Method for pretreating polycrystalline silicon thin film manufactured through laser crystallization with hydrogen plasma
A technology of polysilicon thin film and plasma, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of complex design and manufacture of mask plates, and difficult control of precise positions, so as to reduce the density of crystal nuclei, low cost, The effect of improving film performance
Inactive Publication Date: 2014-10-01
NANKAI UNIV
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However, this method also has disadvantages. For example, the design and manufacture of the mask is more complicated, and the slit width and slit spacing reach the micron level; in addition, two irradiations are required, and the mask needs to be moved for the second irradiation, and the precise position is difficult to control.
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[0021] A method for preparing a polysilicon film by hydrogen plasma pretreatment laser crystallization, comprising the steps of:
[0022] 1) Deposit an amorphous silicon film with a thickness of 150nm on a quartz glass substrate by plasma-enhanced chemical vapor deposition (PECVD) at 120°C as a crystallization precursor;
[0023] 2) Anneal the above-mentioned crystallization precursor, the annealing temperature is 400°C, and the annealing time is 3h;
[0024] 3) The above annealed crystallization precursor is pretreated with hydrogen plasma by plasma enhanced chemical vapor deposition (PECVD), and the process parameters are: RF power 0.16W / cm 2 , the pressure in the chamber is 120Pa, the pretreatment temperature is 600°C, and the pretreatment time is 20min;
[0025] 4) The crystallization precursor after hydrogen plasma treatment is subjected to secondary annealing treatment, the annealing temperature is 400°C, and the annealing time is 3h;
[0026] 5) Scan and irradiate the...
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Abstract
A method for pretreating a polycrystalline silicon thin film manufactured through laser crystallization with hydrogen plasma includes the steps that after a crystallization precursor is deposited on a quartz glass substrate, annealing treatment is performed; after hydrogen plasma pretreatment is performed with a plasma-enhanced chemical vapor deposition method, secondary annealing treatment is performed; lasers of a laser are used for irradiating the crystallization precursor subjected to the secondary annealing treatment so that the crystallization precursor can be crystallized to polycrystalline silicon, and the polycrystalline silicon thin film can be manufactured. The polycrystalline silicon thin film manufactured through laser crystallization with hydrogen plasma has the advantages that the manufacturing method is compatible with a common microelectronic technology and low in cost; the performance of the thin film can be improved by controlling the hydrogen plasma pretreatment; the manufactured polycrystalline silicon thin film can be widely applied to making a full-integration display system made of a polycrystalline silicon thin film transistor, a polycrystalline silicon transistor circuit, a display pixel circuit, a photoelectronic device, an area array sensor, a panel display substrate, a polycrystalline silicon circuit and a pixel electrode and has important practical value.
Description
technical field [0001] The invention relates to the preparation technology of polysilicon thin film material, in particular to a method for preparing polysilicon thin film by hydrogen plasma pretreatment laser crystallization. Background technique [0002] Amorphous silicon and polycrystalline silicon are currently the mainstream thin film materials used to prepare the active layer of the active address matrix. Compared with amorphous silicon, polysilicon has higher mobility and better stability, and is suitable for preparing high-quality, high-resolution, low-power consumption and high-stability active addressing displays. The application on a fully integrated small-sized display has obvious advantages. However, its preparation process is relatively complicated, and its preparation cost is relatively high. If you want to compete with amorphous silicon in large-scale active site selection technology, you must develop a low-cost material preparation technology suitable for...
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IPC IPC(8): H01L21/20H01L21/268
CPCH01L21/02422H01L21/02532H01L21/02595H01L21/0262H01L21/02664H01L21/02686
Inventor 李娟景月月吕朋浩刘政鹏
Owner NANKAI UNIV