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A kind of method that utilizes sol-gel method to prepare chalcogenide film

A chalcogenide, sol-gel technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., to achieve the effect of easy control, convenient industrial production, and reduced operation steps

Active Publication Date: 2017-01-04
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the research on the one-step preparation of chalcogenide thin films by non-toxic solvent sol-gel method has not been reported yet.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Take 0.1 mol copper acetate (C 4 h 6 CuO 4 ·H 2 O), 0.05 mol stannous chloride (SnCl 2 ), 0.06 mol zinc acetate (Zn(CH 3 COO) 2 ·H 2 O ) was added to 20 ml ethanolamine (C 2 h 7 NO), stir until completely dissolved; (2) take 0.5mol thioacetamide (C 2 h 5 NS ) was added to 20 ml ethanolamine and stirred until completely dissolved; (3) Take equal amounts of (1) and (2) and mix and stir until uniform to form a copper zinc tin sulfur sol precursor; (4) Spin the sol precursor Apply to cleaned molybdenum-coated glass, then dry in a vacuum oven at 180 ºC (-0.8 Bar) for 10 minutes, and repeat the spin coating 5 times; (5) After the spin coating is completed, place the sample in a tube furnace for 400 ºC in a nitrogen atmosphere for 30 minutes to obtain a copper-zinc-tin-sulfur thin film with a thickness of 0.5 microns.

Embodiment 2

[0022] (1) Take 0.1 mol copper acetate (C 4 h 6 CuO 4 ·H 2 O), 0.05 mol stannous chloride (SnCl 2 ), 0.06 mol zinc acetate (Zn(CH 3 COO) 2 ·H 2 O ) was added to 20 ml ethanolamine (C 2 h 7 NO), stir until completely dissolved; (2) take 0.5mol thioacetamide (C 2 h 5 NS ) and 0.13 mol were added to 20 ml ethanolamine, and stirred until completely dissolved; (3) Mixed equal amounts of (1) and (2) and stirred until uniform to form a copper-zinc-tin-sulfur-selenium sol precursor; (4) using Spin-coat the copper-zinc-tin-sulfur-selenide sol precursor onto the cleaned molybdenum-coated glass with a homogenizer, then dry it in a vacuum oven at 180 ºC (-0.8 Bar) for 10 minutes, and repeat the spin-coating 10 times; (5) After the spin coating is completed, the sample is placed in a tube furnace at 450 ºC for annealing in a nitrogen atmosphere for 20 minutes, and a copper-zinc-tin-sulfur-selenide film with a thickness of about 1 micron can be obtained. In addition, CuZnSnSSe th...

Embodiment 3

[0024] (1) Add 0.1 mol copper acetate (C 4 h 6 CuO 4 ·H 2 O), 0.05 mol stannous chloride (SnCl 2 ) was added to 20 ml ethanolamine (C 2 h 7 NO), stirred until completely dissolved; (2) Take 0.5 mol thioacetamide (C 2 h 5 NS ) into 20 ml of ethanolamine, and stirred until completely dissolved; (3) Mixed equal amounts of (1) and (2) and stirred until uniform to form a copper-tin-sulfur sol precursor; (4) Use a homogenizer to mix The copper-tin-sulfur sol precursor was spin-coated on the cleaned molybdenum-coated glass, and then dried in a vacuum oven at 180 ºC (-0.8 Bar) for 10 minutes, and the spin-coating was repeated 15 times; (5) After the spin-coating was completed, the sample Anneal in a tube furnace at 360 ºC in a nitrogen atmosphere for 50 minutes to obtain a copper-tin-sulfur thin film with a thickness of 1.5 microns.

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PUM

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Abstract

The invention discloses a method for preparing a chalcogenide film by a sol-gel process. First, a chalcogenide sol precursor is prepared; then, a film is formed on a conductive substrate by a spin-coating or spraying method; and finally, a multi-component chalcogenide film is prepared through annealing treatment. The method of the invention has good application value in the aspect of solar cells and other semiconductor devices.

Description

technical field [0001] The invention belongs to the technical field of preparation of solar cell absorbing layer materials, and in particular relates to a sol-gel preparation method of a chalcogenide semiconductor thin film. Background technique [0002] Chalcogenide Cu 2 SnS 3 , Cu 2 Sn(SSe) 3 , Cu 2 ZnSnS 4 Semiconductor materials such as (CZTS) and CuZnSnSe (CZTSe) may become an ideal material for thin-film solar cells because the band gap of these materials is between 1.0 and 1.6 eV, which is comparable to the ideal band gap (1.4 eV) of single-junction solar cells. ~1.5 eV) are very close, with high absorption coefficients (>10 cm -4 ), the constituent elements are abundant and environmentally friendly in the crust, which makes them compatible with CdTe, CuInGaSe 2 (CIGS) are potentially competitive with other solar cell materials that are limited by element scarcity or toxicity. In recent years, this type of material has attracted widespread attention. [00...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032
CPCY02P70/50
Inventor 韩修训赵雲李文刘亮
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI