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Zinc oxide semiconductor ceramic chip for lightning protection and preparation method for zinc oxide semiconductor ceramic chip

A technology of semi-conductive ceramic and zinc oxide, applied in the field of zinc oxide semi-conductive ceramic sheet and its preparation, can solve the problems of increasing the volume of surge protector, large thickness and size, inconvenient installation, etc. The effect of strong deterioration ability and small leakage current

Inactive Publication Date: 2015-03-25
NANJING UNIV OF INFORMATION SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the varistors currently used in voltage-limiting surge protectors have a large thickness when they have a certain reference voltage value, which increases the volume of the surge protector and brings installation problems. Inconvenience

Method used

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  • Zinc oxide semiconductor ceramic chip for lightning protection and preparation method for zinc oxide semiconductor ceramic chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) Take analytically pure raw materials, after drying, weigh them according to the following molar percentages, and configure them into zinc oxide semiconducting ceramic chip mixed powder, wherein the content of ZnO is 15mol%, Bi 2 o 3 The content is 2.5mol%, Sb 2 o 3 The content is 5mol%, Co 2 o 3 The content is 2.5mol%, MnO 2 The content is 2.5mol%, Cr 2 o 3 The content is 2.5mol%;

[0027] (2) In the above-mentioned mixed powder of zinc oxide semiconducting tiles prepared, add deionized water as a dispersant, add a PVA aqueous solution with a concentration of 8wt% as a binding agent by 5wt% of the raw material weight, and use agate quality Grinding balls are used for ball milling, and the ball milling time is 5 hours;

[0028] (3) send the ball-milled raw materials into an oven for drying, the drying temperature is 120°C, and the drying time is 22 hours;

[0029] (4) After pulverizing the dried powder with a mortar, pass through a 20-mesh sieve, and pre-bur...

Embodiment 2

[0035] (1) Take analytically pure raw materials, after drying, weigh them according to the following molar percentages, and configure them into zinc oxide semiconducting ceramic chip mixed powder, wherein the content of ZnO is 15mol%, Bi 2 o 3 The content is 2.5mol%, Sb 2 o 3 The content is 5mol%, Co 2 o 3 The content is 2.5mol%, MnO 2 The content is 2.5mol%, Cr 2 o 3 The content is 2.5mol%.

[0036] (2) in the zinc oxide mixed powder of above-mentioned preparation, add deionized water as dispersant, add the PVA aqueous solution that concentration is 10wt% as binding agent by 6wt% of raw material weight, the grinding ball of agate quality carries out ball milling, The ball milling time was 4 hours.

[0037] (3) send the ball-milled raw materials into an oven for drying, the drying temperature is 135°C, and the drying time is 23 hours;

[0038] (4) The dried powder is pulverized with a mortar, passed through a 40-mesh sieve, and the sieved powder is pre-calcined in air...

Embodiment 3

[0044] (1) Take analytically pure raw materials, after drying, weigh them according to the following molar percentages, and configure them into zinc oxide semiconducting ceramic chip mixed powder, wherein the content of ZnO is 15mol%, Bi 2 o 3 The content is 2.5mol%, Sb 2 o 3 The content is 5mol%, Co 2 o 3 The content is 2.5mol%, MnO 2 The content is 2.5mol%, Cr 2 o 3 The content is 2.5mol%.

[0045] (2) in the zinc oxide mixed powder of above-mentioned preparation, add deionized water as dispersant, add the PVA aqueous solution that concentration is 12wt% as binding agent by 6wt% of raw material weight, the grinding ball of agate quality carries out ball milling, The ball milling time was 6 hours.

[0046] (3) send the ball-milled raw materials into an oven for drying, the drying temperature is 150°C, and the drying time is 24 hours;

[0047] (4) The dried powder is pulverized with a mortar, passed through a 60-mesh sieve, and the sieved powder is pre-calcined in air...

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Abstract

The invention discloses a zinc oxide semiconductor ceramic chip for lightning protection. The ceramic chip comprises 15mol% of ZnO (zinc oxide), 2.5mol% of Bi2O3 (bismuth oxide), 5mol% of Sb2O3 (antimony trioxide), 2.5mol% of Co2O3 (cobalt oxide), 2.5mol% of MnO2 (manganese dioxide) and 2.5mol% of Cr2O3 (chromium oxide). Meanwhile, the invention further discloses a preparation method for the zinc oxide semiconductor ceramic chip for the lightning protection. The zinc oxide semiconductor ceramic chip prepared by the preparation method disclosed by the invention has the advantages of being small in leaked electric current, high in degradation resistant capacity, good in impact resistance, small in size, convenient to mount and the like, and a plurality of zinc oxide semiconductor ceramic chips can be connected in parallel for use, so that the discharge current capacity is improved.

Description

technical field [0001] The invention relates to a zinc oxide semiconducting ceramic sheet for lightning protection and a preparation method thereof, belonging to the field of lightning science and technology. Background technique [0002] Zinc oxide semiconducting ceramics have the physical properties of varistors and have the characteristics of simple manufacturing process. The semiconducting ceramics based on zinc oxide have the advantages of high nonlinear coefficient, large flow and high energy bearing capacity, so they are widely used Used in lightning protection circuits. [0003] According to the relevant requirements of the lightning protection design code for buildings, a voltage-limiting surge protector needs to be installed in the floor power distribution system. At present, the internal core device of the voltage-limiting surge protector adopts a voltage-sensitive Resistance, and the varistor is required to have a large flow capacity, low residual voltage and sm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622
Inventor 李祥超陈璞阳周中山陈则煌
Owner NANJING UNIV OF INFORMATION SCI & TECH
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