Complementary tunneling field effect transistor and manufacturing method thereof

Abstract

The embodiment of the invention provides a complementary tunneling field effect transistor and a manufacturing method thereof, and relates to the technical field of semiconductors. The complementary tunneling field effect transistor is able to improve the tunneling efficiency of charge carrier, so as to improve the performance of the complementary tunneling field effect transistor. The transistor comprises a first drain area, a first source area, a first channel, a second channel, a second source area, a second drain area, first extension layers, second extension layers, a first gate stacking layer and a second gate stacking layer, wherein the first drain area and the first source area both comprise first inclusions; the first channel is arranged on the first drain area; the second channel is arranged on the first source area; the second source area is arranged on the first channel; the second drain area is arranged on the second channel; the second source area and the second drain area both comprise second inclusions; the first extension layers are arranged on the first drain area and the second source area; the second extension layers are arranged on the second drain area and the first source area; the first gate stacking layer is arranged on the first extension layer; the second gate stacking layer is arranged on the second extension layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a complementary tunneling field effect transistor and a manufacturing method thereof. Background technique [0002] With the evolution of the transistor manufacturing process, the size of the transistor continues to shrink. However, in the process of shrinking the size of the transistor to close to the physical limit, the transistor also faces many problems, such as serious short-channel effect, large leakage current, and high power density. . Aiming at these problems, various solutions have been proposed in the industry. Among them, TFET (Tunnel Field Effect Transistor, Tunneling Field Effect Transistor) is not affected by MOSFET (Metal Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor) sub- Advantages such as limitation of threshold swing have received widespread attention. [0003] Existing Tunneling Field Effect Transisto...

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Problems solved by technology

[0004] Since the existing technology uses ion implantation to dope the source region and drain region of the tunneling field effect transistor with impurities, but the impurity concentration distribution formed by the ion implantation process in the source region and the drain region is generally a Gaussian distribution, so the ion implantation process is used When the ions are distributed unevenly, it is difficult to form a tunnel junction with sudden doping, so under the action of a certain gate electric field, the tunneling efficiency of carriers is relatively low.

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