Transistor forming method

Abstract

Various embodiments provide transistors and methods for forming the same. In an exemplary method, a substrate can be provided. A gate structure can be formed on the substrate. A stress layer can be formed in the substrate on both sides of the gate structure. Barrier ions can be doped in the stress layer to form a barrier layer in the stress layer. The barrier layer can have a preset distance from a surface of the stress layer. An electrical contact layer can be formed using a portion of the stress layer on the barrier layer by a salicide process. The electrical contact layer can contain a first metal element. The first metal element can have a resistivity lower than a resistivity of a silicidation metal. The barrier layer can prevent atoms of the first metal element from diffusing to a bottom of the stress layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a transistor. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. Transistors are currently being widely used as the most basic semiconductor devices, so as the element density and integration of semiconductor devices increase, the gate size of transistors has become shorter than before. However, the shortening of the gate size of the transistor will cause the short-channel effect of the transistor, thereby generating leakage current, and ultimately affecting the electrical performance of the semiconductor device. At present, the prior art mainly improves the performance of semiconductor devices by increasing carrier mobility. When the mobility of carriers is increased, the driving current of the t...

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Problems solved by technology

[0005] However, in prior art transistors with stressed layers, the improvement of carrier mobility in the channel region is limited, and the ability of the transistor to suppress leakage current is limited.

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