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Ingaas quantum dot solar cell and manufacturing method thereof

A technology of solar cells and manufacturing methods, applied in the field of solar cells, can solve the problems of insufficient efficiency of solar cells, and achieve the effects of improving conversion efficiency and long life

Active Publication Date: 2016-06-15
SUZHOU JUZHEN PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] For this reason, the technical problem to be solved by the present invention is that the efficiency of the solar cell is not high enough due to the low matching degree of the absorption spectrum and the solar spectrum of the existing quantum dot solar cell, thereby proposing a method by optimizing the structure of each layer of the solar cell, especially InGaAs quantum dot superlattice structure, material and its components, growth parameters, etc. to obtain high-density, multi-stacked and less defect InGaAs quantum dot solar cell epitaxial wafers, so as to produce high-efficiency InGaAs quantum dot solar cells

Method used

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  • Ingaas quantum dot solar cell and manufacturing method thereof
  • Ingaas quantum dot solar cell and manufacturing method thereof
  • Ingaas quantum dot solar cell and manufacturing method thereof

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Embodiment 1

[0037] Such as Figure 1-2 As shown, the present embodiment provides a method for manufacturing an InGaAs quantum dot solar cell, comprising the following steps:

[0038] Step S1: Using the epitaxial growth method to sequentially epitaxially grow the buffer layer 6, the base electrode 5, the InGaAs quantum dot superlattice structure 4, the emitter electrode 3, the window layer 2 and the contact layer 1, and then fabricate the InGaAs quantum dots Solar cell epitaxial wafer, InGaAs quantum dot superlattice structure 4 includes at least one layer of In x Ga 1-x As quantum dot layer, and set in In x Ga 1-x The spacer layer between As quantum dot layers, where, In x Ga 1-x The In composition in the As quantum dot layer is 0.0≤x≤1.0. Specifically, In x Ga 1-x In the As quantum dot layer, the In composition is 0.4≤x≤1.0, preferably, 0.5≤x≤1.0; In x Ga 1-x The deposition rate of the As quantum dot layer is 0.01-1.0 monolayer per second, preferably 0.05-0.5 monolayer per seco...

Embodiment 2

[0048] Such as figure 2 As shown, the present embodiment provides an InGaAs quantum dot solar cell, including a plurality of battery cells connected in series and / or in parallel, and the battery cells sequentially include a back electrode 8, a GaAs substrate 7, a buffer layer 6, a substrate from top to bottom. Pole 5, InGaAs quantum dot superlattice structure 4, emitter 3, window layer 2, contact layer 1 and upper electrode 9, InGaAs quantum dot superlattice structure 4 includes at least one layer of In x Ga 1-x As quantum dot layer, and set in In x Ga 1-x Spacer layers between As quantum dot layers. Among them, In x Ga 1-x In of the As quantum dot layer x Ga 1-x The In composition in As is 0.4≤x≤1.0, preferably 0.5≤x≤1.0. In x Ga 1-x The thickness of the As quantum dot layer is 1.8-10.0 monolayer, preferably 1.8-6.0 monolayer. The spacer layer can be GaAs material, GaAlAs material, GaP material, GaAsP material, GaInP material, GaAlInP material or GaAlAsP material,...

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Abstract

The invention discloses an InGaAs quantum dot solar cell and a fabrication method thereof. The InGaAs quantum dot solar cell comprises performing epitaxial growth on a buffer layer, a base, an InGaAs quantum dot superlattice, an emitter, a window layer and a contact layer successively on a GaAs substrate through an epitaxial growth method and manufacturing an InGaAs quantum dot solar cell epitaxial wafer. The InGaAs quantum dot superlattice comprises at least one In*Ga1-*As quantum dot layer and a separation layer arranged between the In*Ga1-*As quantum dot layers. According to the InGaAs quantum dot solar cell and the fabrication method, the density, the size and the band gap of the quantum dot structure are adjusted by adjusting the structure, materials, material components and growth parameters of the InGaAs quantum dot superlattice, carriers on the discrete level in the quantum dot structure have a long service life, and two or more photons can be absorbed in a cascading mode to manufacture the efficient InGaAs quantum dot solar cell.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an InGaAs quantum dot solar cell and a manufacturing method thereof. Background technique [0002] Traditional energy represented by coal, oil and natural gas will cause serious environmental pollution. Therefore, renewable clean energy represented by the solar photovoltaic industry has received widespread attention and achieved rapid development. The conversion efficiencies of monocrystalline silicon and polycrystalline silicon solar cell modules, which currently dominate the photovoltaic market, are around 18% and 15%, respectively. Since silicon materials and gallium arsenide (GaAs) are indirect bandgap and direct bandgap semiconductor materials respectively, the theoretical photoelectric conversion efficiency (23%) of silicon solar cells is much lower than that of gallium arsenide solar cells, among which single-junction gallium arsenide The theoretical efficiency of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0304H01L31/0392H01L31/18
CPCH01L31/03046H01L31/03923H01L31/184Y02E10/541Y02E10/544Y02P70/50
Inventor 杨晓杰
Owner SUZHOU JUZHEN PHOTOELECTRIC