Preparation method of novel anti-UV textile fabric

A technology of anti-ultraviolet and textile fabrics, applied in the field of textile processing, can solve the problems of insufficient density and uniformity of the film, production of industrial wastewater, environmental pollution, etc., achieve high chemical stability and thermal stability, strong adhesion, and strong ability to absorb ultraviolet rays Effect

Inactive Publication Date: 2015-06-24
JIANGNAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The former is simple and easy to prepare, but the film is not dense and uniform, the adhesion is weak, and it is easy to fall off; the latter is carried out in a chemical reaction solution, which will produce industrial wastewater and cause environmental pollution.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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  • Preparation method of novel anti-UV textile fabric

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Cleaning: Select polypropylene fabric, put it into acetone solution, and ultrasonically wash it for 40 minutes to remove organic solvents, dust and other impurities on the surface, then rinse it repeatedly with deionized water and put it in an oven at 45°C for drying.

[0020] (2) Sputtering: Put the pretreated substrate on the sample holder in the sputtering chamber, the distance between the target and the fabric substrate is 60 mm; use a water cooling device to cool the substrate; pump the reaction chamber to the background vacuum , and then rush into the high-purity argon gas with a volume fraction of 99.999% as the sputtering gas; the specific sputtering process parameters are as follows: first, the silver target is sputtered, the sputtering power is 40W, the sputtering pressure is 2.8Pa, and the sputtering time is 20min; When sputtering the ZnO target next, the sputtering power is 120W, the sputtering pressure is 0.5Pa, and the sputtering time is 60min; finally,...

Embodiment 2

[0022] (1) Cleaning: Select pure cotton fabrics, put them into acetone solution, and ultrasonically wash them for 35 minutes to remove organic solvents, dust and other impurities on the surface, then rinse them repeatedly with deionized water and dry them in an oven at 45°C.

[0023] (2) Sputtering: Put the pretreated substrate on the sample holder in the sputtering chamber, the distance between the target and the fabric substrate is 70mm; use a water cooling device to cool the substrate; pump the reaction chamber to the background vacuum , and then rush into the high-purity argon gas with a volume fraction of 99.999% as the sputtering gas; the specific sputtering process parameters are as follows: first, the silver target is sputtered, the sputtering power is 60W, the sputtering pressure is 1.5Pa, and the sputtering time is 10min; When sputtering the ZnO target next, the sputtering power is 100W, the sputtering pressure is 1Pa, and the sputtering time is 30min; finally, TiO is...

Embodiment 3

[0025] (1) Cleaning: select polyester fabric, put it into acetone solution, and ultrasonically wash it for 30 minutes to remove organic solvents, dust and other impurities on the surface, then rinse it repeatedly with deionized water and put it in an oven at 50°C for drying.

[0026] (2) Sputtering: Put the pretreated substrate on the sample holder in the sputtering chamber, the distance between the target and the fabric substrate is 100mm; use a water cooling device to cool the substrate; pump the reaction chamber to the background vacuum , and then rush into the high-purity argon gas with a volume fraction of 99.999% as the sputtering gas; the specific sputtering process parameters are as follows: first, the silver target is sputtered, the sputtering power is 80W, the sputtering pressure is 1.2Pa, and the sputtering time is 20min; When sputtering the ZnO target next, the sputtering power is 100W, the sputtering pressure is 1.2Pa, and the sputtering time is 20min; finally, TiO...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Abstract

The invention discloses a preparation method of a novel anti-UV textile fabric and belongs to the field of textile processing. By a magnetron sputtering technology, nano-silver, nano-zinc oxide and nanometer titania particles are respectively sputtered onto a fabric base material to form an uniform nanocomposite film so as to finally obtain the anti-UV fabric. The novel anti-UV textile fabric has advantages of simple preparation method, simple operation, low cost, no pollution, high chemical stability and thermal stability, no odor, nontoxicity, no irritating performance, using safety, especially high capability of absorbing ultraviolet rays and shielding effect on ultraviolet rays in UV-A zone and UV-B zone. Absorptivity or reflectivity of ultraviolet rays reaches more than 90%. In addition, the fabric not only has a reflection effect on ultraviolet radiation but also has special selection and absorption properties. By the fabric, ultraviolet energy can be converted to thermal energy or other harmless low-energy forms. Thus, the fabric provided by the invention has properties of heat stroke prevention, heat insulation and cool handtouch.

Description

technical field [0001] The invention relates to a preparation method of a novel anti-ultraviolet textile fabric, which belongs to the field of textile processing. Background technique [0002] Ultraviolet rays are electromagnetic waves with a wavelength in the range of 200-400nm. The region with a wavelength of 400-320nm is called UV-A; the region with a wavelength of 320-280nm is called UV-B; the region with a wavelength of 280-200nm is called UV-C. UV-C has a shorter wavelength and has been absorbed in the air and cannot reach the earth's surface. Ultraviolet rays account for about 6% of sunlight, of which UV-A has a larger proportion and UV-B has a smaller proportion. UV-A will penetrate the epidermis, causing muscle loss of elasticity, rough skin, and wrinkles. UV-B is associated with carcinogens. [0003] Excessive sunlight and ultraviolet rays are very harmful to human health. In addition to applying sunscreen and other skin care products, the development of functio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35D06M11/83D06M11/44D06M11/46
Inventor 乔辉陈克罗磊刘露汲明秀邵冬燕魏取福黄锋林
Owner JIANGNAN UNIV
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