Unlock instant, AI-driven research and patent intelligence for your innovation.

LED chip side wall etching method and LED chip manufactured according to LED chip side wall etching method

A technology of LED chip and corrosion method, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of limited brightness improvement of LED chips and cannot be mass-produced, and achieve the effect of reducing investment and improving brightness

Active Publication Date: 2014-10-08
XIANGNENG HUALEI OPTOELECTRONICS
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a LED chip sidewall etching method and the LED chip produced therefrom, so as to solve the technical problem in the prior art that sidewall corrosion has limited brightness improvement of LED chips and cannot be used in mass production.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED chip side wall etching method and LED chip manufactured according to LED chip side wall etching method
  • LED chip side wall etching method and LED chip manufactured according to LED chip side wall etching method
  • LED chip side wall etching method and LED chip manufactured according to LED chip side wall etching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Using sapphire as a substrate, a GaN-based epitaxial layer of 8 μm is grown on the substrate by MOCVD (metal organic chemical vapor deposition) to obtain a wafer. For the specific growth method, refer to the preparation method and parameters in the CN10302290A publication.

[0051] Wash 10,000 wafers of 17mil*34mil with diluted KOH solution and send them to the yellow light room for photolithography. The photolithography makes a 17*34 pattern, and uses ICP to dry-etch the steps of the 17*34 pattern. The etching depth is 2 μm, and then the photoresist is removed with a glue remover. Next, a layer of photoresist with a thickness of 500nm is deposited on the front of the wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition) as an acid-resistant barrier layer. After that, the protective solution is evenly distributed on the acid-resistant barrier layer, and the protective solution is dried under an ion fan to obtain a protective coating.

[0052] Then cut along the c...

Embodiment 2

[0058] Using sapphire as a substrate, a GaN-based epitaxial layer of 8 μm is grown on the substrate by MOCVD (metal organic chemical vapor deposition) to obtain a wafer. For the specific growth method, refer to the preparation method and parameters in the CN10302290A publication.

[0059] Wash 10,000 wafers of 17mil*34mil with diluted KOH solution and send them to the yellow light room for photolithography. The photolithography makes a 17*34 pattern, and uses ICP to dry-etch the steps of the 17*34 pattern. The etching depth is 1-2 μm, and then the photoresist is removed with a glue remover. Then, a layer of photoresist with a thickness of 500nm is deposited on the front of the wafer by PECVD as an acid-resistant barrier layer, and then a layer of protective solution that can prevent cutting debris from being damaged is coated on the acid-resistant barrier layer. The protective solution is placed under the ion fan Dry to obtain a protective coating.

[0060] Then cut along th...

Embodiment 3

[0066] Using sapphire as a substrate, a GaN-based epitaxial layer of 8 μm is grown on the substrate by MOCVD (metal organic chemical vapor deposition) to obtain a wafer. For the specific growth method, refer to the preparation method and parameters in the CN10302290A publication.

[0067]Wash 10,000 28mil*28mil wafers with diluted KOH solution and send them to the yellow light room for photolithography. The photolithography makes a 28*28 pattern, and uses ICP to etch the steps of the 28*28 pattern. The etching depth is 1-2 μm, and then the photoresist is removed with a glue remover. Then, a layer of SiO with a thickness of 400nm is deposited on the front of the wafer by PECVD (plasma enhanced chemical vapor deposition). 2 Acts as an acid-resistant barrier. Afterwards, a layer of protective solution that can prevent cutting debris from being damaged is coated on the acid-resistant barrier layer, and the protective solution is dried under an ion fan to obtain a protective coat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an LED chip side wall etching method and an LED chip manufactured according to the LED chip side wall etching method. The LED chip is obtained by cutting a wafer, and the wafer comprises a substrate and an epitaxial layer structure growing on the top face of the substrate. The side wall etching method sequentially comprises the following wafer etching steps of the first side wall etching, wherein the wafer is etched for 1-2 minutes inside a first side wall etching groove filled with corrosive acid of 100-120 DEG C, the second side wall etching, wherein the wafer is etched for 10-30 minutes inside a second side wall etching groove filled with corrosive acid of 270-290 DEG C, and the third side wall etching, wherein the wafer is etched for 1-2 minutes inside the first side wall etching groove filled with corrosive acid of 100-120 DEG C. The side wall etching method can improve the brightness of the obtained LED chip by 20% and reduce the wafer breakage rate in the thinning process of the wafer.

Description

technical field [0001] The invention relates to the field of LED (light emitting diode) chip production, in particular to an LED chip sidewall etching method and the LED chip produced therefrom. Background technique [0002] GaN materials have many advantages such as wide bandgap, high electron drift saturation velocity, high thermal conductivity, and good chemical stability. GaN is difficult to obtain single crystal, the epitaxial layer grown on GaN base has high dislocation density, excessive n-type background carrier concentration and poor p-type doping effect limit the development of GaN-based LED chips. The external quantum efficiency of the GaN-based LED chip is not high. [0003] Side wall etching can effectively remove many impurities accumulated on the cutting line after laser beam cutting, so as to prevent these impurities from absorbing light, thereby improving the luminous brightness of the LED chip. It is estimated that the sidewall etching process can increas...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/20
CPCH01L21/30617H01L33/007H01L33/20
Inventor 艾国齐
Owner XIANGNENG HUALEI OPTOELECTRONICS