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Preparation method of double-layer self-supporting magneto-electric composite thin film based on barium titanate and cobalt ferrite

A technology of magnetoelectric compounding and thin film preparation, applied in the field of microelectronics, can solve problems such as leakage, affecting magnetoelectric coupling, etc., and achieve the effect of preventing rupture

Active Publication Date: 2015-06-03
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the clamping of the substrate, the magnetoelectric coupling is seriously affected
In 2004, H. Zheng et al. successfully prepared a barium titanate-cobalt ferrite nanocomposite material with a 1-3 structure. The material said to increase the magnetoelectric coefficient and reduce the substrate clamping effect, but there is a problem of leakage. defect

Method used

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  • Preparation method of double-layer self-supporting magneto-electric composite thin film based on barium titanate and cobalt ferrite
  • Preparation method of double-layer self-supporting magneto-electric composite thin film based on barium titanate and cobalt ferrite
  • Preparation method of double-layer self-supporting magneto-electric composite thin film based on barium titanate and cobalt ferrite

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1: Prepare a magnetoelectric composite thin film of cobalt ferrite and 10 nm of barium titanate with a thickness of 20 nm.

[0035] Step 1, growing a magnesium oxide film on a C-plane sapphire substrate.

[0036] 1.1) Put the sapphire substrate, magnesium oxide target, barium titanate target and cobalt ferrite target on the C side into the reaction chamber of the pulsed laser deposition system, and vacuum the reaction chamber until the vacuum degree reaches 4*10 -6 Below mbar, then feed oxygen into the reaction chamber to maintain the oxygen pressure in the reaction chamber at 5*10 -3 mbar;

[0037] 1.2) Turn on the laser switch and set the energy density of the laser to 4J / cm 2 The sum frequency is 3Hz, the temperature of the substrate is set to 600°C, and the magnesium oxide target is burnt 10,000 times through the laser beam, so that the burnt magnesium oxide plasma is deposited on the sapphire substrate on the C surface, and the magnesium oxide thin film i...

Embodiment 2

[0051] Example 2: Prepare a magnetoelectric composite film with a thickness of 30 nm of cobalt ferrite and 15 nm of barium titanate.

[0052] In the first step, a magnesium oxide film is grown on a C-plane sapphire substrate.

[0053] 1a) Put the sapphire substrate, magnesium oxide target, barium titanate target and cobalt ferrite target on the C side into the reaction chamber of the pulsed laser deposition system, and vacuum the reaction chamber until the vacuum degree reaches 4*10 -6 Below mbar, then feed oxygen into the reaction chamber to keep the oxygen pressure in the reaction chamber at 0.01mbar;

[0054] 1b) Turn on the laser switch and set the energy density of the laser to 4J / cm 2 The sum frequency is 4Hz, the temperature of the substrate is set at 650°C, and the magnesium oxide target is burned 13,000 times by the laser beam, so that the burnt magnesium oxide plasma is deposited on the sapphire substrate of the C surface, and the magnesium oxide thin film is comple...

Embodiment 3

[0068] Example 3: Prepare a magnetoelectric composite thin film of cobalt ferrite and 20 nm of barium titanate with a thickness of 40 nm.

[0069] Step 1, growing a magnesium oxide film on a C-plane sapphire substrate.

[0070] Put the sapphire substrate, magnesium oxide target, barium titanate target and cobalt ferrite target on the C side into the reaction chamber of the pulsed laser deposition system, and vacuum the reaction chamber until the vacuum degree reaches 4*10 -6 Below mbar, feed oxygen into the reaction chamber to keep the oxygen pressure in the reaction chamber at 0.1mbar; then turn on the laser switch and set the energy density of the laser to 4J / cm 2 The sum frequency is 5Hz, the temperature of the substrate is set to 700°C, and the magnesium oxide target is burnt 15,000 times by the laser beam, so that the burnt magnesium oxide plasma is deposited on the sapphire substrate of the C surface, and the magnesium oxide thin film is completed. grow like figure 2 ...

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Abstract

The invention discloses a preparation method of a double-layer self-supporting magneto-electric composite thin film based on barium titanate and cobalt ferrite and mainly solves the problem that an existing composite material with a 1-3 structure cannot reduce the substrate clamping effect and the electric leakage at the same time. The preparation method comprises the following realization steps: firstly depositing a layer of magnesium oxide thin film on a sapphire substrate and depositing cobalt ferrite and barium titanate thin films on the magnesium oxide thin film in sequence to obtain a double-layer magneto-electric composite thin film; then spin-coating the surface of the double-layer magneto-electric composite thin film with polymethyl methacrylate, removing a single crystal magnesium oxide thin film by using an ammonium sulfate solution to separate the magneto-electric composite thin film adhered with the polymethyl methacrylate from the sapphire substrate and transferring the magneto-electric composite thin film separated from the sapphire substrate to a substrate required subsequently to obtain the cobalt ferrite and barium titanate self-supporting magneto-electric composite thin film. Compared with the composite material with the 1-3 structure, the self-supporting magneto-electric composite thin film obtained by the preparation method can reduce substrate clamping, solve the electric leakage problem and be used for the preparation of a magneto-electric sensor.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for preparing a magnetoelectric composite thin film, which can be used in the preparation of a magnetoelectric sensor. Background technique [0002] Magnetoelectric materials are a class of multiferroic materials, which refer to materials that have both ferroelectricity and ferromagnetism within a certain temperature range. Due to the ferroelectric-ferromagnetic cross-coupling effect in magnetoelectric materials, it is possible to change the magnetization by electric field and the electric polarization by magnetic field. However, single-phase ferromagnetic multifunctional materials have the disadvantages of too low Curie temperature and too weak magnetoelectric coupling coefficient, which lead to a far distance from practical use, and magnetoelectric composite materials have appeared for this reason. Different from single-phase magnetoelectric mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/10H10N50/01
Inventor 陆小力张吉文许晟瑞张进成郝跃
Owner XIDIAN UNIV
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