Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Self Q-adjusting garnet crystal, self Q-adjusting device made of self Q-adjusting garnet crystal and self Q-adjusting pulsed laser made of self Q-adjusting garnet crystal

A technology of pulsed lasers and pulsed lasers, applied in lasers, laser components, crystal growth, etc., can solve the problems of affecting the performance of saturated absorption modulation, increasing the application length of crystals, and hindering the miniaturization of self-Q-switching devices

Active Publication Date: 2015-06-17
SHANDONG UNIV
View PDF16 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for such crystals, the doped Cr 4+ The radius of the ion is larger than that of Al on the alternate tetrahedral site 3+ ion( and ) is large, resulting in Re, Cr 4+ : Cr in YAG crystal 4+ The segregation coefficient of ions is relatively small
Thus increasing the application length of the crystal and hindering the miniaturization of self-Q-switching devices
In addition Cr 4+ The small ground state absorption cross section and large excited state absorption cross section of ions in YAG increase the unsaturated absorption loss in the cavity and affect its saturable absorption modulation performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self Q-adjusting garnet crystal, self Q-adjusting device made of self Q-adjusting garnet crystal and self Q-adjusting pulsed laser made of self Q-adjusting garnet crystal
  • Self Q-adjusting garnet crystal, self Q-adjusting device made of self Q-adjusting garnet crystal and self Q-adjusting pulsed laser made of self Q-adjusting garnet crystal
  • Self Q-adjusting garnet crystal, self Q-adjusting device made of self Q-adjusting garnet crystal and self Q-adjusting pulsed laser made of self Q-adjusting garnet crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Nd 3+ ,Cr 4+ :Y 3 (Sc x Ga 1-x ) 2 Ga 3 O 12 The steps for the growth of the crystal by the light floating zone method are:

[0071] (1) In Nd 2 O 3 , Y 2 O 3 , Y 2 O 3 , Ga 2 O 3 , Cr 2 O 3 And CaCO 3 As raw materials, according to the formula (Nd y Ca z Y 1-y-z ) 3 (Sc x Ga 1-x ) 2 (Cr z Ga 1-z ) 3 O 12 Calculate the molar ratio of each component in the weighing raw materials. After mixing for 12 hours, the prepared raw materials are placed in a Pt crucible and sintered at 1000-1100°C for 10 hours. Finally, grinding and mixing to obtain the corresponding Nd with a particle size of micron 3+ ,Cr 4+ :Y 3 (Sc x Ga 1-x ) 2 Ga 3 O 12 Garnet polycrystalline material.

[0072] (2) The above Nd 3+ ,Cr 4+ :Y 3 (Sc x Ga 1-x ) 2 Ga 3 O 12 The garnet polycrystalline material is put into a balloon and tamped, and rolled into a circle. After vacuuming, press for 5 minutes under 60-80MPa isostatic water pressure to obtain Nd with a length of 70mm and a diameter of 7mm 3+ ,Cr 4+ :Y 3 (Sc...

Embodiment 2

[0076] Prepare Nd according to the method of Example 1 3+ ,Cr 4+ :Y 3 Ga 5 O 12 Crystal, Nd 3+ Doping concentration of ions y = 0.01, Cr 4+ The doping concentration of ions z=0.00033. The growth cycle is about 15h, the prepared Nd 3+ ,Cr 4+ :Y 3 Ga 5 O 12 The crystal photos such as figure 1 Shown. The length of the crystal is about 35mm, the diameter of the equal diameter is about 6mm, and the length of the equal diameter part is about 15mm.

[0077] Cut the crystal along the [111] direction with a thickness of 1mm. The non-polarized absorption spectrum of the crystal in the [111] direction is shown as image 3 Shown.

Embodiment 3

[0079] Prepare Yb according to the method of Example 1 3+ ,Cr 4+ :Y 3 Ga 5 O 12 Crystal, Yb 3+ Ion doping concentration y = 0.1, Cr 4+ The doping concentration of ions z = 0.0005. The growth cycle is about 15h, the prepared Yb 3+ ,Cr 4+ :Y 3 Ga 5 O 12 The crystal photos such as figure 2 Shown. The length of the crystal is about 35mm, the diameter of the equal diameter is about 6mm, and the length of the equal diameter part is about 15mm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
diameteraaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a self Q-adjusting garnet crystal, a self Q-adjusting device made of the self Q-adjusting garnet crystal and a self Q-adjusting pulsed laser made of the self Q-adjusting garnet crystal. The molecular general formula of the self Q-adjusting garnet crystal Re3+, Cr4+: A3(ScxGa1-x)2Ga3O12 is (ReyCazA1-y-z)3(ScxGa1-x)2(CrzGa1-z)3O12, wherein Re is equal to Nd or Yb, A is equal to Y, Gd or Lu,x is greater than or equal to 0 and smaller than or equal to 1,y is greater than or equal to 0 and smaller than or equal to 1, and z is greater than or equal to 0.00001 and smaller than or equal to 0.1; gain active ions (Nd3+ or Yb3+) and saturable absorbed ions Cr4+ are combined to realize the output of the self Q-adjusting pulsed laser with corresponding wave length. Co-doping Nd3+ and Cr4+ionic crystal Nd3+,Cr4+:A3(ScxGa1-x)2Ga3O12 can realize self Q-adjusting pulsed laser of which the output wavelength is 0.9 micron (4F3 / 2-4I9 / 2) and 1.06 microns (4F3 / 2-4I11 / 2); co-doping Yb3+ and Cr4+ionic crystal Yb3+,Cr4+:A3(ScxGa1-x)2Ga3O12 can realize self Q-adjusting pulsed laser of which the output wavelength is about 1 micron (2F5 / 2-2F7 / 2). The self Q-adjusting pulsed laser disclosed by the invention has the characteristics of simple and compact structure, small size, low cost, and simpleness in operation.

Description

Technical field [0001] The invention relates to a self-Q-adjusted garnet crystal and a growth method thereof, and a self-Q-adjusted device and a self-Q-adjusted pulse laser manufactured by using the crystal, belonging to the technical field of crystal growth and laser devices. Background technique [0002] Due to its advantages of high peak power, large pulse energy, and relatively short pulse time, Q-switched pulsed lasers have important potential applications in the fields of industrial processing, remote sensing measurement, and military countermeasures. Q-switched pulse lasers are divided into active Q-switched lasers and passively Q-switched lasers. Compared with active Q-switched lasers, passively Q-switched lasers have a simple, compact and low-cost configuration, which has attracted more research and attention. For passively Q-switched lasers, the saturable absorber is an important part of it. By using the saturable absorption characteristics of the saturable absorber i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28C30B13/22H01S3/16
CPCC30B13/22C30B29/28H01S3/164
Inventor 张怀金王树贤于浩海王继扬
Owner SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com