Power device electrode and manufacture method thereof
A power device and electrode manufacturing technology, which is applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve problems such as the inability to guarantee the reliability of devices, and achieve the effects of improving device performance and reliability, reducing contact resistance, and good barrier effect
Inactive Publication Date: 2015-07-29
PEKING UNIV FOUNDER GRP CO LTD +1
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Problems solved by technology
[0004] The invention provides a power device electrode and a manufacturing method thereof, which are used to solve the problem that the existing device electrode structure cannot guarantee the reliability of the device in the application scenario of high temperature and high current
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Embodiment Construction
[0018] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. For convenience of description, the sizes of different layers and regions are enlarged or reduced, so the sizes and ratios shown in the drawings do not necessarily represent actual sizes, nor do they reflect the proportional relationship of sizes.
[0019] figure 1 It is a schematic flowchart of a power device electrode manufacturing method provided in Embodiment 1 of the present invention. In order to describe the method in this embodiment clearly and systematically, Figure 2-Figure 4 It is a schematic cross-sectional view of the electrode of the power device during the implementation of Embodiment 1, as figure 1 As shown, the method includes the following st...
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Abstract
The invention provides a power device electrode and a manufacture method thereof. The method comprises the following steps: sequentially forming a first titanium layer, a tungsten titanium alloy layer and a second titanium layer on a silicon wafer; in a mixed gas of nitrogen and hydrogen, carrying out high-temperature annealing processing on the silicon wafer to enable the first titanium layer to form a titanium silicon compound layer arranged between the surface of the silicon wafer and the tungsten titanium alloy layer by reacting with the silicon wafer, and form a titanium nitride layer arranged on the surface of the second titanium layer; and laying a metal interconnection layer on the surface of the titanium nitride layer. According to the power device electrode and the manufacture method thereof, under a high-temperature heavy-current application scene, device performance and reliability of the device can be effectively guaranteed and improved.
Description
technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for manufacturing electrodes of power devices. Background technique [0002] For high-frequency and microwave power devices, due to the high current density and high power conditions, especially the current concentration effect and the heat flow cross-sectional area caused by the uneven distribution of current and heat flow on the junction surface Shrinkage, coupled with the influence of rapid changes in working conditions, makes the thermal stability of high frequency and microwave power devices more prominent. [0003] Specifically, the metallized electrode structure of the device directly affects the thermal stability of the device, and has a huge impact on the performance and reliability of the device. At present, an existing power device electrode is a single-layer pure aluminum electrode. With this electrode structure, the performance of the device can sti...
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IPC IPC(8): H01L29/43H01L29/41H01L21/28
CPCH01L29/401H01L29/41H01L29/43
Inventor 李理马万里赵圣哲
Owner PEKING UNIV FOUNDER GRP CO LTD