Packaging and interconnecting structure and method for copper protruded points filled up with double layers of underfill
A technology of interconnection structure and bottom filling glue, which is applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of unsatisfactory reliability of copper bumps and the inability to reduce stress at the chip end, and achieve improved electrical connection characteristics and mechanical stability, reducing stress, improving reliability and thermal stability
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[0050] In order to fully reflect the advantages and positive effects of the present invention, the substantive features and significant progress of the present invention will be further described below with reference to the accompanying drawings and embodiments.
[0051] figure 1 The active surface of the chip is coated with a thick layer of photoresist 104, wherein the bump pitch is 120 μm, the diameter of the UBM opening is about 60 μm, and the thickness of the photoresist is about 30 μm.
[0052] figure 2 It is exposed at the corresponding position of the UBM, and the UBM is exposed at the corresponding position after development.
[0053] image 3 It is a schematic diagram of the shape of the copper bump formed by sputtering the seed layer at the copper bump position, followed by electroplating and degumming. The copper bumps are 60 μm in diameter and 30 μm in height.
[0054] Figure 4 After the copper bumps are plated, the first layer of underfill is spin-coated t...
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