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A fluidized bed chemical vapor deposition preparation method of silicon carbide nanowires

A technology of silicon carbide nanowires and chemical vapor deposition, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., to achieve the effect of convenient process operation, simple process flow, and continuous production

Active Publication Date: 2016-08-24
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no relevant report on the method of combining the fluidization process with chemical vapor deposition to prepare SiC nanowires

Method used

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  • A fluidized bed chemical vapor deposition preparation method of silicon carbide nanowires
  • A fluidized bed chemical vapor deposition preparation method of silicon carbide nanowires
  • A fluidized bed chemical vapor deposition preparation method of silicon carbide nanowires

Examples

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Effect test

Embodiment 1

[0037] Use H 2 is the fluidizing gas, H 2 The flow rate is 6L / min, 40g ZrO 2 - CoO (the mass fraction of CoO is 6%) particles are placed in a fluidized bed at 1300° C. for fluidization, and the average diameter of the particles is 600 μm. Methyltrichlorosilane is kept at 35°C, and the temperature is continuously raised to 1500°C to pass through methyltrichlorosilane, H 2 It is the carrier gas, the flow rate of the carrier gas is 0.3L / min, and the reaction time is 1h.

[0038] The XRD spectrum of the reaction product is as figure 2 As shown, by comparing the standard card, it can be seen that the product is silicon carbide in the cubic phase, and there is no other impurity phase. Scanning electron microscope and transmission electron microscope photos of SiC nanowires such as image 3 , Figure 4 As shown, it can be seen that the purity of the nanowires is high (no nanoparticles or other forms of silicon carbide), the length of the nanowires is in the range of hundreds o...

Embodiment 2

[0040] Use H 2 is the fluidizing gas, H 2 The flow rate is 3L / min, and 20g metal Fe particles are placed in a fluidized bed at 1300°C for fluidization, with an average particle diameter of 200μm. Methyltrichlorosilane is kept at 35°C, and the temperature is continuously raised to 1400°C, and methyltrichlorosilane is passed through, H 2 As the carrier gas, the flow rate of the carrier gas is 0.15 L / min. After 1 hour of reaction time, 20 g of metal Fe particles are added through the inlet of the fluidized bed, and the reaction is continued for 1 hour.

Embodiment 3

[0042] Using Ar and H 2 The mixed gas is fluidizing gas, the flow rate of Ar is 0.85L / min, H 2 The flow rate is 6L / min, 40g ZrO 2 - CoO (the mass fraction of CoO is 6%) particles are placed in a fluidized bed at 1300° C. for fluidization, and the average diameter of the particles is 800 μm. Methyltrichlorosilane is kept at 35°C, and the temperature is continuously raised to 1580°C, and methyltrichlorosilane is passed through, H 2 It is the carrier gas, the flow rate of the carrier gas is 0.3L / min, and the reaction time is 1h.

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Abstract

The invention provides a fluidized bed chemical vapor deposition preparation method of a silicon carbide nanowire, which comprises the following steps: controlling the heating mode of a fluidized pipe to sequentially form an upper low-temperature region, a middle high-temperature region and a lower low-temperature region sequentially from top to bottom in the vertical direction; fluidizing catalyst particles in the lower low-temperature region and the middle high-temperature region under the action of fluidized gas, and forming catalyst nano liquid drops in the middle high-temperature region; introducing precursor raw material steam for preparation of silicon carbide into the middle high-temperature region through carrying gas to be subjected to pyrolysis and be combined with the catalyst nano liquid drops to generate crystal nuclei; and feeding the crystal nuclei to the upper low-temperature region of the fluidized pipe through the gas flow, growing, and crystallizing to form the silicon carbide nanowire. The preparation method provided by the invention is simple in technical process, convenient in technological operation and low in cost; the catalyst is in the form of solid particles, so that the catalyst can be filled in large quantities and supplemented subsequently; and the silicon carbide nanowire product can be sucked out through negative pressure in the production process, thus realizing continuous production.

Description

technical field [0001] The invention relates to the technical field of preparation of one-dimensional silicon carbide materials, in particular to a method for preparing silicon carbide nanowires by fluidized bed chemical vapor deposition. Background technique [0002] The size anisotropy of one-dimensional nanomaterials with extremely large aspect ratio makes them exhibit novel physical and chemical properties that bulk materials do not possess. Among many kinds of one-dimensional nanomaterials, silicon carbide nanowires have potential broad application prospects in the construction of nano-functional devices due to their excellent properties in the fields of electron transport, photocatalysis, superhydrophobicity, and superplasticity. At the same time, due to the excellent mechanical properties, oxidation resistance, and corrosion resistance of silicon carbide, it can serve in higher temperature, higher power, and harsher environments. [0003] At present, the methods for ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/36B82Y30/00B82Y40/00
Inventor 刘荣正刘马林邵友林刘兵杨冰
Owner TSINGHUA UNIV
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