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Process for continuously producing micron-sized gallium oxide powder

A gallium oxide, micron-scale technology, applied in inorganic chemistry, chemical instruments and methods, gallium/indium/thallium compounds, etc., can solve the problems of inability to achieve full automation, large environmental pollution, complicated operations, etc., and achieve full automation and continuous. The effect of production, low labor intensity and high purity

Active Publication Date: 2014-12-24
ZHUZHOU KENENG NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sol-gel method also needs to use nitric acid, which is dangerous in operation, causes great environmental pollution, and is complicated in operation and low in yield.
[0009] The biggest flaw is that none of the above three methods can achieve full automation

Method used

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  • Process for continuously producing micron-sized gallium oxide powder
  • Process for continuously producing micron-sized gallium oxide powder
  • Process for continuously producing micron-sized gallium oxide powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] When the micron-sized gallium oxide powder of gallium metal is continuously produced, the gallium metal is heated to 240°C by the electric arc furnace, and the molten gallium metal flows out from the metal liquid hole; at this time, the air compressor is turned on to deliver preheated air at 250°C, and the The preheated air is ejected from the four air holes at the same time at a pressure of 7MPa. The air injection angle is along the axis of the metal liquid hole at 30°. The liquid metal gallium is impacted and sheared by the air flow at the intersection of the air flow, and the oxidation reaction is carried out at the same time, forming an average The particle size is 2.673 μm, and the particle size distribution is less than 10 μm, accounting for 99.70%, and less than 5 μm, accounting for 85.88% of gallium oxide powder; the obtained gallium oxide powder enters cyclone separator I and cyclone separator II in sequence with the airflow for classification, and in the cyclone...

Embodiment 2

[0027] When the micron-sized gallium oxide powder of gallium metal is continuously produced, the gallium metal is heated to 250°C by the electric arc furnace, and the molten gallium metal flows out from the metal liquid hole; at this time, the air compressor is turned on to deliver preheated air at 260°C, and the The preheated air is ejected from the four air holes at the same time at a pressure of 6MPa. The air injection angle is along the axis of the metal liquid hole at 30°. The liquid metal gallium is impacted and sheared by the air flow at the intersection of the air flow, and the oxidation reaction is carried out at the same time, forming an average The particle size is 2.875 μm, and the particle size distribution is less than 10 μm, accounting for 99.52%, and less than 5 μm, accounting for 84.62% of gallium oxide powder; the obtained gallium oxide powder enters cyclone separator I and cyclone separator II in sequence with the airflow for classification, and in the cyclone...

Embodiment 3

[0029]When the micron-sized gallium oxide powder of gallium metal is continuously produced, the gallium metal is heated to 200°C by the electric arc furnace, and the molten gallium metal flows out from the metal liquid hole; at this time, the air compressor is turned on to deliver preheated air at 220°C, and the The preheated air is ejected from the four air holes at the same time at a pressure of 5 MPa. The air injection angle is along the axis of the metal liquid hole at 40°. The liquid metal gallium is impacted and sheared by the air flow at the intersection of the air flow, and the oxidation reaction is carried out at the same time, forming an average The particle size is 2.985 μm, and the particle size distribution is less than 10 μm, accounting for 99.50%, and less than 5 μm, accounting for 83.79% of gallium oxide powder; the obtained gallium oxide powder enters cyclone separator I and cyclone separator II in sequence with the airflow for classification, and in the cyclone...

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Abstract

The invention discloses a process for continuously producing micron-sized gallium oxide powder. According to the process, micron-sized gallium oxide powder is prepared by a full-automatic gallium oxide producing device; the full-automatic gallium oxide producing device comprises a reactor, cyclone separators, collectors and automatic packing machines; when micron-sized gallium oxide powder is continuously produced by metal gallium, the metal gallium flows out of a molten metal hole after heated and melted by an electric arc furnace; preheated air is sprayed out from four air flow holes simultaneously, liquid metal gallium is impacted and sheared in the air flow intersection position, an oxidation reaction is performed simultaneously, and the micron-sized gallium oxide powder is formed; and the micron-sized gallium oxide powder sequentially enters a cyclone separator I and a cyclone separator II for classification with air flow and then is collected in the collectors, and continuous production of the micron-sized gallium oxide powder prepared by the metal gallium is completed. The process completely realizes full-automatic continuous production of micron-sized gallium oxide, the purity of the prepared gallium oxide is high, the grain diameter is small, the distribution range is small, gallium oxide with different grain diameters is obtained through classification and meet different use demands, and the process is environment-friendly and low in cost.

Description

technical field [0001] The invention relates to a process for continuously producing micron-sized gallium oxide powder, which belongs to the technical field of gallium oxide powder preparation. Background technique [0002] 1. The use of gallium oxide: Gallium oxide is a transparent conductive oxide semiconductor material, which has broad application prospects in optoelectronic devices. It is mainly used in the production of luminescent materials, crystal materials, catalysts and other products. [0003] IGZO (Indium Gallium Zinc Oxide) is the abbreviation of Indium Gallium Zinc Oxide. It is a thin film transistor technology, which refers to a layer of metal oxide on the active layer of TFT-LCD. IGZO material is a channel layer material used in the new generation of thin film transistor technology, and is a kind of metal oxide (Oxied) panel technology. [0004] The band gap of IGZO is about 3.5eV, and it is an N-type semiconductor material. In 2 o 3 In can form 5S electr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00
CPCY02P20/129
Inventor 赵科湘
Owner ZHUZHOU KENENG NEW MATERIAL CO LTD
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