Field effect diode and manufacturing method thereof

Abstract

The invention discloses a field effect diode and a manufacturing method of the field effect diode. The field effect diode sequentially comprises a substrate, a nucleating layer, a buffering layer, a back barrier layer, a channel layer, a first barrier layer and a second barrier layer. A groove, an anode and a cathode are arranged on the second barrier layer. The cathode is an ohmic contact electrode. The anode is of a composite structure and is composed of the ohmic contact electrode and a schottky electrode which is located in the groove and is connected with the ohmic contact electrode in a short circuit mode. The first barrier layer and the back barrier layer have similar constituent content, the second barrier layer is different from the first barrier layer in constituent content, and the lattice constant of the second barrier is smaller than that of the first barrier layer. The field effect diode has smaller positive conductive voltage drop, smaller reverse leakage current and larger breakdown voltage.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a field effect diode based on energy band engineering, low forward conduction voltage drop, low reverse leakage current and high breakdown voltage and a manufacturing method thereof. Background technique [0002] In modern society, power electronics technology in many fields, such as high-voltage power supply, power conversion, factory automation, and motor vehicle energy distribution management, continues to develop. Power semiconductor devices are usually used as switches or rectifiers in circuit systems and are an important part of power electronics technology. Power devices determine the consumption and efficiency of the circuit system, and play a very important role in energy saving and consumption reduction. In recent years, GaN Schottky diodes with high frequency, high power density, and low power consumption have aroused great interest in the industry due to their...

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Problems solved by technology

But this also increases the reverse leakage current of the Schottky diode

Moreover, the lower barrier height will degrade the electrical performance of the Schottky diode at high temperature, such as the breakdown voltage becomes smaller

Using a higher Schottky barrier height helps reduce reverse leakage current, but results in a forward voltage drop (V F ) is larger, which increases the on-state loss

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