Method for producing MOS transistor

Abstract

A method for producing an MOS transistor comprises the steps that a semiconductor substrate is provided, the surface of the semiconductor substrate is provided with dummy grids, side walls and dielectric layers, wherein the side walls are located at the two sides of the dummy grids, the semiconductor substrate and the side walls are covered with the dielectric layers, and the top surfaces of the dielectric layers are flush with the top surfaces of the dummy grids; the dummy grids are removed, so that openings are formed and parts of the surface of the semiconductor substrate are exposed through the openings; fluoridation is conducted on the parts, exposed through the openings, of the surface of the semiconductor substrate through a fluorine-containing solution, so that fluorine-containing surfaces are formed; interface layers are formed on the fluorine-containing surfaces; grid dielectric layers are formed on the interface layers and grid electrodes are formed on the grid dielectric layers. According to the method for producing the MOS transistor, the negative bias temperature instability effect and the hot carrier injection effect are lowered and the reliability of the MOS transistor is high.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a MOS transistor. Background technique [0002] With the continuous development of semiconductor technology, the feature size of MOS transistors is continuously reduced, and the thickness of the gate dielectric layer of MOS transistors is also becoming thinner and thinner according to the principle of proportional reduction. The silicon oxide layer has reached its physical limit as a gate dielectric layer. Using a high-K gate dielectric layer to replace the silicon oxide gate dielectric layer can greatly increase its physical thickness while keeping the equivalent oxide thickness (EOT) constant, thereby reducing The gate leakage current is reduced. However, since the high-K gate dielectric layer is mostly metal ion oxide, and there is no fixed atomic coordination, the stability of the bond between it and the silicon substrate is compared with the stab...

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Problems solved by technology

[0006] The problem solved by the invention is that the negative bias temperature instability effect and hot carrier injection effect are obvious in the MOS transistor formed in the prior art, and the reliability is not good

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