacitor are different. The distinguishing features of each example and their related microwave properties are shown in Table 1.

[0097] Table 1

[0098]

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PUM

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Abstract

The invention discloses a BMN dielectric film microwave voltage-controlled capacitor preparation method. At first, a bottom electrode is prepared, then a bismuth magnesium niobate dielectric film layer is prepared through the spin-coating and heat treatment method, and then the dielectric film layer is patterned, and a top electrode is prepared on the patterned dielectric film layer; wherein the device size is (550-1200)*(250-600)mum<2>, and the capacitance effectively area is (20-200)*(20-200)mum<2>. The preparation process of the invention is simple and is easy to implement; the prepared product has the advantage of high quality factor (the Q value) in the microwave frequency band, and advantages of moderate tuning rate and good device stability can be realized, and a good device basis is provided for the development and application of a modern microwave communication system.

Description

technical field [0001] The invention belongs to the field of electronic information materials and components, and in particular relates to a BMN (bismuth magnesium niobate dielectric film microwave voltage-controlled capacitor) used for microwave tuning components. Background technique [0002] Microwave voltage-controlled capacitors play an extremely important role in modern military radar and microwave communication technology. The rapid development of military field and civilian wireless communication technology has put forward higher requirements for microwave voltage-controlled devices. Microwave voltage-controlled dielectric film capacitors with high response speed, high bandwidth, high sensitivity, low operating voltage, miniaturization and low cost, etc. It is an indispensable and important part of the future microwave system. [0003] In order to achieve the purpose of improving the tuning rate and reducing the loss, the research on microwave voltage-controlled cap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G7/06
Inventor 李玲霞董和磊金雨馨于仕辉许丹
Owner TIANJIN UNIV
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