Packaging and interconnecting structure and method for copper protruded points filled up with double layers of underfill

A technology of interconnection structure and bottom filling glue, which is applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of unsatisfactory reliability of copper bumps and the inability to reduce stress at the chip end, and achieve improved electrical connection characteristics and mechanical stability, reducing stress, improving reliability and thermal stability

Active Publication Date: 2014-10-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF5 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the industry still uses the traditional method for underfill filling, which cannot effectively reduce the stress on the chip end, resulting in unsatisfactory reliability of copper bumps.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Packaging and interconnecting structure and method for copper protruded points filled up with double layers of underfill
  • Packaging and interconnecting structure and method for copper protruded points filled up with double layers of underfill
  • Packaging and interconnecting structure and method for copper protruded points filled up with double layers of underfill

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] In order to fully reflect the advantages and positive effects of the present invention, the substantive features and significant progress of the present invention will be further described below with reference to the accompanying drawings and embodiments.

[0051] figure 1 The active surface of the chip is coated with a thick layer of photoresist 104, wherein the bump pitch is 120 μm, the diameter of the UBM opening is about 60 μm, and the thickness of the photoresist is about 30 μm.

[0052] figure 2 It is exposed at the corresponding position of the UBM, and the UBM is exposed at the corresponding position after development.

[0053] image 3 It is a schematic diagram of the shape of the copper bump formed by sputtering the seed layer at the copper bump position, followed by electroplating and degumming. The copper bumps are 60 μm in diameter and 30 μm in height.

[0054] Figure 4 After the copper bumps are plated, the first layer of underfill is spin-coated t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a packaging and interconnecting structure and method for copper protruded points filled up with double layers of underfill. The packing and interconnecting structure is characterized in that the chip end is filled up with the first layer of underfill, the first layer of underfill is manufactured on a wafer through spin coating process, the substrate end is filled up with the second layer of underfill, the substrate end is filled through capillary effects after flip-chip welding is finished, the glass transition temperature and the Young modulus of the first layer of underfill are lower than those of the second layer of the underfill, a chip and a substrate are connected through the copper protruded points and tin-contained solder protruded points to achieve high-density connection, and the copper protruded points are manufactured in twice to guarantee that the first layer underfill is completely filled and the contact between the protruded points and the tin-contained solder is enough. The whole technological process is compatible with existing IC process and has higher vertical interconnection density, better electric connection characteristics and higher mechanical stability. Heating thermal circulation tests show that the service life of chips of the packaging structures is greatly prolonged.

Description

technical field [0001] The invention relates to a double-layer bottom-filling glue-filled copper bump package interconnection structure and method, belonging to the field of advanced electronic packaging. Background technique [0002] In flip-chip bonding, bumps are required to connect the chip and the substrate. Due to the large difference in thermal expansion coefficients between materials, a large thermal stress will be generated. In order to ensure the integrity of the bumps, it is necessary to fill the underfill so that the concentrated stress can be obtained. dispersion. For traditional tin-containing solders and organic substrates, the underfill is required to have a high glass transition temperature, a large Young's modulus and a thermal expansion coefficient. [0003] With the development of IC technology in the direction of smaller size and higher density, the delay effect between interconnect lines has attracted more and more attention, and has become a bottlenec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L23/538H01L21/768H01L21/56
CPCH01L2224/16225H01L2224/73204H01L2224/92125
Inventor 朱春生宁文果李桁徐高卫罗乐
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap