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Patterned substrate preparation method and epitaxial wafer production method

A patterned substrate and patterned technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low light reflectivity, improve light reflectivity, reduce defects and dislocations, and improve light output. efficiency effect

Active Publication Date: 2018-01-05
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem in the prior art that light is easily transmitted at the interface of the sapphire substrate and the reflectivity of light is not high, the embodiment of the present invention provides a method for preparing a patterned substrate and a method for manufacturing an epitaxial wafer

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  • Patterned substrate preparation method and epitaxial wafer production method
  • Patterned substrate preparation method and epitaxial wafer production method
  • Patterned substrate preparation method and epitaxial wafer production method

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Embodiment 1

[0042] The embodiment of the present invention provides a method for preparing a patterned substrate, see figure 1 , The method includes:

[0043] Step 101: Deposit a silicon dioxide layer on a sapphire substrate.

[0044] In this embodiment, depositing a silicon dioxide layer on a sapphire substrate includes:

[0045] A plasma-enhanced chemical vapor deposition method or a sol-gel method is used to deposit a silicon dioxide layer on the sapphire substrate.

[0046] Such as figure 2 As shown, a silicon dioxide layer 12 is deposited on the sapphire substrate 11.

[0047] Step 102: Use a photoresist mask and an etching process to etch the silicon dioxide layer until a part of the sapphire substrate is exposed to form a plurality of protrusions. The protrusions have a mesa structure and a photoresist mask is left on the top surface of the protrusions membrane.

[0048] Specifically, the protrusion may be one or more of a truncated cone structure, an elliptical cone structure, and a prism ...

Embodiment 2

[0066] The embodiment of the present invention provides a method for manufacturing an epitaxial wafer, see Figure 7 , The method includes:

[0067] Step 201: Prepare a patterned substrate according to the method in the first embodiment.

[0068] Step 202: sequentially growing an n-type gallium nitride layer, a multiple quantum well layer and a p-type gallium nitride layer on the patterned substrate to form an epitaxial wafer.

[0069] Specifically, the side epitaxial growth method is used to sequentially grow an n-type gallium nitride layer, a multiple quantum well layer, and a p-type gallium nitride layer on a patterned substrate to form an epitaxial wafer.

[0070] In the embodiment of the present invention, a silicon dioxide layer is deposited on a sapphire substrate, a plurality of protrusions are etched using a photoresist mask and an etching process, and an aluminum nitride layer is sputtered on the surface of the sapphire substrate. The protrusions are removed by wet etching t...

Embodiment 3

[0072] The embodiment of the present invention provides a patterned substrate, see Figure 8 , The substrate includes:

[0073] A sapphire substrate 301 and an aluminum nitride layer 302 disposed on the sapphire substrate 301. A plurality of hollow structures 302a are provided in the aluminum nitride layer 302, and the hollow structures 302a are mesa structures.

[0074] Specifically, the hollow structure 302a may be one or more of a truncated cone structure, an elliptical cone structure, and a prism cone structure.

[0075] Further, the radius or width of the top surface of the hollow structure 302a is 0.05-0.5um, the radius or width of the bottom surface of the hollow structure 302a is 0.5-10um, and the height of the hollow structure 302a is 0.5-5um. The hollow structure of this size has an obvious effect on reflectivity and can maximize the efficiency of LED light.

[0076] In this embodiment, a plurality of hollow structures 302a are arranged in a matrix to form a periodic pattern...

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Abstract

The invention discloses a method for preparing a patterned substrate and an epitaxial wafer, belonging to the field of light-emitting diodes. The method includes: depositing a silicon dioxide layer on a sapphire substrate; etching the silicon dioxide layer by using a photoresist mask and an etching process until a part of the sapphire substrate is exposed to form a plurality of protrusions; The aluminum nitride layer is sputtered on the raised surface; the photoresist mask on the top surface of the raised surface and the sputtered aluminum nitride on the photoresist mask are removed; and the raised surface is removed by wet etching. When growing a gallium nitride layer on a patterned substrate, the hollow structure becomes an air gap, the refractive index of the gallium nitride material is 2.5, the refractive index of the aluminum nitride material is 2.0, and air is the material with the lowest refractive index, so that the light in the nitrogen The interfaces of gallium nitride, aluminum nitride, and air sapphire substrates are less likely to be transmitted and more likely to be reflected, which can produce higher reflectivity, thereby improving the light extraction efficiency of the light-emitting diode.

Description

Technical field [0001] The invention relates to the field of Light Emitting Diode (Light Emitting Diode, "LED" for short), in particular to a method for preparing a patterned substrate and a method for preparing an epitaxial wafer. Background technique [0002] The patterned sapphire substrate (Patterned Sapphire Substrate, "PSS") technology is currently a relatively mature technical solution in the field of growth of gallium nitride materials on heterogeneous substrates. Among them, the use of PSS technology can better relieve the stress in the sapphire substrate and gallium nitride epitaxial growth, reduce the defect density in the gallium nitride epitaxy, and improve the crystal quality of the epitaxial material. [0003] In the process of implementing the present invention, the inventor found that the prior art has at least the following problems: [0004] When light enters the patterned sapphire substrate from the active layer, since the difference between the refractive index ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/00H01L21/02
CPCH01L33/0066H01L33/0075H01L33/22
Inventor 桂宇畅张建宝
Owner HC SEMITEK CORP
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