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Electrodeless semiconductor gas sensor and preparation method thereof

A gas sensor and semiconductor technology, applied in the direction of material resistance, etc., can solve the problems of restricting the design and preparation of flexible gas sensors, high production costs, and high prices, and achieve the goal of avoiding excessive gas adsorption capacity, low cost, and excellent mechanical properties Effect

Active Publication Date: 2015-05-13
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

Gold is expensive and requires a vacuum process. Not only is the production cost high and the process is complicated, but the bending fatigue resistance of the sensor is affected by the interface peeling between the signal electrode, the insulating substrate and the gas-sensitive layer, and the bending splitting of the signal electrode itself. Due to the limitation of various factors, there are high requirements for signal electrodes, which limits the design and preparation of flexible gas sensors.

Method used

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  • Electrodeless semiconductor gas sensor and preparation method thereof
  • Electrodeless semiconductor gas sensor and preparation method thereof
  • Electrodeless semiconductor gas sensor and preparation method thereof

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preparation example Construction

[0029] The preparation method of above-mentioned semiconductor gas sensor is:

[0030] (1) Uniformly disperse the colloidal nanocrystal / graphene composite powder in an organic solvent to obtain a mixed solution. Specifically, the organic solvent is acetone.

[0031] (2) Coating the mixed solution obtained in step (1) on an insulating substrate to form a uniform film. Specifically, the mixed solution can be coated on an insulating substrate to form a film at room temperature by means of drop coating, spin coating, dipping, spraying, printing, etc.; the insulating substrate is paper, plastic or ceramics.

[0032] (3) Repeat step (2) to obtain a gas-sensitive layer with a desired thickness, and complete the preparation of the gas sensor.

[0033] Specifically, colloidal nanocrystal / graphene composite powder is PbS colloidal nanocrystal / graphene composite powder and / or PbSe colloidal nanocrystal / graphene composite powder, wherein, the mol ratio of Pb atom and C atom is 1: (0.5~12...

Embodiment 1

[0040] Take 40mg of graphene oxide (GO) and 0.106g of lead acetate, disperse it in a mixed solvent composed of 2.5ml DMSO and 27.5ml DMF, and ultrasonically disperse it evenly for 1 hour to obtain a mixed solution; move the mixed solution to a 50ml reaction In the kettle, react at a high temperature of 180°C for 12 hours, pour out the upper liquid after the reaction, and take out the lower solid precipitate; wash the solid precipitate with acetone and ethanol to remove the remaining reactants. The specific process is as follows: : Add 10ml of acetone and 15ml of ethanol to the solid sediment successively, put it into a centrifuge and rotate at a speed of 5000rpm for 3 minutes, then pour out the supernatant and leave the sediment, the first cleaning process is over, repeat the process three times Cleaning is completed; the solid precipitate after cleaning is placed in the air and dried naturally for 24 hours to obtain a PbS colloidal nanocrystal / reduced graphene oxide (rGO) comp...

Embodiment 2

[0043] Get 30mg graphene oxide and 0.675g lead acetate, disperse it in the mixed solvent that 2.5ml DMSO and 27.5ml DMF form, ultrasonic 1 hour makes it disperse evenly, obtain mixed solution; Move mixed solution in the reaction kettle of 50ml, React at a high temperature of 180°C for 12 hours, pour the mixed solution after the reaction into the upper liquid, and take out the lower solid precipitate; wash the solid precipitate with acetone and ethanol to remove the remaining reactants. The specific process is: Add 10ml of acetone and 15ml of ethanol to the solid precipitate, put it into a centrifuge and spin at a speed of 5000rpm for 3 minutes, then pour out the supernatant and leave the precipitate. After the first cleaning process is over, repeat this process three times to complete the cleaning; The washed solid precipitate was naturally dried in air for 24 hours to obtain a PbS colloidal nanocrystal / rGO composite powder, in which the molar ratio of Pb atoms to C atoms was 1...

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Abstract

The invention discloses an electrodeless semiconductor gas sensor and a preparation method thereof. By adopting the electrodeless-type design, a gas sensitive layer is produced from a colloidal-state nano crystal composite material which is high in sensitivity and good in conductivity, the gas sensitive layer is smeared on an insulation substrate to form a device, no additional signal electrode is needed, the device structure and the process procedure are simple, the cost is reduced, and the mass production can be realized; moreover, the method is suitable for producing a flexible gas sensor. The gas sensor has characteristics of light weight, thinness, shortness, small size and good portability; moreover, the working temperature is low, and the application prospect is good.

Description

technical field [0001] The invention belongs to the technical field of gas sensitive materials and components, and more specifically relates to an electrodeless semiconductor gas sensor and a preparation method thereof. Background technique [0002] The semiconductor resistive gas sensor has the characteristics of simple measurement method, high sensitivity, fast response, convenient operation, and low cost. It is widely used in the detection of flammable and explosive gases and toxic gases. play an important role. In recent years, the continuous emergence of new nanomaterials such as quantum dots, graphene, carbon nanotubes, and silicon nanowires has injected new vitality into semiconductor gas sensors, especially colloidal nanocrystals including colloidal quantum dots. Excellent properties such as large specific surface area, high surface activity, uniform size, and controllable size have significantly improved the performance of gas sensors, making the operating temperat...

Claims

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Application Information

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IPC IPC(8): G01N27/12
Inventor 罗真刘欢徐宋曼罗家俊刘铁峰李康华李敏唐江周印华
Owner HUAZHONG UNIV OF SCI & TECH
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