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N type PERC crystalline silicon solar cell and preparation method thereof

A technology of solar cells and crystalline silicon, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as scarcity of technical solutions, and achieve the effects of improving technical assurance, convenient operation, and improving absorption

Inactive Publication Date: 2014-12-17
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the back passivation battery technology is relatively mature for P-type batteries, but the technical solutions for industrial production of N-type batteries are still relatively scarce.

Method used

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  • N type PERC crystalline silicon solar cell and preparation method thereof

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Effect test

Embodiment 1

[0043] In this embodiment, a 156mm N-type single crystal silicon wafer is used as the base material to remove damage, texture, and clean the N-type silicon wafer; a P-type emitter junction is formed by using tubular boron diffusion, and the diffusion resistance is controlled at 80 ohm / sq. The naturally formed borosilicate glass is used as the front mask of the battery to achieve the purpose of removing the reflective junction and polishing on the back of the silicon wafer. At the same time, use 5% hydrofluoric acid solution to remove the borosilicate glass on the textured surface of the silicon wafer Wash with 1% hydrofluoric acid solution. An aluminum oxide passivation film with a thickness of 10nm was grown on the front of the silicon wafer, and a silicon nitride film with a thickness of 120nm was grown on the back of the silicon wafer by PECVD. 68nm silicon nitride anti-reflection film, after the growth of the dielectric film, print silver-aluminum paste grid lines on the f...

Embodiment 2

[0047] In this embodiment, a 156mm N-type single crystal silicon wafer is used as the base material to remove damage, texture, and clean the N-type silicon wafer; a P-type emitter junction is formed by using tubular boron diffusion, and the diffusion resistance is controlled at 45 ohm / sq. The naturally formed borosilicate glass is used as the front mask of the battery to achieve the purpose of removing the reflective junction and polishing on the back of the silicon wafer. At the same time, use 5% hydrofluoric acid solution to remove the borosilicate glass on the textured surface of the silicon wafer Wash with 1% hydrofluoric acid solution. An aluminum oxide passivation film with a thickness of 2nm is grown on the front of the silicon wafer, and a silicon nitride film with a thickness of 200nm is grown on the back of the silicon wafer by PECVD. 90nm silicon nitride anti-reflection film, after the growth of the dielectric film, print silver-aluminum paste grid lines on the fron...

Embodiment 3

[0051] In this embodiment, a 156mm N-type single crystal silicon wafer is used as the base material to remove damage, texture, and clean the N-type silicon wafer; a P-type emitter junction is formed by using tubular boron diffusion, and the diffusion resistance is controlled at 140 ohm / sq. The naturally formed borosilicate glass is used as the front mask of the battery to achieve the purpose of removing the reflective junction and polishing on the back of the silicon wafer. At the same time, use 5% hydrofluoric acid solution to remove the borosilicate glass on the textured surface of the silicon wafer Wash with 1% hydrofluoric acid solution. An aluminum oxide passivation film with a thickness of 40nm was grown on the front of the silicon wafer, and a silicon nitride film with a thickness of 50nm was grown on the back of the silicon wafer by PECVD. 50nm silicon nitride anti-reflection film, after the growth of the dielectric film, print silver-aluminum paste grid lines on the f...

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Abstract

The invention discloses an N type PERC crystalline silicon solar cell and preparation method thereof, the N type silicon sheet having a specific resistance of 0.5-12 ohm*cm is used as the base body, and the front side is provided with a boron diffusion P type emitter junction and silk-screen printing argentalium electrodes, and the reverse side is orderly provided with a silicon nitride passive film and an evaporation aluminum layer from the upper part to the lower part, the silicon nitride passive film is provided with the dot matrix or line matrix shape hollow, the evaporation aluminum layer contacts the silicon base body through the silicon nitride passive film. The back passivation is combined with the metallized area local contact, and the efficiency is high and the cost is low, the preparation method is simple, the operation is convenient and the economic benefit is good.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and in particular relates to an N-type PERC crystalline silicon solar cell and a preparation method thereof. Background technique [0002] Compared with P-type silicon wafers, N-type silicon wafers have a higher minority carrier lifetime and are less sensitive to metal impurities. In addition, boron atoms that are not artificially doped in the matrix will not form boron-oxygen recombination pairs. , so N-type cells have no light-induced attenuation. The above reasons make N-type silicon wafers the darling of crystalline silicon cells in colleges and universities, but there are advantages and disadvantages. The process of N-type silicon wafers is relatively complicated and the preparation cost is relatively high. It is still a P-type battery. [0003] At present, the back passivation battery technology is relatively mature for P-type batteries, but the technical solutions for industrial pro...

Claims

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Application Information

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IPC IPC(8): H01L31/072H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1868Y02E10/50Y02P70/50
Inventor 夏正月高艳涛崔会英钱亮何锐张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
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