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Chemical polishing solution and dislocation measurement method for indium phosphide slice

An indium cutting sheet and chemical polishing technology, which is applied in the field of dislocation density measurement of cutting sheets and semiconductor crystal materials, can solve the problems of complicated process, difficult dislocation density measurement, long cycle, etc., and achieve the effect of simple operation process

Active Publication Date: 2014-12-03
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the dislocation density of the crystal is revealed by corroding the cutting sheet after chemical mechanical polishing, and chemical mechanical polishing requires grinding, chamfering, sticking wax, patching, rough polishing, semi-finish polishing, fine polishing and other processes , the process is complicated, the cycle is long, and the irregular wafer is not easy to process, so it is difficult to measure the dislocation density

Method used

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  • Chemical polishing solution and dislocation measurement method for indium phosphide slice
  • Chemical polishing solution and dislocation measurement method for indium phosphide slice
  • Chemical polishing solution and dislocation measurement method for indium phosphide slice

Examples

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Embodiment 1

[0029] A method for measuring dislocations of indium phosphide cut sheets, comprising the following steps:

[0030] (1) Prepare a chemical polishing solution. The chemical polishing solution is composed of phosphoric acid, hydrobromic acid and hydrogen peroxide; the volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1:2:1; the mass fraction of phosphoric acid is 85%, and the mass fraction of hydrobromic acid is 40%, and the mass fraction of hydrogen peroxide is 30%.

[0031] (2) Put the indium phosphide cutting piece with the jig into the polishing solution for chemical polishing and corrosion. The chemical polishing and corrosion time is 3 minutes. After the chemical polishing and corrosion is completed, take it out and quickly put it into deionized water for cleaning and drying.

[0032] (3) Prepare the dislocation etching solution: the dislocation etching solution is composed of phosphoric acid and hydrobromic acid; the volume ratio of phosphoric aci...

Embodiment 2

[0035] A method for measuring dislocations of indium phosphide cut sheets, comprising the following steps:

[0036] (1) Prepare a chemical polishing solution. The chemical polishing solution is composed of phosphoric acid, hydrobromic acid and hydrogen peroxide; the volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1:2:1; the mass fraction of phosphoric acid is 85%, and the mass fraction of hydrobromic acid is 40%, and the mass fraction of hydrogen peroxide is 30%.

[0037] (2) Place the indium phosphide cutting piece on the jig, which is made of quartz material, put the indium phosphide cutting piece with the jig into the vessel, mix phosphoric acid and hydrobromic acid in a ratio of 1:2 by volume, Stir evenly and pour into the above container, slowly pour the hydrogen peroxide into the above container, and place the whole container in a place with unobstructed ventilation. When hydrobromic acid and hydrogen peroxide mix, a chemical reaction will occu...

Embodiment 3

[0041] A method for measuring dislocations of indium phosphide cut sheets, comprising the following steps:

[0042] (1) Prepare a chemical polishing solution. The chemical polishing solution is composed of phosphoric acid, hydrobromic acid and hydrogen peroxide; the volume ratio of phosphoric acid, hydrobromic acid and hydrogen peroxide is 1:2:1; the mass fraction of phosphoric acid is 85%, and the mass fraction of hydrobromic acid is 40%, and the mass fraction of hydrogen peroxide is 30%.

[0043] (2) Put the indium phosphide cutting piece with the jig into the polishing solution for chemical polishing and corrosion. The chemical polishing and corrosion time is 3 minutes. After the chemical polishing and corrosion is completed, take it out and quickly put it into deionized water for cleaning and drying. During use, first pour phosphoric acid into the container, then slowly pour hydrobromic acid into it, put the indium phosphide cutting piece into the mixture of the above two ...

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Abstract

The invention discloses a chemical polishing solution and a dislocation measurement method for an indium phosphide slice, and belongs to the technical field of semiconductor crystal material. The polishing solution is composed of phosphoric acid, hydrobromic acid and hydrogen peroxide. The dislocation measurement method comprises the following steps: (1) preparing the chemical polishing solution which is composed of phosphoric acid, hydrobromic acid and hydrogen peroxide; (2) putting the indium phosphide slice into the polishing solution for chemical polishing etching, and after the chemical polishing etching is finished, taking out the indium phosphide slice, cleaning the indium phosphide slice with water and drying the indium phosphide slice; (3) preparing a dislocation etching solution which is composed of phosphoric acid and hydrobromic acid; and (4) putting the slice dried in the step (2) into the dislocation etching solution for etching, after the etching is finished, taking out the slice, washing the slice with water and drying the slice, and then measuring the dislocation density of the slice by use of a microscope. The dislocation measurement method is capable of quickly measuring the dislocation density of crystals, is simple in operation process, is economic and efficient, and cannot be affected by the shapes of the crystals.

Description

technical field [0001] The invention relates to the technical field of semiconductor crystal materials, in particular to the technical field of measuring the dislocation density of cutting discs. Background technique [0002] Indium phosphide (InP) is an extremely important III-V semiconductor material. Compared with silicon and gallium arsenide, it has higher breakdown electric field, higher average electron drift velocity under high field, and extremely The characteristics of high electro-optical conversion efficiency and high radiation resistance make it widely used in many high-tech fields such as terahertz, optical communication, microwave, millimeter wave devices, and radiation-resistant solar cells, such as InP-based laser diodes, light-emitting diodes , photodetectors, transistors and other devices. [0003] A dislocation is a microscopic defect in a crystal. In semiconductor crystal materials, due to the change of the lattice structure around the dislocation line,...

Claims

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Application Information

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IPC IPC(8): G01N1/32G01N21/84
Inventor 王书杰孙聂枫高琳洁李晓兰王阳邵会民史艳磊付莉杰刘新辉刘惠生孙同年
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP