Main gate-free, high-efficiency and back-contact solar battery backplane, assembly and preparation process

Abstract

The invention belongs to the solar battery field and relates to a main gate-free, high-efficiency and back-contact solar battery backplane, assembly and preparation process. The main gate-free, high-efficiency and back-contact solar battery backplane includes an electrical connection layer and a base layer which are distributed from top to bottom, wherein the electrical connection layer is connected with the base layer through an adhesive; the electrical connection layer includes conductive wires and insulated wires; the conductive wires and the insulated wires are braided so as to form a net structure; and the insulated wires are braided between adjacent conductive wires. With the main gate-free, high-efficiency and back-contact solar battery backplane, assembly and preparation process provided by the invention adopted, short circuiting of P electrodes and N electrodes can be effectively prevented. The main gate-free, high-efficiency and back-contact solar battery backplane, assembly and preparation process of the invention have the advantages of low cost, high efficiency, high hidden crack resistance and high stability.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a busbar-free, high-efficiency back-contact solar cell backplane, components and a preparation process. Background technique [0002] Energy is the material basis of human activities. With the continuous development and progress of human society, the demand for energy is increasing day by day. Traditional fossil energy is non-renewable energy and it is difficult to continue to meet the needs of social development. Therefore, research and utilization of new energy and renewable sources have become increasingly popular in countries around the world in recent years. Among them, solar power generation technology has the advantages of directly converting sunlight into electricity, simple use, environmental protection and pollution-free, high energy utilization rate, etc., and has received widespread attention. Solar power generation uses large-area P-N junction diodes to generate photo-gen...

AI Technical Summary

Problems solved by technology

This process has the following defects: 1. The composite conductive backplane used is a composite conductive metal foil in the backplane, usually copper foil, and the copper foil needs to be laser etched or chemically etched

Since laser etching is still operable for simple patterns, the etching speed for complex patterns is slow and the production efficiency is low. In addition to the need to prepare complex and corrosion-resistant masks in advance, chemical etching also has environmental pollution and corrosive liquids on polymer substrates. material corrosion

Therefore, the manufacturing process of the conductive backplane manufactured in this way is complicated and the cost is extremely high.

2. It is necessary to punch the packaging material of the back layer of the solar cell so that the conductive adhesive can penetrate the packaging material. Since the packaging material is usually a viscoelastic body, it is extremely difficult to accurately punch holes

3. Accurate dispensing equipment is required to coat the conductive glue on the corresponding position of the back plate. It can also be operated for batteries with fewer back contacts such as MWT, and for back contact batteries with small and large number of back contacts such as IBC. Simply not possible with dispensing equipment

[0010] Since the current invention in this field uses thin grid lines for current collection, it can still be used on 5-inch cells, but it will encounter series resistance rise and filling on 6-inch or larger silicon chips that are generally popular in the prior art factors such as the decline, leading to a serious reduction in the power of the manufactured components

The IBC battery in the prior art can also screen print a relatively wide silver paste grid line between adjacent P or N emitters to reduce the series resistance, but the cost increases sharply due to the increase in the amount of silver used. At the same time, the wide gate line will also cause the insulation effect between P-N to deteriorate, and the problem of easy leakage

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