Preparation method for adjusting element ratio of Cu2ZnSnS4 film through two times of sulfuration

A copper-zinc-tin-sulfur, secondary vulcanization technology, used in electrical components, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as high tin content

Inactive Publication Date: 2015-01-14
JILIN INST OF CHEM TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to overcome the problem that the current method of one-time vulcanization cannot completely solve the problem of more tin content

Method used

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  • Preparation method for adjusting element ratio of Cu2ZnSnS4 film through two times of sulfuration
  • Preparation method for adjusting element ratio of Cu2ZnSnS4 film through two times of sulfuration
  • Preparation method for adjusting element ratio of Cu2ZnSnS4 film through two times of sulfuration

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Embodiment

[0013] Mix the cuprous sulfide, zinc sulfide, and tin disulfide in a molar ratio of 1:1:1, and grind with an agate mortar for 4 hours. The mixed powder is subjected to high temperature hot pressing at a temperature of 700 o C. Obtain a copper-zinc-tin-sulfur single target with a chemical element ratio of 2:1:1:4, and use radio frequency magnetron sputtering to sputter a copper-zinc-tin-sulfur film on soda lime glass. The process conditions are: substrate temperature : 500 o C, Argon flow rate: 30ccm, sputtering power: 60W, sputtering pressure: 0.1Pa, vacuum degree before sputtering: 7×10 -4 Pa. Obtain 4 copper-zinc-tin-sulfur prefabricated films under the same sputtering conditions and denoted by (a), (b), (c), (d) respectively. Put the films (b), (c), (d) into a quartz tube containing 10 mg of sulfur powder, and vacuum seal the tube. Using rapid annealing furnace, first put the quartz tube with thin film (b) in the furnace, and quickly heat up to 550 o At C, keep for 10min (hea...

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Abstract

The invention relates to a preparation method for adjusting the chemical ratio of a Cu2ZnSnS4 film through two times of sulfuration heat processing. The preparation method is characterized in that magnetron sputtering is carried out on a Cu2ZnSnS4 prefabricated film through the single Cu2ZnSnS4 target, two times of sulfuration heat processing is carried out on the prefabricated film, and the high-quality Cu2ZnSnS4 film poor in copper and rich in zinc is obtained. The corresponding band gap is changed from 1.42eV to 1.52eV. The preparation method for adjusting the chemical ratio of the Cu2ZnSnS4 film through two times of sulfuration heat processing is simple in process, low in cost, convenient to operate, high in repeatability and favorable for industrialization development of stacked solar cells with Cu2ZnSnS4 absorption layers.

Description

Technical field [0001] The invention relates to a preparation method for adjusting the element ratio of a copper-zinc-tin-sulfur film through secondary sulfidation. A copper-zinc-tin-sulfur single target is used to prepare a copper-zinc-tin-sulfur prefabricated film by magnetron sputtering, and then the prefabricated film is subjected to secondary sulfidation heat treatment to adjust The relative content of Cu, Zn, Sn and S in the copper-zinc-tin-sulfur film is a copper-poor and zinc-rich copper-zinc-tin-sulfur film, which belongs to the field of thin-film solar cell materials. Background technique [0002] Copper, zinc, tin and sulfur is a direct band gap compound semiconductor with an optical band gap of about 1.5 eV, and the absorption coefficient on the high energy side of the absorption edge is as high as 10 4 cm -1 , Is used to prepare the absorber layer of thin-film solar cells. Copper-zinc-tin-sulfur is used as the absorption layer, and its element ratio is an important ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1828Y02E10/543Y02P70/50
Inventor 孟磊徐娜陈哲
Owner JILIN INST OF CHEM TECH
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