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Metal-doped amorphous carbon piezoresistive sensing element, its preparation method and control method

A technology of metal doping and sensing elements, which is applied in the direction of using electric/magnetic devices to transfer sensing components, metal material coating process, ion implantation plating, etc., can solve problems such as sensitivity limitation, unfavorable practical application, high TCR, etc.

Active Publication Date: 2017-10-03
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The preparation cost of polycrystalline Si is low, and it is widely used in piezoresistive sensors, which can realize the trend of miniaturization and integration. However, the GF value of ordinary polycrystalline Si is lower than 30, which greatly limits the sensitivity, and contains more H The TCR value of crystalline Si is as high as 8×10 4 ppmK -1
[0006] Diamond-like carbon film, the English name is Diamond like carbon, referred to as DLC, which is a general term for a type of amorphous carbon film, which can show a high GF value, but at the same time DLC has a high TCR, up to thousands of ppmK -1 , which is still not conducive to the practical application of DLC in piezoresistive sensing
[0007] Therefore, for piezoresistive sensing that requires high sensitivity, wide temperature range adaptability, and frictional contact, the traditional SiGe-based piezoresistive MEMs system and the new pure amorphous carbon film are difficult to meet, which requires a new piezoresistive Materials and piezoresistive elements

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  • Metal-doped amorphous carbon piezoresistive sensing element, its preparation method and control method
  • Metal-doped amorphous carbon piezoresistive sensing element, its preparation method and control method
  • Metal-doped amorphous carbon piezoresistive sensing element, its preparation method and control method

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Experimental program
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Effect test

Embodiment 1

[0036] In this embodiment, the piezoresistive sensing element consists of a PET substrate, a tungsten-doped amorphous carbon film and a metal Cr electrode. The tungsten-doped amorphous carbon film is located on the surface of the PET substrate, and the metal Cr electrode is located on the tungsten-doped amorphous carbon film surface.

[0037] The preparation method of the piezoresistive sensing element comprises the following steps:

[0038] (1) The PET substrate was ultrasonically cleaned with ethanol, dried and placed in a vacuum chamber, and pre-vacuumized to 2.5×10 -3 Pa; Pass argon gas into the coating chamber through the ion source of the anode layer to maintain the air pressure at 0.37Pa, apply a DC pulse bias voltage of -100V on the substrate, turn on the ion source of the anode layer, and use the ionization current of 0.2A to Argon ions etch the surface of the substrate, and this process lasts for 5 minutes;

[0039] (2) Pass C into the coating cavity through the anod...

Embodiment 2

[0048] In this embodiment, the structure of the piezoresistive sensing element is completely the same as that in Embodiment 1.

[0049] In this embodiment, the preparation method of the piezoresistive sensing element is basically the same as that in Embodiment 1, except that the sputtering target current in step (2) is 1.8A.

[0050] A piezoresistive effect test is performed on the piezoresistive sensing element prepared above, that is, the piezoresistive sensing element is stretched to observe the change of its resistance. The piezoresistive sensing element is deformed by the micro-stretching device and the semiconductor parameter instrument; the I-V curve of the piezoresistive sensing element at room temperature is tested by the semiconductor parameter instrument, and the linear contact area is calculated. The resistance value R is obtained, and the relationship between the resistance change rate and the strain change is obtained through the following formula:

[0051]

...

Embodiment 3

[0057] In this embodiment, the piezoresistive sensing element is made of Al 2 o 3 Substrate, tungsten-doped amorphous carbon film and metal Al electrode, tungsten-doped amorphous carbon film on Al 2 o 3 On the surface of the substrate, the metal Al electrode is located on the surface of the tungsten-doped amorphous carbon film.

[0058] The preparation method of the piezoresistive sensing element comprises the following steps:

[0059] (1)Al 2 o 3 The substrate was ultrasonically cleaned with ethanol, dried and placed in a vacuum chamber, pre-evacuated to 2.0×10 -3 Pa; Introduce argon gas into the coating chamber to maintain the air pressure at 1Pa, apply a pulse bias voltage of -50V on the substrate, and use ionized argon ions to etch the substrate surface, and this process lasts for 20 minutes;

[0060] (2) Pass C into the coating cavity through the anode layer ion source 2 h 2 The carbon source is provided by the gas, and the magnetron sputtering source is turned on...

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Abstract

The invention provides a metal-doped amorphous carbon piezoresistive sensing element. The piezoresistive sensing element is composed of a substrate, a metal-doped amorphous carbon film, and a metal electrode. The metal-doped amorphous carbon film is located on the surface of the substrate, and the metal electrode is located on the surface of the metal-doped amorphous carbon film. Compared with the existing piezoresistive sensing element, the piezoresistive sensing element has a lower TCR value, and by adjusting the process parameters, not only the GF value of the element, but also the TCR value of the element can be adjusted, so as to obtain a The piezoresistive sensing element with high GF value and low TCR value realizes the high sensitivity and wide temperature range adaptability of the piezoresistive sensing element.

Description

technical field [0001] The invention belongs to the field of thin-film sensors, and in particular relates to a metal-doped amorphous carbon piezoresistive sensing element, a preparation method and a control method thereof. Background technique [0002] At present, piezoresistive microelectromechanical systems (MEMs) represented by single crystal Si, polycrystalline Si, Ge and silicon germanium alloys have been widely researched and applied. However, with the increasing development of high-tech industries such as electronic information, aerospace, marine, and biomedicine, the strain and piezoresistive sensors used in traditional silicon-germanium-based MEMs systems have been difficult to meet more stringent service performance requirements, and it is necessary to research and develop new Strain sensing materials and sensors. [0003] In piezoresistive sensing materials, the sensitivity coefficient GF value and the temperature coefficient of resistance TCR are two important p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/04C23C14/54G01D5/16
Inventor 汪爱英郭鹏李润伟张栋檀洪伟柯培玲
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI