Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Universal method for controllable growth of nano structure on single-layer graphene film

A single-layer graphene, nanostructured technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem of inability to change the morphology, density and distribution uniformity of nanoparticles, limiting scale , the preparation process is complicated, etc.

Active Publication Date: 2015-03-25
YANGZHOU UNIV
View PDF7 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation process of physical method is cumbersome and usually requires expensive equipment. High cost is an inevitable problem, which limits the scale of industrial application
Although this method can directly prepare size-adjustable nanoparticles on graphene, it cannot change the morphology, density and distribution uniformity of nanoparticles.
In contrast, the chemical method is relatively simple and more widely used in practice, but when using this method to prepare graphene-based composites, the nucleation on the graphene carbon plane only occurs at the defect, such as oxygen functional groups such as hydroxyl and carboxyl, Cannot nucleate at other sites, which severely limits the application of graphene-based composites

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Universal method for controllable growth of nano structure on single-layer graphene film
  • Universal method for controllable growth of nano structure on single-layer graphene film
  • Universal method for controllable growth of nano structure on single-layer graphene film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Technical thinking of the present invention is:

[0021] In order to overcome the technical difficulties existing in the prior art, the present invention proposes for the first time the idea of ​​applying oxygen functional groups on graphene planes as nucleation sites. In recent years, the controllable growth of high-quality graphene films by CVD process has matured, which provides a better choice for further exploiting the advantages of graphene-based composite materials. Taking the single-layer graphene film grown by CVD on Cu foil as a typical example, based on the idea of ​​ozone treatment, we synthesized silver nanodendrites in situ under control. The process route is to first use ozone to treat the graphene film, add oxygen functional groups evenly and dispersedly on the graphene plane as the nucleation site, and then soak the treated substrate in the silver salt solution for galvanic reaction to obtain graphite Alkenyl silver nanostructured composites. And by a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a universal method for controllable growth of a nano structure on a single-layer graphene film. The method comprises the following steps: growth of a single-layer graphene film on a copper foil, namely, firstly annealing the copper foil in a mixed atmosphere of argon and hydrogen at a high temperature, then introducing methane to grow, finally closing hydrogen and methane, and cooling to room temperature in an argon atmosphere; ozone treatment on graphene, namely controlling the treatment degrees of the ozone on a sample by changing the treatment time; and deposition of a noble metal nano structure, namely soaking graphene which is subjected to ozone treatment or a copper foil substrate into a silver nitrate solution, and depositing for different periods of time, so as to obtain a product. According to the universal method disclosed by the invention, the defects that a physical method is relatively fussy in preparation process, expensive in equipment, and high in cost, and nucleation caused by a chemical method on a graphene carbon surface is only generated on the defect part are overcome; the problem that nucleation cannot be chemically synthesized by a graphene based composite material is solved; and the universal method has the advantages of simple process, large resultant quantity, low cost, controllable preparation process and the like, and is environment-friendly, and easy to synthesize on a large scale.

Description

technical field [0001] The invention belongs to the field of preparation of graphene-based composite nanomaterials, in particular to a universal method for controllably growing nanostructures on a single-layer graphene film. Background technique [0002] The two-dimensional plane of graphene provides a good platform for building devices, and its synergistic effect with other materials can further improve device performance. Due to their excellent properties and potential applications in energy, catalysis, detection, etc., graphene-based composites have attracted extensive research interest in recent years. For example, in terms of surface-enhanced Raman scattering (SERS) sensing, the composite SERS substrate of graphene and noble metal nanostructures can combine the chemical enhancement of graphene and the physical enhancement of noble metals, and the large specific surface and strong adsorption of graphene can improve the detection of molecules. The number of captures incr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04B82Y30/00C23C16/26C23C16/56C23C18/42
Inventor 何辉王海波李凯董晶曾祥华
Owner YANGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products