Electrochemical preparation method of amorphous silicon dioxide

A silica and amorphous technology, which is applied in the chemical industry, electrolytic process, electrolytic components, etc., can solve the problems of high purity of silica products, high equipment requirements, and low product purity, so as to reduce the preparation cost and synthesize the amount Large, high-purity effects

Inactive Publication Date: 2018-12-11
SHANGHAI INST OF TECH
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Problems solved by technology

[0006] The purpose of the present invention is to solve the above-mentioned deficiencies and provide a kind of electrochemical preparation method of amorphous silicon dioxide, the reaction time of this method is short, the silicon dioxide product of final gained has high purity, no impurity, solves the problem of silicon dioxide preparation. In the process, there are technical problems such as high equipment requirements, high energy consumption, and low purity and low output of the final product.

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  • Electrochemical preparation method of amorphous silicon dioxide
  • Electrochemical preparation method of amorphous silicon dioxide

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preparation example Construction

[0023] The invention provides an electrochemical preparation method of amorphous silicon dioxide, comprising the following steps: using cheap sodium silicate solution as a silicon source, adopting a cationic membrane electrolysis method to prepare a silicon dioxide precursor; The silicon precursor is dried until there is no solution, and then ground; the ground silicon dioxide precursor is subjected to multiple centrifugal filtration to make the pH value close to neutral to remove the remaining H + And sodium silicate, after drying and grinding, amorphous silica with high purity and no impurity phase can be obtained.

[0024] In the present invention, the preparation of the silicon dioxide precursor by cationic electrolysis mainly includes the following steps: using sodium silicate aqueous solution as the anolyte, hydrochloric acid as the catholyte, and an inert electrode as the electrode, adopting a constant current / constant voltage method in a bipolar chamber The sodium sili...

Embodiment

[0029] (1) The electrochemical preparation process of silicon dioxide precursor mainly includes the following steps: 0.1mol / L sodium silicate aqueous solution is used as anolyte, 0.1mol / L hydrochloric acid is used as catholyte, and DSA titanium mesh inert electrode is used as The electrode uses 20V constant voltage to electrolyze the sodium silicate solution in the electrolytic cell of the bipolar chamber, and conduct electrolysis at room temperature until all Na+ ions are transferred to the cathode chamber;

[0030] (2) The process of drying and grinding the silicon dioxide precursor obtained after electrolysis mainly includes the following steps: continuously vacuum-dry the silicon dioxide precursor obtained after electrolysis at 100°C in a vacuum drying oven until no solution exists ; Mechanically grinding the dried silica precursor;

[0031] (3) The process of centrifugally filtering the ground silica precursor mainly includes the following steps: placing the ground silica...

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Abstract

The invention belongs to the technical field of inorganic materials, in particular to an electrochemical preparation method of amorphous silicon dioxide. The electrochemical preparation method comprises the following steps of using a low-cost sodium silicate solution as a silicon source, and preparing a silicon dioxide precursor by an anion membrane electrolyzing method; drying the electrolyzed silicon dioxide precursor until the solution is completely evaporated out, and grinding; centrifuging and filtering the ground silicon dioxide precursor for multiple times, adjusting the pH (potential of hydrogen) to the neutral property, removing the remaining H+ and sodium silicate, drying, and grinding, so as to obtain the amorphous silicon dioxide with high purity and no impurity phase. The electrochemical preparation method has the advantages that the influence by Na+ is eliminated, the reaction time is short, and the amorphous silicon dioxide can be prepared at one step; according to the characteristic that the silicon dioxide is not dissolved into water, the silicon dioxide is washed and ground, so that the final amorphous silicon dioxide product has high purity and no impurity phase;the technical problems of high requirement on equipment and high energy consumption in the silicon dioxide preparation process, and low purity, small output and the like of the final product are solved.

Description

[technical field] [0001] The invention belongs to the technical field of inorganic materials, in particular to an electrochemical preparation method of amorphous silicon dioxide. [Background technique] [0002] As a member of the metal acid oxide system of functional materials, silicon dioxide is widely used in important fields such as important devices in the electronics industry, optical instruments, and communication optical fibers due to its special crystal structure. Silica has good thermal insulation, high light transmittance, high hardness, good wear resistance and good dielectric properties, and is widely used in industry. For example: as a special dielectric and heat insulating material, silicon dioxide can be used in microelectronics, optoelectronics and optical integrated devices; silicon dioxide can be used in solar devices due to its high thermal resistance and strong light transmission. Such as: silicon dioxide has been used in inorganic heat insulating materi...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/00
CPCC25B1/00Y02P20/10
Inventor 张全生闵凡奇周敦凡张绍乙张绍凡
Owner SHANGHAI INST OF TECH
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