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High-efficiency flexible thin film solar cell manufacturing method

A technology of solar cells and flexible thin films, applied in the field of solar cells, can solve the problems of heavy weight, poor stability, and low conversion efficiency of battery chips, and achieve the effects of high mass-to-power ratio, good material quality, and high conversion efficiency

Active Publication Date: 2015-02-18
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Since the GaInP / GaInAs / Ge triple-junction solar cell is based on a thicker rigid Ge substrate, usually the thickness of the rigid Ge substrate is ≥ 140 μm, the battery chip is heavy and lacks flexibility, which increases the weight and volume of the space vehicle solar panel
However, traditional copper indium gallium selenide, cadmium telluride or amorphous silicon flexible thin film solar cells have not entered the space application market due to low conversion efficiency and poor stability.

Method used

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  • High-efficiency flexible thin film solar cell manufacturing method

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Embodiment 1

[0055] Such as figure 1 As shown, in the single-junction solar cell epitaxial structure disclosed by the present invention, an epitaxial layer 2, an ohmic contact layer 3, and an epitaxial protective layer 4 are sequentially grown on an epitaxial substrate 1. In this embodiment, the epitaxial layer 2 is formed on the epitaxial substrate 1. The battery BSF (back electric field) layer 21 is grown on the battery BSF layer 21, and the battery base area 22, the battery emission area 23 and the battery window layer 24 are grown sequentially on the battery BSF layer 21, and the battery window layer 24 is adjacent to the ohmic contact layer 3.

[0056] During the epitaxial growth process, a GaAs substrate is used as the epitaxial substrate 1 , and the thickness of the epitaxial substrate 1 is 350 μm.

[0057]The material of the battery BSF layer 21 is AlGaAs with a thickness of 50nm. The material of the battery base area 22 and the battery emission area 23 is GaAs III-V compound, the...

Embodiment 2

[0062] Such as Figure 4 As shown, in the solar cell epitaxial structure disclosed by the present invention, the material of the epitaxial substrate 1 is Ge, and the epitaxial layer 2, the ohmic contact layer 3, and the epitaxial protective layer 4 are grown sequentially on the epitaxial substrate 1. In this embodiment, the epitaxial layer 2 is growing the bottom cell base region 25 on the epitaxial substrate 1, growing the bottom cell emitter region 26, the bottom cell window layer 27, the middle bottom cell tunnel junction 28, the middle cell BSF layer 29, middle cell base region 210, middle cell launch region 211, middle cell window layer 212, middle top cell tunnel junction 213, top cell BSF layer 214, top cell base region 215, top cell launch region 216, top cell window layer 217, The top cell window layer 217 is adjacent to the ohmic contact layer 3 .

[0063] The material of the bottom cell base region 25 and the bottom cell emitter region 26 is the growth substrate Ge...

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Abstract

The invention discloses a high-efficiency flexible thin film solar cell manufacturing method. The method includes providing an epitaxial substrate; growing an epitaxial structure on the epitaxial substrate; growing an ohmic contact layer on the epitaxial structure, and growing an epitaxial protecting layer on the ohmic contact layer; bonding the epitaxial protecting layer on a rigid supporting template; adopting an epitaxial substrate thinning process to thin the epitaxial substrate; evaporating a back electrode on the thinned epitaxial substrate, and bonding the thinned epitaxial substrate on a flexible thin film substrate; removing the rigid supporting template and the epitaxial protecting layer; evaporating front grid electrodes on the ohmic contact layer, removing the ohmic contact layer of a light absorbing portion through a selective corrosion process, evaporating an anti-reflection film in a corrosion area, and slivering to obtain a solar cell. The solar cell manufactured by the method is high in conversion efficiency, reliability and flexibility, and weight is reduced.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for manufacturing a high-efficiency flexible thin-film solar cell. Background technique [0002] III-V compound solar cells represented by GaInP / GaInAs / Ge triple-junction solar cells have the advantages of high photoelectric conversion efficiency, strong radiation resistance, and good temperature characteristics. It has been widely used in solar cells and has completely replaced crystalline silicon solar cells as the main power source of space vehicles. [0003] Since the GaInP / GaInAs / Ge triple-junction solar cell is based on a thicker rigid Ge substrate, usually the thickness of the rigid Ge substrate is ≥ 140 μm, the battery chip is heavy and lacks flexibility, which increases the weight and volume of the space vehicle solar panel. However, traditional copper indium gallium selenide, cadmium telluride or amorphous silicon flexible thin film solar cells have not en...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/0687H01L31/0725H01L31/0735H01L31/074H01L31/1844H01L31/1852H01L31/1896Y02E10/544Y02P70/50
Inventor 张永林志伟姜伟陈凯轩蔡建九吴洪清李俊承方天足卓祥景张银桥黄尊祥王向武
Owner XIAMEN CHANGELIGHT CO LTD