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A piezoresistive sensing element and its preparation method

A technology of sensing element and diamond, applied in the field of piezoresistive sensing element and its preparation, to achieve the effect of good chemical inertness

Active Publication Date: 2016-08-17
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, the traditional SiGe-based piezoresistive MEMs system has faced the performance limit challenge, and there is an urgent need to develop new piezoresistive sensing elements

Method used

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  • A piezoresistive sensing element and its preparation method
  • A piezoresistive sensing element and its preparation method
  • A piezoresistive sensing element and its preparation method

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Experimental program
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Embodiment 1

[0033] In this embodiment, the structure of the piezoresistive sensing element is as follows figure 1 As shown, it consists of a PET substrate 1 , an amorphous carbon film 2 , and a metal electrode 3 , the diamond-like carbon film 2 is located on the surface of the substrate 1 , and the metal electrode 3 is located on the surface of the diamond-like carbon film 2 .

[0034] The preparation method of the piezoresistive sensing element comprises the following steps:

[0035] (1) The PET substrate was ultrasonically cleaned with ethanol, dried and placed in a vacuum chamber, and pre-vacuumized to 2.5×10 -3 Pa; Pass argon gas into the cavity through the ion source of the anode layer to maintain the pressure at 0.37Pa, apply a DC pulse bias voltage of -100V on the substrate, turn on the ion source of the anode layer, the current is 0.2A, and use ionized argon Ion etching the substrate surface, this process lasts for 5 minutes;

[0036] (2) Pass C through the anode layer ion sourc...

Embodiment 2

[0046] In this embodiment, the structure of the piezoresistive sensing element is as follows figure 1 shown by Al 2 o 3 Composed of a substrate, an amorphous carbon film and a metal electrode, the diamond-like carbon film is located on the surface of the substrate, and the metal electrode is located on the surface of the diamond-like carbon film.

[0047] The preparation method of the piezoresistive sensing element comprises the following steps:

[0048] (1)Al 2 o 3 The substrate was ultrasonically cleaned with ethanol, dried and placed in a vacuum chamber, pre-evacuated to 2.0×10 -3 Pa; Introduce argon gas into the chamber to maintain the air pressure at 1Pa, apply a pulse bias voltage of -50V on the substrate, and use ionized argon ions to etch the substrate surface, and this process lasts for 20 minutes;

[0049] (2) Pass C through the anode layer ion source into the cavity 2 h 2 The amorphous carbon film is deposited by gas, the chamber pressure is kept at 0.3Pa, th...

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Abstract

The invention provides a piezoresistive sensing element. The piezoresistive sensing element uses a diamond-like carbon film as a piezoresistive material, and consists of a substrate, a diamond-like carbon film on the surface of the substrate, and a metal electrode on the surface of the diamond-like carbon film. Compared with the existing piezoresistive sensing elements, the element has a high sensitivity coefficient GF value, and due to the isotropy of amorphous carbon, its sensitivity in all directions is the same, and the GF value can be adjusted by changing process parameters ; In addition, the component can work in special environments and working conditions such as strong acid-base environment and frictional contact service, so it has a good application prospect.

Description

technical field [0001] The invention belongs to the technical field of piezoresistive sensing devices, in particular to a piezoresistive sensing element and a preparation method thereof. Background technique [0002] At present, piezoresistive microelectromechanical systems (MEMs) represented by single crystal Si, polycrystalline Si, Ge and silicon germanium alloys have been widely researched and applied. However, with the increasing development of high-tech industries such as electronic information, aerospace, marine, and biomedicine, the strain and piezoresistive sensors used in traditional silicon-germanium-based MEMs systems have been difficult to meet more stringent service performance requirements, and it is necessary to research and develop new Strain sensing materials and sensors. [0003] In piezoresistive sensing materials, the sensitivity coefficient GF value is defined as the ratio of resistance change rate to deformation change rate, which is one of the importa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B7/16C23C28/00
Inventor 汪爱英郭鹏李润伟张栋杨华礼柯培玲
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI