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Silicon-based thin film solar cell with quantum well structures and manufacturing method thereof

A technology for solar cells and silicon-based thin films, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as spectral energy gap matching, achieve uniform grain size, improve efficiency, and energy gap matching. Effect

Active Publication Date: 2015-06-24
湖南共创光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] The technical problem to be solved by the present invention is, aiming at the problems existing in the prior art in the matching of thin-film materials and solar spectrum energy gaps, the defects generated during the formation and growth of crystal grains, and how to fully absorb sunlight and improve the photoelectric conversion efficiency, propose Silicon-based thin-film solar cell with quantum well structure and manufacturing method thereof

Method used

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  • Silicon-based thin film solar cell with quantum well structures and manufacturing method thereof
  • Silicon-based thin film solar cell with quantum well structures and manufacturing method thereof
  • Silicon-based thin film solar cell with quantum well structures and manufacturing method thereof

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Embodiment 1

[0044] For multi-junction silicon-based thin-film solar cells with quantum well structure, figure 1 It is a structural diagram of a multi-junction silicon-based thin film solar cell with a quantum well structure; its quantum well structure is formed by matching and combining the following materials: amorphous SiC (2.1-2.3eV) / nanocrystalline SiC (1.8-2.1eV), amorphous Si (1.7eV) / nanocrystalline Si (1.7eV to 1.2eV), amorphous Si1-xGex (0≤X≤1, 1.7eV to 1.2eV) / amorphous Si1-xGex (0≤X≤1, 1.5eV to 1.2eV), nanocrystalline Si (1.2eV to 1.7eV) / nanocrystalline Si (1.1eV to 1.5eV), nanocrystalline Si (1.1eV to 1.5eV) / microcrystalline Si (1.1eV).

[0045] Such as Figure 4 As shown, the manufacturing method of the silicon-based thin-film solar cell with quantum well structure comprises:

[0046] (1) cleaning the glass substrate;

[0047] (2) preparing the TCO front electrode on the substrate;

[0048] (3) Using a 355nm wavelength laser to divide the front electrode of the TCO to form ...

Embodiment 2

[0069] For double-junction silicon-based thin-film solar cells, figure 2 It is a schematic diagram of the structure of an amorphous / microcrystalline double-junction silicon-based thin-film solar cell with a quantum well structure; its quantum well structure is formed by a matching combination of the following materials, amorphous Si (1.7eV) / nanocrystalline Si (1.7eV to 1.2eV) , nanocrystalline Si (1.2eV to 1.7eV) / nanocrystalline Si (1.1eV to 1.5eV) and amorphous Si (1.7eV) / nanocrystalline Si (1.7eV to 1.2eV), nanocrystalline Si (1.2eV to 1.5 eV) / microcrystalline Si (1.1eV); and prepare multi-junction thin film solar cells with quantum well structure in descending order of energy level. Usually the thickness of the high energy gap material is 1-10nm, the thickness of the low energy gap material is 10-100nm, and the structural period of the quantum well is 5-20. In order to reduce the resistance of the quantum well, the thin film material in the quantum well structure is prope...

Embodiment 3

[0087] For triple-junction silicon-based thin-film solar cells, image 3It is a schematic diagram of the structure of an amorphous / microcrystalline / microcrystalline triple-junction silicon-based thin-film solar cell with a quantum well structure; its quantum well structure is formed by matching and combining the following materials: amorphous Si (1.7eV) / nano-Si (1.2eV to 1.7 eV), high-energy nanocrystalline Si (1.2eV to 1.7eV) / nanocrystalline Si (1.1eV to 1.5eV), nanocrystalline Si (1.1eV to 1.5eV) / microcrystalline Si (1.1eV). And prepare multi-junction thin film solar cells with quantum well structure in descending order of energy level. Usually the thickness of the high energy gap material is 1-10nm, the thickness of the low energy gap material is 10-100nm, and the structural period of the quantum well is 5-20. In order to reduce the resistance of the quantum well, the thin film material in the quantum well structure is properly doped with phosphorus (P) and boron (B), and ...

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Abstract

The invention discloses a silicon-based thin film solar cell with quantum well structures and a manufacturing method thereof. In the multi-junction thin film solar cell, for an i layer of a pin structure of each junction, materials which are identical in crystal structure but different in energy gap are adopted for forming one quantum well structure. The quantum wells can separate and capture free electrons, large current is formed under the excitation of sunlight, and then the efficiency of the thin film solar cell is improved. The barrier heights of the quantum wells can be adjusted through the energy gaps of the matched materials, and the barrier widths of the quantum wells can be adjusted through the thicknesses of the matched materials. Meanwhile, the quantum well structure of the i layer of the pin structure of each junction avoids abnormal grain growth and hole or crack formation, high-quality thin films which are compact, uniform in grain size and matched in energy gap are manufactured, and the quantum well structures are beneficial for sufficient absorption of sunlight. Thus, the efficiency of the silicon-based thin film solar cell is further improved.

Description

technical field [0001] The invention relates to a solar cell, a thin-film solar cell with a quantum well structure and a manufacturing method thereof, in particular to a silicon-based thin-film solar cell structure with a quantum well structure and a manufacturing method thereof. Background technique [0002] Since the French scientist AE. Becquerel discovered the photoelectric conversion phenomenon in 1839, the first solar cell based on semiconductor selenium was born in 1883. Russell obtained the first solar cell patent (US.2,402,662) in 1946, and its photoelectric conversion efficiency was only 1%. It was not until 1954 that Bell Laboratories' research discovered that doped silicon-based materials have high photoelectric conversion efficiency. This research laid the foundation for the modern solar cell industry. In 1958, the Haffman Power Company of the United States installed the first solar panel on a satellite in the United States, and its photoelectric conversion ef...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/046H01L31/076H01L31/18H01L31/20
CPCY02E10/548Y02P70/50
Inventor 李廷凯李晴风钟真
Owner 湖南共创光伏科技有限公司
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