A kind of preparation method of ultrathin silicon carbide material
An ultra-thin silicon carbide and two-dimensional material technology, which is applied in the field of preparation of ultra-thin silicon carbide materials, can solve the problems such as no one has obtained a single-layer silicon carbide structure, and achieves the effect of a simple preparation process.
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Embodiment 1
[0017] 1) Mix silicon powder and graphene powder and place them in the reaction furnace tube, the molar ratio of silicon powder and graphene powder is 100:1;
[0018] 2) Raise the temperature to 600°C at a rate of 1°C / min, and evacuate the reaction furnace tube to a vacuum degree of 10 -5 Pa, then feed argon, and react for 10 minutes under an argon atmosphere;
[0019] 3) Cool down to room temperature at a rate of 1°C / min, and take out the sample to obtain an ultra-thin silicon carbide material. The morphology of the obtained ultra-thin silicon carbide under the electron microscope is as follows figure 1 As shown, its Raman spectrum is shown in figure 2 As shown, the atomic force microscope image is given by image 3 shown by figure 2 It can be seen that there is an obvious 796cm in the Raman spectrum of the reaction product -1 The peak position of , corresponding to the Raman peak position of silicon carbide, is given by image 3 It can be seen that the thickness of ul...
Embodiment 2
[0021] 1) Place silica powder and graphene powder in the reaction furnace tube, the molar ratio of silica powder and graphene powder is 1:10, and the distance between them is 10cm;
[0022] 2) Raise the temperature to 1200°C at a rate of 100°C / min, and evacuate the reactor tube to a vacuum degree of 10 -2 Pa, then pass into nitrogen, react 200min under nitrogen atmosphere;
[0023] 3) Cool down to room temperature at a rate of 100°C / min, take out the sample, and obtain an ultra-thin silicon carbide material with a thickness of 0.4nm.
Embodiment 3
[0025] 1) Place silicon monoxide powder and graphite in the reaction furnace tube, the molar ratio of silicon monoxide powder and graphite is 1:60, and the distance between them is 60cm;
[0026] 2) Raise the temperature to 1600°C at a rate of 300°C / min, and evacuate the reactor tube to a vacuum degree of 10 -5 Pa, then feed argon and hydrogen mixed gas, the mixing volume ratio is 9:1; react under argon and hydrogen atmosphere for 1880min;
[0027] 3) Cool to room temperature at a rate of 400°C / min, take out the sample, and obtain an ultra-thin silicon carbide material with a thickness of 1.2nm.
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