Self-aligned double-gate small bandgap semiconductor transistor with high switching ratio and its preparation method
A high switching ratio, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve serious problems such as minority carrier tunneling, achieve high performance, suppress minority carrier reverse tunneling at the drain terminal, and maintain the process cost effect
Active Publication Date: 2017-05-17
PEKING UNIV
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Problems solved by technology
Its working principle is to realize the non-doped MOS operation of the small band gap semiconductor film through the unipolar non-barrier contact between the source and drain electrodes to the small band gap semiconductor material. However, when the device is in the off state, the minority carrier tunneling at the drain terminal is very serious
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[0036] Below, the representative of the small bandgap semiconductor is the semiconducting carbon nanotube film, and the content of the present invention will be described by a specific example about the PMOS of the carbon nanotube film. The example is only as a reference, and the protection scope of the present invention is defined by the claims range prevails.
[0037] The self-aligned double-gate carbon nanotube thin film transistor with high switching ratio of the present invention, such as figure 2 (a), including: insulating substrate (201), semiconductor carbon nanotube film (202), gate dielectric layer (203), main gate structure (main gate electrode (204), main gate electrode top insulating layer ( 205), and sidewall (206)), source electrode (208), drain-auxiliary gate electrode composite structure (209), semiconductor carbon nanotube film (202) and source electrode (208) and drain-auxiliary gate electrode The composite structure (209) sandwiches a wetting interface la...
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The invention discloses a self-aligned double-gate small-gap semiconductor transistor with high on-off ratio and a manufacturing method thereof. According to the transistor, drain bias voltage is fed back to an auxiliary gate, a clamped square barrier is formed around a drain, and reverse tunneling of drain minority carriers can be well inhibited during running under large bias voltage; thus, the on-off ratio can be increased at the premise of keeping high performance of a non-doped small-gap semiconductor top gate device, and bipolarity is evidently inhibited. Meanwhile, the use of a two-step self-aligned process leads to reduction in device size, and the transistor is applicable to large-scale integrations.
Description
technical field [0001] The invention belongs to the field of CMOS (Complementary Metal Oxide Semiconductor) integrated circuit and field effect transistor logic device of display drive circuit with small bandgap semiconductor as the main semiconductor material, and specifically relates to a self-aligned double-gate non-doped with high switching ratio Small bandgap semiconductor transistor structure and fabrication method thereof. Background technique [0002] The ultra-high mobility of small bandgap semiconductor materials makes them have great potential in the field of high-speed integrated circuits, especially binary compound semiconductors such as indium antimonide and indium arsenide are widely used in high-speed radio frequency circuits, and carbon nanotubes , graphene nanobelts and other new nanomaterials have unique advantages in flexible electronics and display driving circuits due to their own flexibility and high light transmittance. Devices with small bandgap sem...
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IPC IPC(8): H01L29/772H01L29/78H01L21/335H01L21/336
CPCH01L29/66484H01L29/66742H01L29/7831H01L29/78645
Inventor 邱晨光张志勇彭练矛
Owner PEKING UNIV