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A method for adjusting phase transition temperature of vanadium dioxide thin film

A vanadium dioxide and phase transition temperature technology, applied in the field of functional materials, can solve the problems of complex operation, small adjustment range, poor process repeatability, etc., and achieve the effects of low phase transition temperature, large adjustment range and low cost

Active Publication Date: 2016-05-18
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the doping ratio of vanadium dioxide film cannot be adjusted flexibly. For example, in the process of magnetron sputtering, the doping ratio has been fixed in the target, so the ratio of sputtering materials is also fixed, and the doping ratio cannot be flexibly changed; On the one hand, the preparation process of vanadium dioxide thin film is costly, complicated to operate, and has high requirements on the system, because doping is a very complicated process. To prepare doped vanadium dioxide thin film by magnetron sputtering, the thin film must be lined. Bottom heating has high requirements on the system, and the existing industrial coating line cannot realize substrate heating and coating, so this method of adjusting the phase transition temperature is temporarily difficult to apply to industrial production
[0006] In addition, the phase transition temperature of vanadium dioxide film can also be changed by changing the stress and grain size, but the adjustment range is small, and so far, these methods have not achieved continuous adjustment, and the process repeatability is poor, so it cannot be used in production

Method used

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  • A method for adjusting phase transition temperature of vanadium dioxide thin film
  • A method for adjusting phase transition temperature of vanadium dioxide thin film
  • A method for adjusting phase transition temperature of vanadium dioxide thin film

Examples

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Embodiment 1

[0035] In this example, sapphire is used as a substrate, and a metal vanadium film is plated on its surface, then annealed in a vacuum tube annealing furnace to form a vanadium dioxide film, and then the performance of the film is tested. The specific implementation steps are as follows:

[0036] 1. Substrate cleaning. Put the sapphire into the alcohol and ultrasonic for 10 minutes to remove the oil stain on the surface of the substrate. After the ultrasonic cleaning, take it out quickly, dry it with nitrogen, and put it into the coating chamber.

[0037] 2. Plating 50nm metal vanadium film. The vanadium target used in the coating system is a 320×140mm planar target with a purity of 99.99%. The sputtering process gas is argon with a purity of 99.999%. System base vacuum is 1×10 -3 Pa. Adjust the argon flow rate to 50sccm during sputtering coating, and the system pressure is 0.22Pa at this time; set the sputtering power to 500W, and the sputtering voltage is 338V at this t...

Embodiment 2

[0046] In this example, glass is used as a substrate, and a metal vanadium film is plated on its surface, and then annealed in a vacuum tube annealing furnace to form a vanadium dioxide film, and the performance of the film is tested. The specific implementation steps are as follows:

[0047] 1. Substrate cleaning. Put the sapphire into the alcohol and ultrasonic for 10 minutes to remove the oil stain on the surface of the substrate. After the ultrasonic cleaning, take it out quickly, dry it with nitrogen, and put it into the coating chamber.

[0048] 2. Plating 50nm metal vanadium film. The vanadium target used in the coating system is a 320×140mm planar target with a purity of 99.99%. The sputtering process gas is argon with a purity of 99.999%. The basic vacuum of the system is 1×10-3Pa. Adjust the argon flow rate to 50sccm during sputtering coating, and the system pressure is 0.22Pa at this time; set the sputtering power to 500W, and the sputtering voltage is 338V at t...

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Abstract

The invention provides a method for regulating a phase-transition temperature of a vanadium dioxide film. According to the method, a metal vanadium or low-valence vanadium oxide film is subjected to oxygen annealing in vacuum; and the phase-transition temperature of the produced vanadium dioxide film is regulated by changing oxygen partial pressure in the annealing process. The manner for regulating the phase transition is not depended on a substrate, can be implemented on a crystal substrate as well as on a non-crystal substrate, and is a very simple and efficient method for regulating the phase-transition temperature of the vanadium dioxide film. The method has high flexibility, is simple to operate and low in cost, and can be compatible to or co-used with other methods for regulating the phase-transition temperature.

Description

technical field [0001] The invention relates to the field of functional materials, and relates to a method for adjusting the phase transition temperature of a vanadium dioxide thin film, specifically referring to a method for adjusting the phase transition temperature of vanadium dioxide by controlling the atmosphere in an annealing process. Background technique [0002] Vanadium dioxide undergoes a metal-semiconductor transition around 68°C, which is a structural phase transition process. When it is lower than 68°C, the vanadium dioxide crystal has a monoclinic structure, poor conductivity, and high infrared transmittance; while higher than 68°C At 68°C, the vanadium dioxide crystal has a tetragonal structure, good electrical conductivity, and low infrared transmittance. Because the optical and electrical properties of vanadium dioxide will change greatly before and after the phase transition, and the phase transition temperature is near room temperature, it can be used in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/50C03C17/23
Inventor 王少伟刘星星陆卫俞立明陈效双
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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