A uniform heating device and method for ito film magnetron sputtering magnetic levitation vehicle target

Abstract

Disclosed is a uniform heating device and method of a magneto-controlled sputtering maglev vehicle target of ITO (indium tin oxide) film. During large-scale continuous production of ITO film, by controlling heating temperatures of all parts of the magneto-controlled sputtering maglev vehicle target, uniform resistor is acquired by the ITO thin film, with electrical resistivity reaching 2*10-4Omega / cm and transmittance reaching 90% or above. Product quality of the ITO thin film is improved, work efficiency is greatly increased, production cost is saved, service life is prolonged by two times or above, and energy consumption and environment protection are achieved. The uniform heating device is composed of a continuous vacuum magneto-controlled sputter coating equipment chamber, a vacuum chamber temperature control door, vacuum door heaters, vacuum door isothermal heaters, magneto-controlled sputtering maglev vehicle target device, upper vacuum wall-mounted heaters, middle vacuum wall-mounted heaters, lower vacuum wall-mounted heaters, a rear temperature-control wall of the vacuum chamber and a samarium cobalt magnet device.

Description

Technical field [0001] The invention relates to an ITO film heating device and a method thereof, in particular to an ITO film magnetron sputtering magnetic levitation vehicle target uniform heating device and a method thereof. Background technique [0002] ITO transparent conductive film is doped indium tin oxide film, referred to as ITO film, which is the abbreviation of Indium Tin Oxide. ITO film is an n-type semiconductor material. It has many excellent physical and chemical properties, such as high visible light transmittance and electrical conductivity, and has good adhesion to most substrates, strong hardness and good It is resistant to acids, alkalis and organic solvents, so it is widely used in optoelectronic devices. For example: liquid crystal display (LCD), plasma display (PDP), electrode light emitting display (EL / OLED), touch screen, solar cell and other electronic instruments. [0003] At present, there are many methods for preparing ITO thin films, the common ones ...

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Problems solved by technology

The preparation process conditions, such as tin content in the target, deposition rate, substrate temperature, sputtering power, and subsequent annealing treatment, all have a great impact on the photoelectric properties of the ITO thin film; however, the existing technology on the glass substrate The optical properties of the ITO film prepared at low temperature are poor, the film oxidation is incomplete, and the structure is incomplete; especially for the crystal structure and resistance of the ITO film under different temperature conditions, the temperature cannot be accurately and effectively adjusted to control the uniformity of the resistance, which reduces the ITO. The product quality and production efficiency of the film increase the production cost and affect the service life of the display and the instrument; it is the bottleneck in the production and development of this field and cannot meet the needs of users and the market

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