Nitrogen dioxide gas sensor and preparation and testing methods of nitrogen dioxide gas sensor

Abstract

The invention provides a nitrogen dioxide gas sensor and preparation and testing methods of the nitrogen dioxide gas sensor. The sensor structure is an organic thin-film field effect transistor, and comprises a gate electrode, a substrate, a gate oxide layer, a source electrode and a drain electrode, as well as an active layer; the active layer is a composite thin film formed by compounding ZnO nanorods and a P3HT polymer; the preparation method comprises the following steps: (1) preparing the ZnO nanorods by use of a low-temperature hydrothermal method; (2) depositing a P3HT-ZnO composite material on the source electrode and the drain electrode by use of a spraying film-forming method, wherein the ZnO nanorods are in contact with the P3HT polymer to form a heterojunction structure; the sensor is capable of effectively increasing the migration rate of the OTFT device and the response of the gas sensor to a gas to be tested; the film forming process is simple, the production cost is low, the electrical properties of the FET device can be improved favorably, and the response of the gas sensor can be effectively improved according to the change of the potential barrier of the interface after the molecules of the gas to be tested are adsorbed on the interface of the formed heterojunction structure.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a nitrogen dioxide gas sensor working at room temperature, a preparation method and a testing method thereof. Background technique [0002] Since humans entered the information society at the end of the 20th century, all human activities have centered on information acquisition and information exchange. As the foundation of information technology and one of the three pillars, sensor technology has also entered a new era of rapid development. [0003] Since the sensitive layer of the OTFT gas sensor is also the active layer of the FET device, the performance of the sensitive layer film is very important. The selection of the sensitive layer should not only meet the special requirements of FET transistors, such as high carrier mobility and low intrinsic conductance, but also be sensitive to the gas to be measured. This puts forward very high requirements for sensitive materials, a...

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Problems solved by technology

However, most of the current reports indicate that the doping of semiconductor oxides in organic semiconductors will deteriorate the performance of organic semiconductor polymers.

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