Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A preparation method of bismuth-based thin film with high tuning rate

A bismuth-based, high-profile technology, applied in ion implantation plating, metal material coating process, coating, etc., to achieve the effect of good crystallinity, orientation and tuning performance improvement

Inactive Publication Date: 2016-09-21
TIANJIN UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a bismuth-based thin film with a high tuning rate, so as to solve the transition layer problem existing in the preparation process of the bismuth-based thin film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A preparation method of bismuth-based thin film with high tuning rate
  • A preparation method of bismuth-based thin film with high tuning rate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Clean the substrate substrate

[0028] Select a silicon substrate with a platinum electrode on the surface, place it in an alcoholic organic solvent for ultrasonic cleaning, rinse it with deionized water, and dry it in a nitrogen stream.

[0029] The substrate of the present invention may be a silicon substrate, an alumina substrate or a conductive glass substrate; the electrodes may be gold electrodes or platinum electrodes.

[0030] (2) Deposition induction layer

[0031] (a) Put the cleaned silicon substrate into the magnetron sputtering vacuum chamber, install the zinc bismuth niobate target on the corresponding radio frequency sputtering target, and start the vacuuming procedure.

[0032] (b) Wait until the vacuum degree reaches 9×10 -5 Torr, turn on the radio-frequency current source corresponding to the zinc-bismuth niobate target, pass in the working gas argon, complete radio-frequency magnetron sputtering, and prepare the zinc-bismuth niobate induction la...

Embodiment 2

[0041] The preparation process of Example 2 is the same as that of Example 1, except that the annealing temperature of the zinc-bismuth niobate induction layer is 650° C., and the tuning rate measured in Example 2 under the same conditions is 33%.

Embodiment 3

[0043] The preparation process of Example 3 is the same as that of Example 1, except that the annealing temperature of the zinc-bismuth niobate induction layer is 700° C., and the tuning rate measured in Example 2 under the same conditions is 31%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a bismuth-based thin film with a high tuning rate: first, a substrate is cleaned, and then a zinc-bismuth niobate induction layer is prepared on the substrate, and then annealing is performed at 650°C-750°C; Then deposit and prepare the magnesium bismuth niobate thin film layer on the substrate with the zinc bismuth niobate induction layer, and finally anneal at 750° C. to prepare the magnesium bismuth niobate thin film with high tuning rate bismuth base structure. Compared with the prior art, the invention has better crystallinity, significantly improved orientation and tuning performance, and the tuning rate increases from 30% to 35%.

Description

technical field [0001] The invention belongs to the field of electronic information materials and components, in particular to a method for preparing a high-performance bismuth-based thin film used for tuning Background technique [0002] With the rapid development of microwave communication systems, people put forward higher requirements for microwave devices, especially microwave tuning devices. Microwave tuning devices with fast response speed, small size, wide frequency band, high sensitivity and low operating voltage are indispensable components of current and next-generation communication systems. These requirements have brought great challenges to current electronic materials and components. [0003] Microwave dielectric tunable materials are widely used in microwave tunable components, such as phase shifters, resonators and filters on phased array antennas. In recent years, bismuth-based structural materials have attracted extensive attention due to their excellent...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 李玲霞许丹于士辉董和磊金雨馨
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com