Anion-cation co-doped bismuth silicate scintillation crystal and preparation method thereof

A scintillation crystal, anion and cation technology, applied in the direction of crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of low absorption and emission spectrum intensity, and achieve the goal of reducing binding force, increasing luminous intensity, and improving absorption. Effect

Inactive Publication Date: 2015-04-29
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to overcome the problems that the transmission spectrum of the existing bismuth silicate crystal has obvious absorption in the 350-500nm band and the intensity of the emission spectrum is low. The present invention provides an anion-cation co-doped bismuth silicate scintillation crystal and a preparation method thereof

Method used

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  • Anion-cation co-doped bismuth silicate scintillation crystal and preparation method thereof
  • Anion-cation co-doped bismuth silicate scintillation crystal and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0049] The Bi with a purity of not less than 99.99% 2 O 3 , SiO 2 And BaF 2 The solid powder is dried at about 200℃ for 20 hours for dehydration; the Bi 2 O 3 , SiO 2 Weigh accurately according to the molar ratio of 2:3, mix well, press into a block, and then sinter it at 880°C for 5 hours by the high-temperature solid phase method to obtain the BSO polycrystalline material;

[0050] Take the BSO single crystal as the seed crystal, and use the dopant BaF 2 (200ppm) Fully mix with BSO polycrystalline material by means of mechanical mixing, and then will be doped with BaF 2 The BSO polycrystalline material and seed crystals are put into a platinum crucible with a thickness of 0.14mm and sealed. Then use the crucible descending method for crystal growth: first raise the furnace temperature to 1130°C for 15 hours and keep it for 6 hours; gradually raise the down tube until all the raw materials in the crucible are melted, and then keep it for 1.5 hours; Lower the speed and lead down t...

Embodiment 2

[0053] The Bi with a purity of not less than 99.99% 2 O 3 , SiO 2 And BaF 2 The solid powder is dried at about 200℃ for 20 hours for dehydration; the Bi 2 O 3 , SiO 2 Accurately weigh it according to the molar ratio of 2:3 and mix it evenly, press it into a block, and then use the high-temperature solid phase method to sinter it at 900°C for 3 hours to obtain the BSO polycrystalline material;

[0054] Take the BSO single crystal as the seed crystal, and use the dopant BaF 2 (500ppm) Fully mix with BSO polycrystalline material by means of mechanical mixing, and then will be doped with BaF 2 The BSO polycrystalline material and seed crystals are put into a platinum crucible with a thickness of 0.14mm and sealed. Then use the crucible descending method for crystal growth: first raise the furnace temperature to 1140°C for 15 hours and keep it for 6 hours; gradually raise the down tube until the raw materials in the crucible are all melted, and then keep it for 1.5 hours; Lower the spe...

Embodiment 3

[0057] The Bi with a purity of not less than 99.99% 2 O 3 , SiO 2 And BaF 2 The solid powder is dried at about 200℃ for 20 hours for dehydration; the Bi 2 O 3 , SiO 2 Weigh accurately according to the molar ratio of 2:3, mix well, press into a block, and then sinter it at 880°C for 5 hours by the high-temperature solid phase method to obtain the BSO polycrystalline material;

[0058] Take the BSO single crystal as the seed crystal, and use the dopant BaF 2 (1000ppm) Fully mix with BSO polycrystalline material by means of mechanical mixing, and then will be doped with BaF 2 The BSO polycrystalline material and seed crystals are put into a platinum crucible with a thickness of 0.14mm and sealed. Then use the crucible descending method for crystal growth: first raise the furnace temperature to 1120°C for 12 hours and keep it warm for 5 hours; gradually raise the down tube until all the raw materials in the crucible are melted, and then keep it warm for 1 hour; Lower the speed and lea...

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Abstract

The invention relates to an anion-cation co-doped bismuth silicate scintillation crystal and a preparation method thereof. The bismuth silicate scintillation crystal is doped with F<-> and Ba<2+>. According to the doped ions F<-> and Ba<2+>, local charge imbalance inside the crystal is compensated to a certain degree; and moreover, bridging oxygen between silica tetrahedrons can be broken by F, the bridging oxygen is replaced to enter the BSO melt, and the binding force between silicon-oxygen aggregation layers can be reduced, so that the viscosity of the BSO melt is reduced, and the macroscopic defects are reduced.

Description

Technical field [0001] The invention relates to an anion and cation co-doped bismuth silicate scintillation crystal and a preparation method thereof, belonging to the field of optical crystals. Background technique [0002] Bismuth silicate (Bi 4 Si 3 O 12 , Referred to as BSO) crystal as a new type of scintillation crystal, due to its high density, short absorption cut-off wavelength, fast decay time, high radiation hardness and low cost, it has attracted great interest from scientists in recent years. An important candidate for the first generation of homogeneous hadron calorimeters, it has huge application prospects in the field of high energy physics. [0003] However, in the actual growth process of BSO crystal, [SiO 4 ]Tetrahedral aggregation and Bi 3+ Electronic configuration [Xe]4f 14 5d 10 6s 2 The high polarity of the middle lone pair of electrons makes the viscosity of BSO high temperature melt much higher than that of BGO crystals with similar structure and performance;...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/34C30B11/00
CPCC30B11/00C30B29/34
Inventor 赵奇袁晖周尧熊巍陈良
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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